We investigate the characteristics of self-assembled quantum dot infrared photodetectors(QDIPs) based on doping level. Two kinds of QDIP samples are prepared using molecular beam epitaxy : n+-i(QD)-n+ QDIP with undoped quantum dot(QD) active region and n+-n−(QD)-n+ QDIP containing Si direct doped QDs. InAs QDIPs were grown on semi-insulating GaAs (100) wafers by molecular-beam epitaxy. Both top and bottom contact GaAs layer are Si doped at 2×1018/cm3. The QD layers are grown by two-monolayer of InAs deposition and capped by InGaAs layer. For the n+-n−(QD)-n+ structure, Si dopant is directly doped in InAs QD at 2×1017/cm3. Undoped and doped QDIPs show a photoresponse peak at about 8.3 μm, ranging from 6~10 μm at 10 K. The intensity of the doped QDIP photoresponse is higher than that of the undoped QDIP on same temperature. Undoped QDIP yields a photoresponse of up to 50 K, whereas doped QDIP has a response of up to 30 K only. This result suggests that the doping level of QDs should be appropriately determined by compromising between photoresponsivity and operating temperature.

Abstracts
1.서 론
2. 실험 방법
3. 결과 및 고찰
4.결 론
References

• 서동범(충남대학교 공과대학 신소재공학과) | Dong-Bum Seo (Department of Materials Science & Engineering, Chungnam National University)
• 황제환(한국표준과학연구원 융합물성측정센터) | Je-hwan Hwang (Division of Convergence Technology, Korea Research Institute of Standard Science)
• 오보람(한국표준과학연구원 융합물성측정센터) | Boram Oh (Division of Convergence Technology, Korea Research Institute of Standard Science)
• 김준오(한국표준과학연구원 융합물성측정센터) | Jun Oh Kim (Division of Convergence Technology, Korea Research Institute of Standard Science)
• 이상준(한국표준과학연구원 융합물성측정센터) | Sang Jun Lee (Division of Convergence Technology, Korea Research Institute of Standard Science)
• 김의태(충남대학교 공과대학 신소재공학과) | Eui-Tae Kim (Department of Materials Science & Engineering, Chungnam National University) Corresponding author