간행물
한국재료학회지 KCI 등재 SCOPUS Korean Journal of Materials Research
- 발행기관 한국재료학회
- 자료유형 학술지
- 간기 월간
- ISSN 2799-8525 (Print)2799-8681 (Online)
- 수록기간 1991 ~ 2024
- 주제분류 공학 > 재료공학 공학 분류의 다른 간행물
- 십진분류KDC 530DDC 620
권호리스트/논문검색
제19권 제2호 (2009년 2월) 12건
1.
2009.02
구독 인증기관 무료, 개인회원 유료
In this study, Ti powder was fabricated from Ti scrap by a hydrogenation-dehydrogenation (HDH)method. The Ti powders were compacted by Spark plasma sintering (SPS) and the microstructure andmechanical properties of the powders were investigated. A hydrogenation reaction of Ti scrap occurred attemperatures near 450oC with a sudden increase in the reaction temperature and a decrease in the pressureof the hydrogen gas as measured in a furnace during the hydrogenation process. In addition, a dehydrogenationprocess was carried out at 750oC for 2hrs in a vacuum of 10-4torr. The Ti powder sizes obtained byhydrogenation-dehydrogenation and mechanical milling processes were in the range of 1~90µm and 1~100µm,respectively. To fabricate Ti compacts, Ti powders were sintered under an applied uniaxial punch pressure of40 MPa at in a range of 900~1200oC for 5 min. The relative density of a SPSed compact was 99.6% at 1100oC,and the tensile strength decreased with an increase in the sintering temperature. However, the hardnessincreased as the sintering temperature increased.
4,000원
2.
2009.02
구독 인증기관 무료, 개인회원 유료
Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a CoSO4 concentration of 0.082 mol/l, a solution pH of 9, a KReO4 concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at 80˚C. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to 550˚C and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of 400˚C for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.
4,000원
3.
2009.02
구독 인증기관 무료, 개인회원 유료
This study investigated dry etching of acrylic in capacitively coupled SF6, SF6/O2 and SF6/CH4 plasma under a low vacuum pressure. The process pressure was 100 mTorr and the total gas flow rate was fixed at 10 sccm. The process variables were the RIE chuck power and the plasma gas composition. The RIE chuck power varied in the range of 25~150 W. SF6/O2 plasma produced higher etch rates of acrylic than pure SF6 and O2 at a fixed total flow rate. 5 sccm SF6/5 sccm O2 provided 0.11μm/min and 1.16μm/min at 25W and 150W RIE of chuck power, respectively. The results were nearly 2.9 times higher compared to those at pure SF6 plasma etching. Additionally, mixed plasma of SF6/CH4 reduced the etch rate of acrylic. 5 sccm SF6/5 sccm CH4 plasma resulted in 0.02μm/min and 0.07μm/min at 25W and 150W RIE of chuck power. The etch selectivity of acrylic to photoresist was higher in SF6/O2 plasma than in pure SF6 or SF6/CH4 plasma. The maximum RMS roughness (7.6 nm) of an etched acrylic surface was found to be 50% O2 in SF6/O2 plasma. Besides the process regime, the RMS roughness of acrylic was approximately 3~4 nm at different percentages of O2 with a chuck power of 100W RIE in SF6/O2 plasma etching.
4,000원
4.
2009.02
구독 인증기관 무료, 개인회원 유료
This study investigated the dependence of the various sputtering conditions (Ar pressure: 2~10 mTorr, Power: 50~150 W) and thickness (50~1200 nm) of Si thin film on the electrochemical properties, microstructural properties and the capacity fading of a Si thin film anode. A Si layer and a Ti buffer layer were deposited on Copper foil by RF-magnetron sputtering. At 10 mTorr, the 50 W sample showed the best capacity of 3323 mAh/g, while the 100 W sample showed the best capacity retention of 91.7%, also at 10 mTorr. The initial capacities and capacity retention in the samples apart from the 50W sample at 10 mTorr were enhanced as the Ar pressure and power increased. This was considered to be related to the change of the microstructure and the surface morphology by various sputtering conditions. In addition, thinner Si film anodes showed better cycling performance. This phenomenon is caused by the structural stress and peeling off of the Si layer by the high volume change of Si during the charge/discharge process.
