간행물
한국재료학회지 KCI 등재 SCOPUS Korean Journal of Materials Research
- 발행기관 한국재료학회
- 자료유형 학술지
- 간기 월간
- ISSN 2799-8525 (Print)2799-8681 (Online)
- 수록기간 1991 ~ 2024
- 주제분류 공학 > 재료공학 공학 분류의 다른 간행물
- 십진분류KDC 530DDC 620
권호리스트/논문검색
제33권 제11호 (2023년 11월) 8건
1.
2023.11
구독 인증기관 무료, 개인회원 유료
Changes in the microstructure and mechanical properties of as-roll-bonded AA6061/AA5052/AA1050 threelayered sheet with increasing annealing temperature were investigated in detail. The commercial AA6061, AA5052 and AA1050 sheets with 2 mm thickness were roll-bonded by multi-pass rolling at ambient temperature. The roll-bonded Al sheets were then annealed for 1 h at various temperatures from 200 to 400 °C. The specimens annealed up to 250 °C showed a typical deformation structure where the grains are elongated in the rolling direction in all regions. However, after annealing at 300 °C, while AA6061 and AA1050 regions still retained the deformation structure, but AA5052 region changed into complete recrystallization. For all the annealed materials, the fraction of high angle grain boundaries was lower than that of low angle grain boundaries. In addition, while the rolling texture of the {110}<112> and {123}<634> components strongly developed in the AA6061 and AA1050 regions, in the AA5052 region the recrystallization texture of the {100}<001> component developed. After annealing at 350 °C the recrystallization texture developed in all regions. The as-rolled material exhibited a relatively high tensile strength of 282 MPa and elongation of 18 %. However, the tensile strength decreased and the elongation increased gradually with the increase in annealing temperature. The changes in mechanical properties with increasing annealing temperature were compared with those of other three-layered Al sheets fabricated in previous studies.
4,000원
2.
2023.11
구독 인증기관 무료, 개인회원 유료
Xin Ni, Yuan Liang, Quanzi Pan, Hengjie Guo, Kai Chen, Bo Zhang, Shaocong Ni, Bin Sheng, Zeda Meng, Shouqing Liu, Won-Chun Oh
Single-atom Pd clusters anchored on t-BaTiO3 material was synthesized using hydrothermal and ultrasonic methods for the effective piezoelectric catalytic degradation of pollutants using vibration energy. XRD patterns of BaTiO3 loaded with monoatomic Pd were obtained before and after calcining, and showed typical cubic-phase BTO. TEM and HAADF-STEM images indicated single-atom Pd clusters were successfully introduced into the BaTiO3. The piezoelectric current density of the prepared Pd-BaTiO3 binary composite was significantly higher than that of the pristine BaTiO3. Under mechanical vibration, the nanomaterial exhibited a tetracycline decomposition rate of ~95 % within 7 h, which is much higher than the degradation rate of 56.7 % observed with pure BaTiO3. Many of the piezo-induced electrons escaped to the Pd-doped BaTiO3 interface because of Pd’s excellent conductivity. Single-atom Pd clusters help promote the separation of the piezo-induced electrons, thereby achieving synergistic catalysis. This work demonstrates the feasibility of combining ultrasonic technology with the piezoelectric effect and provides a promising strategy for the development of ultrasonic and piezoelectric materials.
4,200원
3.
2023.11
구독 인증기관 무료, 개인회원 유료
In order to develop catechin patches for skin regeneration at wound sites, patches with varying concentrations of catechin and chitosan were manufactured. An optimal composition ratio was determined by adjusting the drug release rate and amount, to maximize efficiency. The catechin used in this study was extracted from green tea leaves using a solvent/ultrasonication method, and its characteristics were confirmed through Fourier transform-infrared spectroscopy (FT-IR) and high-performance liquid chromatography (HPLC) analyses. Patches were prepared with different concentrations of catechin and chitosan, and various properties were analyzed using techniques such as FT-IR, water contact angle analysis, and UV-Vis spectroscopy. It was observed that as the chitosan concentration increased, the release of catechin slowed down or almost ceased. A patch manufactured with 1.5 mg/cm2 of catechin at a 1 % chitosan concentration exhibited a high initial release rate over 24 h and demonstrated cellular biocompatibility. Consequently, these patches, with tailored release characteristics based on the concentrations of chitosan and catechin, hold promise for use as drug delivery systems in wound healing applications.
