간행물
한국재료학회지 KCI 등재 SCOPUS Korean Journal of Materials Research
- 발행기관 한국재료학회
- 자료유형 학술지
- 간기 월간
- ISSN 2799-8525 (Print)2799-8681 (Online)
- 수록기간 1991 ~ 2024
- 주제분류 공학 > 재료공학 공학 분류의 다른 간행물
- 십진분류KDC 530DDC 620
권호리스트/논문검색
제29권 제9호 (2019년 9월) 8건
1.
2019.09
구독 인증기관 무료, 개인회원 유료
Spherical Li3V2(PO4)3 (LVP) and carbon-coated LVP with a monoclinic phase for the cathode materials are synthesized by a hydrothermal method using N2H4 as the reducing agent and saccharose as the carbon source. The results show that single phase monoclinic LVP without impurity phases such as LiV(P2O7), Li(VO)(PO4) and Li3(PO4) can be obtained after calcination at 800 oC for 4 h. SEM and TEM images show that the particle sizes are 0.5~2 μm and the thickness of the amorphous carbon layer is approximately 3~4 nm. CV curves for the test cell are recorded in the potential ranges of 3.0~4.3 V and 3.0~4.8 V at a scan rate of 0.01 mV s–1 and at room temperature. At potentials between 3.0 and 4.8 V, the third Li+ ions from the carbon-coated LVP can be completely extracted, at voltages close to 4.51 V. The carbon-coated LVP exhibits an initial specific discharge capacity of 118 mAh g–1 in the voltage region of 3.0 to 4.3 V at a current rate of 0.2 C. The results indicate that the reducing agent and carbon source can affect the crystal structure and electrochemical properties of the cathode materials.
4,000원
2.
2019.09
구독 인증기관 무료, 개인회원 유료
The widespread use of automobiles has greatly increased energy demand and exhaust gas pollution. In order to save energy, reduce emissions and protect the environment, making lightweights automobiles is an effective measure. In this paper, carbon fiber composites and automobile B-pillars are briefly introduced, and then the mechanical properties and impact resistance of the DC590 steel B-pillars and carbon fiber composites B-pillars are simulated by the ABAQUS finite element software. The results show that the quality of compound B-pillars is reduced by 50.76 % under the same dimensions, and the mechanical property of unit mass is significantly better than that of metal B-pillars. In the course of a collision, the kinetic energy of the two B-pillars is converted into internal energy, but the total energy remains the same; the converted internal energy of the composite B-pillars is greater, the deformation is smaller and the maximum intrusion and intrusion speed is also smaller, indicating that the anti-collision performance of the composite B-pillars is excellent. In summary, the carbon fiber composites can not only reduce the quality of the B-pillars, but also improve their anti-collision performance..
4,000원
3.
2019.09
구독 인증기관 무료, 개인회원 유료
Information and communication technologies are developing rapidly as IC chip size becomes smaller and information processing becomes faster. With this development, digital circuit technology is being widely applied to mobile phones, wireless LANs, mobile terminals, and digital communications, in which high frequency range of GHz is used. In highdensity electronic circuits, issues of noise and EMC(Electro-Magnetic Compatibility) arising from cross talk between interconnects or devices should be solved. In this study, sheet-type electromagnetic wave absorbers that cause electromagnetic wave attenuation are fabricated using composites based on soft magnetic metal powder and silicon rubber to solve the problem of electromagnetic waves generated in wireless communication products operating at the frequency range of 2.4 GHz. Sendust(Fe-Si-Al) and carbonyl iron(Fe-C) were used as soft magnetic metals, and their concentrations and sheet thicknesses were varied. Using soft magnetic metal powder, a sheet is fabricated to exhibit maximum electromagnetic attenuation in the target frequency band, and a value of 34.2dB(99.9 % absorption) is achieved at the target frequency.
4,000원
4.
2019.09
구독 인증기관 무료, 개인회원 유료
We investigate the characteristics of self-assembled quantum dot infrared photodetectors(QDIPs) based on doping level. Two kinds of QDIP samples are prepared using molecular beam epitaxy : n+-i(QD)-n+ QDIP with undoped quantum dot(QD) active region and n+-n−(QD)-n+ QDIP containing Si direct doped QDs. InAs QDIPs were grown on semi-insulating GaAs (100) wafers by molecular-beam epitaxy. Both top and bottom contact GaAs layer are Si doped at 2×1018/cm3. The QD layers are grown by two-monolayer of InAs deposition and capped by InGaAs layer. For the n+-n−(QD)-n+ structure, Si dopant is directly doped in InAs QD at 2×1017/cm3. Undoped and doped QDIPs show a photoresponse peak at about 8.3 μm, ranging from 6~10 μm at 10 K. The intensity of the doped QDIP photoresponse is higher than that of the undoped QDIP on same temperature. Undoped QDIP yields a photoresponse of up to 50 K, whereas doped QDIP has a response of up to 30 K only. This result suggests that the doping level of QDs should be appropriately determined by compromising between photoresponsivity and operating temperature.