4,000원
5.
2009.02
구독 인증기관 무료, 개인회원 유료
A series of experiments demonstrated that an addition of Ag into (Cu0.5Zr0.5)100-xAgx amorphous alloys alters the plasticity of the alloys in a systematic manner. Energy dispersive x-ray spectroscopy (EDS) conducted on the (Cu0.5Zr0.5)100-xAgx alloys exhibited the presence of compositional modulation, indicating that compositional separation had occurred. The presence of compositional modulation was also validated using a combined technique of molecular dynamics and Monte Carlo simulation. In this study, the effect of Ag on the compositional separation in (Cu0.5Zr0.5)100-xAgx bulk amorphous alloys was investigated to understand the role played by the phase-separating element on the plasticity of the amorphous alloys.
4,000원
6.
2009.02
구독 인증기관 무료, 개인회원 유료
Nano-crystalline hydroxyapatite (HAp) films were formed at the Ti surface by a single-step microarc oxidation (MAO), and HAp-zirconia composite (HZC) films were obtained by subsequent chemical vapor deposition (CVD) of zirconia onto the HAp. Through the CVD process, zero- and one-dimensional zirconia nanostructures having tetragonal crystallinity (t-ZrO2) were uniformly distributed and well incorporated into the HAp crystal matrix to form nanoscale composites. In particular, (t-ZrO2) was synthesized at a very low temperature. The HZC films did not show secondary phases such as tricalcium phosphate (TCP) and tetracalcium phosphate (TTCP) at relatively high temperatures. The most likely mechanism for the formation of the t-ZrO2 and the pure HAp at the low processing temperature was proposed to be the diffusion of Ca2+ ions. The HZC films showed increasing micro-Vickers hardness values with increases in the t-ZrO2 content. The morphological features and phase compositions of the HZC films showed strong dependence on the time and temperature of the CVD process. Furthermore, they showed enhanced cell proliferation compared to the TiO2 and HAp films most likely due to the surface structure change.
4,000원
7.
2009.02
구독 인증기관 무료, 개인회원 유료
The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the CH4 concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/SiO2/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with SiH4, CO2 and CH4 gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the CH4 concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-(CH3)2, Si-CH3 and CHx in the absorbance mode over the range from 650 to 4000 cm-1. The results showed that dielectric properties with different CH4 concentrations are closely related to the (Si-CH3)/[(Si-CH3)+(Si-O)] ratio.
4,000원
8.
2009.02
구독 인증기관 무료, 개인회원 유료
Glass ceramics were made from coal bottom ash by adding CaO and Li2O as glass modifiers and TiO2 as a nucleating agent in a process of melting and quenching followed by a thermal treatment. The surface of the glass ceramics has 1.6 times more Li2O compared to the inner matrix. When TiO2 was not added or when only 2 wt% was added, the surface parts of the glass ceramics were crystalline with a thickness close to 130μm. In addition, the matrixes showed only the glass phase and not the crystalline phase. However, doping of TiO2 from 4 wt% to 10 wt% began to create small crystalline phases in the matrix with an increase in the quantity of the crystalline. The matrix microstructure of glass ceramics containing TiO2 in excess of 8 wt% was a mixture of dark-gray crystalline and white crystalline parts. These two parts had no considerable difference in terms of composition. It was thought that the crystallization mechanism affects the crystal growth, direction and shape and rather than the existence of two types of crystals.
4,000원
9.