4,000원
4.
2023.11
구독 인증기관 무료, 개인회원 유료
The effects of La3+ substitution for Sr2+-site on the crystal structure and the dielectric properties of (Ba0.7Sr0.3-3x/2Lax) (Ti0.9Zr0.1)O3 (BSLTZ) (0.005 ≤ x ≤ 0.02) ceramics were investigated. The structural characteristics of the BSLTZ ceramics were quantitatively evaluated using the Rietveld refinement method from X-ray diffraction (XRD) data. For the specimens sintered at 1,550 °C for 6 h, a single phase with a perovskite structure and homogeneous microstructure were observed for the entire range of compositions. With increasing La3+ substitution (x), the unit cell volume decreased because the ionic size of La3+ (1.36 Å) ions is smaller than that of Sr2+ (1.44 Å) ions. With increasing La3+ substitution (x), the tetragonal phase fraction increased due to the A-site cation size mismatch effect. Dielectric constant (εr) increased with the La3+ substitution (x) due to the increase in tetragonality (c/a) and the average B-site bond valence of the ABO3 perovskite. The BSLTZ ceramics showed a higher dielectric loss due to the smaller grain size than that of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 ceramics. BSLTZ (x = 0.02) ceramics met the X7R specification proposed by the Electronic Industries Association (EIA).
4,000원
5.
2023.11
구독 인증기관 무료, 개인회원 유료
Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO2 applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 °C. PSC using ALD SnO2 as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO2 showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO2 layer was 0.75 mA/cm2 higher than that of the spin coated SnO2. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO2. Therefore ALD SnO2 is a candidate as a ETL for use in PSC vacuum deposition.
4,000원
6.
2023.11
구독 인증기관 무료, 개인회원 유료
The purpose of this study was to analyze microstructural changes and evaluate the mechanical properties of TWIP steel subjected to variations in heat treatment, in order to identify optimal process conditions for enhancing the performance of TWIP steel. For this purpose, a homogenization heat treatment was conducted at 1,200 °C for 2 h, followed by hot rolling at temperature exceeding 1,100 °C and cold rolling. Annealing heat treatment is achieved using a muffle furnace in the range of 600 °C to 1,000 °C. The microstructure characterization was performed with an optical microscope and X-ray diffraction. Mechanical properties are evaluated using micro Vickers hardness, tensile test, and ECO index (UTS × Elongation). The specimens annealed at 900 °C and 1,000 °C experienced a significant decrease in hardness and strength due to decarburization. Consequently, the decarburization phenomenon is closely related to the heat treatment process and mechanical properties of TWIP steel, and the effect of the microstructure change during annealing heat treatment.
4,000원
7.
2023.11
구독 인증기관 무료, 개인회원 유료
As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 °C The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.
4,000원
8.
2023.11
구독 인증기관 무료, 개인회원 유료
ZnO/Cu/ZnO (ZCZ) thin films were deposited at room temperature on a glass substrate using direct current (DC) and radio frequency (RF, 13.56 MHz) magnetron sputtering and then the effect of post-deposition electron irradiation on the structural, optical, electrical and transparent heater properties of the films were considered. ZCZ films that were electron beam irradiated at 500 eV showed an increase in the grain sizes of their ZnO(102) and (201) planes to 15.17 nm and 11.51 nm, respectively, from grain sizes of 13.50 nm and 10.60 nm observed in the as deposited films. In addition, the film’s optical and electrical properties also depended on the electron irradiation energies. The highest opto-electrical performance was observed in films electron irradiated at 500 eV. In a heat radiation test, when a bias voltage of 18 V was applied to the film that had been electron irradiated at 500 eV, its steady state temperature was about 90.5 °C. In a repetition test, it reached the steady state temperature within 60 s at all bias voltages.
4,000원
