Transparent Sn-doped In2O3 (ITO) single-layer and ITO/Au/ITO multilayer films were deposited onglass substrates by reactive magnetron sputtering to compare the properties of the films. They were thenannealed in a vacuum of 1×10-2 Pa at temperatures ranging from 150 to 450oC for 20 min to determinethe effect of the annealing temperature on the properties of the films. As-deposited 100nm thick ITO filmsexhibit a sheet resistance of 130Ω/□ and optical transmittance of 77% at a wavelength length of 550nm. Byinserting a 5nm-thick Au layer in ITO/metal/ITO (IMI) films, the sheet resistance was decreased to as lowas 20Ω/□ and the optical transmittance was decreased to as little as 73% at 550nm. Post-deposition annealingof ITO/Au/ITO films led to considerably lower electrical resistivity and higher optical transparency. In the X-ray diffraction pattern, as-deposited ITO films did not show any diffraction peak, whereas as-deposited ITO/Au/ITO films have Au (222) and In2O3 (110) crystal planes. When the annealing temperature reached the 150- 450oC range, the both diffraction peak intensities increased significantly. A sheet resistance of 8Ω/□ and anoptical transmittance of 82% were obtained from the ITO/Au/ITO films annealed at 450oC.

• Kim, Dae-Il | Kim, Dae-Il
• Chae, Joo-Hyun