2009.02
구독 인증기관 무료, 개인회원 유료
The effect of annealing under argon atmosphere on hydrogenated amorphous silicon (a-Si:H) thin films deposited at room temperature and 300˚C using Radio Frequency (RF) magnetron sputtering has been investigated. For the films deposited at room temperature, there was not any increase in hydrogen content and optical band gap of the films, and as a result, quality of the films was not improved under any annealing conditions. For the films deposited at 300˚C, on the other hand, significant increases in hydrogen content and optical band gap were observed, whereas values of microstructure parameter and dark conductivity were decreased upon annealing below 300˚C. In this study, it was proposed that the Si-HX bonding strength is closely related to deposition temperature. Also, the improvement in optical, electrical and structural properties of the films deposited at 300˚C was originated from thermally activated hydrogen bubbles, which were initially trapped at microvoids in the films.
4,000원
10.
2009.02
구독 인증기관 무료, 개인회원 유료
Transparent Sn-doped In2O3 (ITO) single-layer and ITO/Au/ITO multilayer films were deposited onglass substrates by reactive magnetron sputtering to compare the properties of the films. They were thenannealed in a vacuum of 1×10-2 Pa at temperatures ranging from 150 to 450oC for 20 min to determinethe effect of the annealing temperature on the properties of the films. As-deposited 100nm thick ITO filmsexhibit a sheet resistance of 130Ω/□ and optical transmittance of 77% at a wavelength length of 550nm. Byinserting a 5nm-thick Au layer in ITO/metal/ITO (IMI) films, the sheet resistance was decreased to as lowas 20Ω/□ and the optical transmittance was decreased to as little as 73% at 550nm. Post-deposition annealingof ITO/Au/ITO films led to considerably lower electrical resistivity and higher optical transparency. In the X-ray diffraction pattern, as-deposited ITO films did not show any diffraction peak, whereas as-deposited ITO/Au/ITO films have Au (222) and In2O3 (110) crystal planes. When the annealing temperature reached the 150- 450oC range, the both diffraction peak intensities increased significantly. A sheet resistance of 8Ω/□ and anoptical transmittance of 82% were obtained from the ITO/Au/ITO films annealed at 450oC.
3,000원
11.
2009.02
구독 인증기관 무료, 개인회원 유료
For the fabrication of core-shell structure bimetallic lead-free solder balls, both the critical temperature (Tcr) for the phase separation of two immiscible liquid phases and the temperature coefficient of the interfacial tension between the two separated liquid phases are required. In order to obtain this information, the temperature dependence of the surface tension of 60%Bi-24%Cu-16%Sn(-REM) alloys was measured using the constrained drop method. The slope of the temperature dependence of the surface tension changed clearly at a critical temperature for the separation of two immiscible liquid phases. The critical temperature of the 60%Bi-24%Cu-16%Sn alloy was estimated to be 1097K. An addition of 0.05% Ce decreased the critical temperature to 1085K, whereas that of 0.05% La increased it to 1117K. It was found that the surface tension and its temperature coefficient of the 60%Bi-24%Cu-16%Sn alloy were slightly increased by the addition of 0.05% Ce and 0.05% La. In addition, additions of Ce and La increased the temperature coefficient of the interfacial tension.
3,000원
12.
2009.02
구독 인증기관 무료, 개인회원 유료
The use of dolomite refractories has increased during the past several years in the manufacturing of clean steel during the stainless steelmaking process. However, at the same time, the use of dolomite refractories has led to what is known as the skull formation. In the present work, to understand the skull formation, the wetting characteristics of dolomite substrates by liquid Fe-19wt%Cr-10wt%Ni alloys in various oxygen partial pressures were initially investigated at 1753K using the sessile drop technique. For comparison, the wetting characteristics of alumina substrates were investigated with the same technique. It was found that the wetting index, (1+cosθ), of dolomite is approximately 40% higher compared to those of alumina. In addition, the oxygen partial pressure to generate the surface oxide, which may capture the liquid metal on the refractory surface, for dolomite is much lower than that for alumina. From this study, it was concluded that the use of dolomite is much more closely associated with the skull formation compared to the use of alumina due to the stronger wettability and the surface oxide formation at a lower oxygen partial pressure of dolomite.
3,000원
