We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and 100 oC. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.

1. 서 론
 2. 실험 방법
 3. 결 과
 4. 결 론
 References

• 오일권(연세대학교 전기전자공학부) | Il-Kwon Oh
• 윤창모(연세대학교 전기전자공학부) | Chang Mo Yoon
• 장진욱(삼성전자 Test & Package Center) | Jin Wook Jang
• 김형준(연세대학교 전기전자공학부) | Hyungjun Kim Corresponding author