4,000원
5.
2019.09
구독 인증기관 무료, 개인회원 유료
In the present study, the thermal conductivity of a silicon nitride(Si3N4) thin-film is evaluated using the dualwavelength pump-probe technique. A 100-nm thick Si3N4 film is deposited on a silicon (100) wafer using the radio frequency plasma enhanced chemical vapor deposition technique and film structural characteristics are observed using the X-ray reflectivity technique. The film’s thermal conductivity is measured using a pump-probe setup powered by a femtosecond laser system of which pump-beam wavelength is frequency-doubled using a beta barium borate crystal. A multilayer transient heat conduction equation is numerically solved to quantify the film property. A finite difference method based on the Crank-Nicolson scheme is employed for the computation so that the experimental data can be curve-fitted. Results show that the thermal conductivity value of the film is lower than that of its bulk status by an order of magnitude. This investigation offers an effective way to evaluate thermophysical properties of nanoscale ceramic and dielectric materials with high temporal and spatial resolutions.
4,000원
6.
2019.09
구독 인증기관 무료, 개인회원 유료
Cu2ZnSn(S,Se)4(CZTSSe) thin film solar cells areone of the most promising candidates for photovoltaic devices due to their earth-abundant composition, high absorption coefficient and appropriate band gap. The sputtering process is the main challenge to achieving high efficiency of CZTSSe solar cells for industrialization. In this study, we fabricated CZTSSe absorbers on Mo coated soda lime glass using different pressures during the annealing process. As an environmental strategy, the annealing process is performed with S and Se powder, without any toxic H2Se and/or H2S gases. Because CZTSSe thin films have a very narrow stable phase region, it is important to control the condition of the annealing process to achieve high efficiency of the solar cell. To identify the effect of process pressure during the sulfo-selenization, we experiment with varying initial pressure from 600 Torr to 800 Torr. We fabricate a CZTSSe thin film solar cell with 8.24 % efficiency, with 435 mV for open circuit voltage(VOC) and 36.98 mA/cm2 for short circuit current density(JSC), under a highest process pressure of 800 Torr.
4,000원
7.
2019.09
구독 인증기관 무료, 개인회원 유료
Lu(Nb,Ta)O4:Eu3+ powders are synthesized by a solid-state reaction process using LiCl and Li2SO4 fluxes. The photoluminescence (PL) excitation spectra of the synthesized powders consist of broad bands at approximately 270 nm and sharp peaks in the near ultraviolet region, which are assigned to the Nb5+-O2− charge transfer of [NbO4]3− niobates and the f-f transition of Eu3+, respectively. The PL emission spectra exhibit red peaks assigned to the 5D0 → 7FJ transitions of Eu3+. The strongest peak is obtained at 614 nm (5D0 → 7F2), indicating that the Eu3+ ions are incorporated into the Lu3+ asymmetric sites. The addition of fluxes causes the increase in emission intensity, and Li2SO4 flux is more effective for enhancement in emission intensity than is LiCl flux. The substitution of Ta5+ for Nb5+ results in an increase or decrease in the emission intensity of LuNb1-xTaxO4:Eu3+ powders, depending on amount and kind of flux. The findings are explained using particle morphology, modification of the [NbO4]3− structure, formation of substructure of LuTaO4, and change in the crystal field surrounding the Eu3+ ions.
4,000원
8.
2019.09
구독 인증기관 무료, 개인회원 유료
Aluminum nitride (AlN) has versatile and intriguing properties, such as wide direct bandgap, high thermal conductivity, good thermal and chemical stability, and various functionalities. Due to these properties, AlN thin films have been applied in various fields. However, AlN thin films are usually deposited by high temperature processes like chemical vapor deposition. To further enlarge the application of AlN films, atomic layer deposition (ALD) has been studied as a method of AlN thin film deposition at low temperature. In this mini review paper, we summarize the results of recent studies on AlN film grown by thermal and plasma enhanced ALD in terms of processing temperature, precursor type, reactant gas, and plasma source. Thermal ALD can grow AlN thin films at a wafer temperature of 150~550 oC with alkyl/amine or chloride precursors. Due to the low reactivity with NH3 reactant gas, relatively high growth temperature and narrow window are reported. On the other hand, PEALD has an advantage of low temperature process, while crystallinity and defect level in the film are dependent on the plasma source. Lastly, we also introduce examples of application of ALD-grown AlN films in electronics.
4,200원
