간행물
한국재료학회지 KCI 등재 SCOPUS Korean Journal of Materials Research
- 발행기관 한국재료학회
- 자료유형 학술지
- 간기 월간
- ISSN 2799-8525 (Print)2799-8681 (Online)
- 수록기간 1991 ~ 2024
- 주제분류 공학 > 재료공학 공학 분류의 다른 간행물
- 십진분류KDC 530DDC 620
권호리스트/논문검색
제26권 제8호 (2016년 8월) 10건
1.
2016.08
구독 인증기관 무료, 개인회원 유료
The cobalt silicides were investigated for employment as a catalytic layer for a DSSC. Using an E-gun evaporation process, we prepared a sample of 100 nm-thick cobalt on a p-type Si (100) wafer. To form cobalt silicides, the samples were annealed at temperatures of 300 oC, 500 oC, and 700 oC for 30 minutes in a vacuum. Four-point probe, XRD, FE-SEM, and CV analyses were used to determine the sheet resistance, phase, microstructure, and catalytic activity of the cobalt silicides. To confirm the corrosion stability, we also checked the microstructure change of the cobalt silicides after dipping into iodide electrolyte. Through the sheet resistance and XRD results, we determined that Co2Si, CoSi, and CoSi2 were formed successfully by annealing at 300 oC, 500 oC, and 700 oC, respectively. The microstructure analysis results showed that all the cobalt silicides were formed uniformly, and CoSi and CoSi2 layers were very stable even after dipping in the iodide electrolyte. The CV result showed that CoSi and CoSi2 exhibit catalytic activities 67 % and 54 % that of Pt. Our results for Co2Si, CoSi, and CoSi2 revealed that CoSi and CoSi2 could be employed as catalyst for a DSSC.
4,000원
2.
2016.08
구독 인증기관 무료, 개인회원 유료
In order to reuse the photocatalyst and enhance the photolysis efficiency, we have used atmospheric pressure dielectric barrier discharge (APDBD) to clean and activate TiO2 powder. The photocatalytic activity of the TiO2 powder before and after APDBD treatment was evaluated by the degradation of methylene blue (MB) in aqueous solution. The apparent reaction rate constant of photolysis of the first sample of reused TiO2 cleaned by APDBD improved to a level up to 0.32h- 1 higher than the 30 % value of the initial TiO2 powder. As the number of photolysis reactions and APDBD cleanings increased, the apparent rate constants gradually decreased; however, the fourth photolysis reaction still showed a value that was greater than 10% of the initial value. In addition, APDBD treatment enhanced the process by which TiO2 effectively adsorbed MB at every photolysis stage.
4,000원
3.
2016.08
구독 인증기관 무료, 개인회원 유료
The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest E00 value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.
4,000원
4.
2016.08
구독 인증기관 무료, 개인회원 유료
We improve the energy conversion efficiency (ECE) of a dye sensitized solar cell (DSSC) by preparing a working electrode (WE) with localized surface plasmon resonance (LSPR) by inducing Au thin films with thickness of 0.0 to 5.0 nm, deposited via sputtering. Field emission scanning electron microscopy and atomic force microscopy were used to characterize the microstructure of the blocking layer (BL) of the Au thin films. Micro-Raman measurement was employed to confirm the LSPR effect, and a solar simulator and potentiostat were used to evaluate the photovoltaic properties, including the impedance and the I-V of the DSSC of the Au thin films. The results of the microstructural analysis confirmed that nano-sized Au agglomerates were present at certain thicknesses. The photovoltaic results show that the ECE reached a value of 5.34% with a 1-nm thick-Au thin film compared to the value of 5.15 % without the Au thin film. This improvement was a result of the increase in the LSPR of the TiO2 layer that resulted from the Au thin film coating. Our results imply that the ECE of a DSSC may be improved by coating with a proper thickness of Au thin film on the BL.
4,000원
5.
