4 mol% Yttria-stabilized zirconia (4YSZ) coatings with 200 μm thick are fabricated by Electron Beam Physical Vapor Deposition (EB-PVD) for thermal barrier coating (TBC). 150 μm of NiCrAlY based bond coat is prepared by conventional APS (Air Plasma Spray) method on the NiCrCoAl alloy substrate before deposition of top coating. 4 mol% YSZ top coating shows typical tetragonal phase and columnar structure due to vapor phase deposition process. The adhesion strength of coating is measured about 40 MPa. There is no delamination or cracking of coatings after thermal cyclic fatigue and shock test at 850oC.

Yttria-stabilized zirconia (YSZ) coatings are fabricated via suspension plasma spray (SPS) for thermal barrier applications. Three different suspension sets are prepared by using a planetary mill as well as ball mill in order to examine the effect of starting suspension on the phase evolution and the microstructure of SPS prepared coatings. In the case of planetary-milled commercial YSZ powder, a deposited thick coating turns out to have a dense, vertically-cracked microstructure. In addition, a dense YSZ coating with fully developed phase can be obtained via suspension plasma spray with suspension from planetary-milled mixture of Y2O3 and ZrO2.

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the CH4 concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/SiO2/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with SiH4, CO2 and CH4 gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the CH4 concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-(CH3)2, Si-CH3 and CHx in the absorbance mode over the range from 650 to 4000 cm-1. The results showed that dielectric properties with different CH4 concentrations are closely related to the (Si-CH3)/[(Si-CH3)+(Si-O)] ratio.

Ni기 초합금인 B1914로 다결정, 방향성 및 단결정을 제조하여, 상온과 고온에서 이들 결정종류에 따른 변형을 관찰하였다. 이들 결정을 제작하기 위하여 진공 주조로에서 냉각속도와 온도구배를 제어하였으며, 제작된 봉상 시편들은 2단계의 진공열처리를 하고 아르곤가스로 급냉하였다. 동일한 모합금인 B1914로 제조된 결정들은 결정종류에 따라서 뚜렷한 변형(stress-strain)을 나타내었다. 즉, 항복강도와 인장강도는 다결정, 방향성 및 단결정 순으로 뚜렷이 증가하였다. 또한 600˚C에서 모든 결정들은 γ'의 강화효과로 인해서 가장 높은 741-816MPa의 항복강도를 나타내었으며, 인장강도는 1005-1139MPa이었다.