2016.08
구독 인증기관 무료, 개인회원 유료
With the increase in installed solar energy capacity, comparison and analysis of the physical property values of solar cells are becoming increasingly important for production. Therefore, research on determining the physical characteristic values of solar cells is being actively pursued. In this study, a diode equation, which is commonly used to describe the I-V behavior and determine the electrical characteristic values of solar cells, was applied. Using this method, it is possible to determine the diode ideality factor (n) and series resistance (Rs) based on light I-V measurements. Thus, using a commercial screen-printed solar cell and an interdigitated back-contact solar cell, we determined the ideality factor (n) and series resistance (Rs) with a modified diode equation method for the light I-V curves. We also used the sun-shade method to determine the ideality factor (n) and series resistance (Rs) of the samples. The values determined using the two methods were similar. However, given the error in the sun-shade method, the diode equation is considered more useful than the sun-shade method for analyzing the electrical characteristics because it determines the ideality factor (n) and series resistance (Rs) based on the light I-V curves.
4,000원
6.
2016.08
구독 인증기관 무료, 개인회원 유료
A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), (CH3)2Si(OCH3)2, and CxHyOz by plasma enhanced chemical vapor deposition (PECVD) is presented. The multistep process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gapfilling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.
3,000원
7.
2016.08
구독 인증기관 무료, 개인회원 유료
Aluminum oxide (Al2O3) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide (C12H30Al2O2), and water vapor (H2O) as the reactant at deposition temperatures ranging from 150 to 300 oC. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at 250 oC; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical ALD-Al2O3 process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/ cycle. The as-deposited ALD-Al2O3 film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at 1000 oC. The refractive index of the ALD-Al2O3 films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the ALD-Al2O3 films deposited at 250oC were stoichiometric, with no carbon impurity. The step coverage of the ALD-Al2O3 film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the Al/ALD-Al2O3/p-Si structure, the dielectric constant of the ALDAl2O3 films deposited at 250 oC was determined to be ~8.1, with a leakage current density on the order of 10−8 A/cm2 at 1 V.
4,000원
8.
2016.08
구독 인증기관 무료, 개인회원 유료
Film Properties of Al Thin Films Depending on Process Parameters and Film Thickness Grown by Sputter
We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and 100 oC. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.
4,000원
9.
2016.08
구독 인증기관 무료, 개인회원 유료
In this study, the recently developed Al 2013 alloy was T8-tempered and, to improve the strength and corrosionresistance, slight amounts of Zr of 0.2 wt% and 0.5 wt%, respectively, were added and the mechanical properties were analyzed. For microstructure and precipitate analysis, OM observation, XRD analysis, and TEM analysis were performed, and for the mechanical property analysis, hardness and tensile strength tests were done. Also, in order to determine the corrosion rate according to the Zr content, a potentiodynamic polarization test was performed and the properties were compared and analyzed. The size of the precipitate varied with the content of Zr and was finest at Zr content of 0.2 wt%; it grew larger at 0.5 wt%, at which point the hardness value accordingly showed the same trend. On the other hand, as calculated from the aspect of chemical bonding among atoms, it was confirmed that the tensile strength and the corrosion-resistance increased with the same trend.
4,000원
10.
2016.08
구독 인증기관 무료, 개인회원 유료
HA (hydroxyapatite)/β-TCP (tricalcium phosphate) biomaterial (BCP; biphasic calcium phosphate) is widely used as bone cement or scaffolds material due to its superior biocompatibility. Furthermore, NH4HCO3 as a space holder (SH) has been used to evaluate feasibility assessment of porous structured BCP as bone scaffolds. In this study, using a spark plasma sintering (SPS) process at 393K and 1373K under 20MPa load, porous HA/β-TCP biomaterials were successfully fabricated using HA/β-TCP powders with 10~30 wt% SH, TiH2 as a foaming agent, and MgO powder as a binder. The effect of SH content on the pore size and distribution of the BCP biomaterial was observed by scanning electron microscopy (SEM) and a microfocus X-ray computer tomography system (SMX-225CT). The microstructure observations revealed that the volume fraction of the pores increased with increasing SH content and that rough pores were successfully fabricated by adding SH. Accordingly, the cell viabilities of BCP biomaterials were improved with increasing SH content. And, good biological properties were shown after assessment using Hanks balanced salt solution (HBSS).
4,000원
