Although most strains of escherichia coli (E. coli) are harmless, some serotypes can cause serious food poisoning in humans. It is very difficult to eliminate E. coli from our lives. Here we show that E. coli can be eliminated by hydroxyapatite (HAp). Because HAp has a positive charge, the material and E. coli are attracted through electrostatic interactions. Additionally, because the surface of HAp is porous, it enters the pores of the HAp surface removing them from the environment. The amount of adsorption was observed to increase over time, and the zeta potential value of the material tended to be similar to that of E. coli. This phenomenon is thought to have zeta potential similar to that of E. coli as it is adsorbed onto the HAp surface over time. E. coli stained with crystal violet was spread on a glass slide and HAp porous sol powder was dropped to remove the E. coli. We expect that this analysis will open a new direction for antibacterial materials.
In this study, four different samples of Se60Ge40-xBix chalcogenides glasses were synthesized by heating the melt for 18 h in vacuum Pyrex ampoules (under a 10-4 Torre vacuum), each with a different concentration (x = 0, 10, 15, and 20) of high purity starting materials. The results of direct current (DC) electrical conductivity measurements against a 1,000/T plot for all chalcogenide samples revealed two linear areas at medium and high temperatures, each with a different slope and with different activation energies (E1 and E2). In other words, these samples contain two electrical conduction mechanisms: a localized conduction at middle temperatures and extended conduction at high temperatures. The results showed the local and extended state parameters changed due to the effective partial substitution of germanium by bismuth. The density of extended states N(Eext) and localized states N(Eloc) as a function of bismuth concentration was used to gauge this effect. While the density of the localized states decreased from 1.6 × 1014 to 4.2 × 1012 (ev-1 cm-3) as the bismuth concentration increased from 0 to 15, the density of the extended states generally increased from 3.552 × 1021 to 5.86 × 1021 (ev-1 cm-3), indicating a reduction in the mullet’s randomness. This makes these alloys more widely useful in electronic applications due to the decrease in the cost of manufacturing.
In this work, we investigated the photo-degradation performance of MnO2-SiC fiber-TiO2 (MnO2-SiC-TiO2) ternary nanocomposite according to visible light excitation utilizing methylene blue (MB) and methyl orange (MO) as standard dyes. The photocatalytic physicochemical characteristics of this ternary nanocomposite were described by X-ray diffraction (XRD), scanning electron microscopy (SEM), tunneling electron microscopy (TEM), ultraviolet-visible (UV-vis), diffuse reflectance spectroscopy (DRS), electrochemical impedance spectroscopy (EIS), photocurrent and cyclic voltammogram (CV) test. Photolysis studies of the synthesized MnO2-SiC-TiO2 composite were conducted using standard dyes of MB and MO under UV light irradiation. The experiments revealed that the MnO2-SiC-TiO2 exhibits the greatest photocatalytic dye degradation performance of around 20 % with MB, and of around 10 % with MO, respectively, within 120 min. Furthermore, MnO2-SiC-TiO2 showed good stability against photocatalytic degradation. The photocatalytic efficiency of the nanocomposite was indicated by the adequate photocatalytic reaction process. These research results show the practical application potential of SiC fibers and the performance of a photocatalyst composite that combines these fibers with metal oxides.
The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO2 has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO2 on RuO2 with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO2 was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 °C, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10-6 A/cm2 at 1 V, and an EOT at the 0.5 nm level was achieved.
In this paper, iron ore tailings (IOT) were separated from the tailings field and used to prepare cement stabilized macadam (CSM) with porous basalt aggregate. First, the basic properties of the raw materials were studied. Porous basalt was replaced by IOT at ratios of 0, 20 %, 40 %, 60 %, 80 %, and 100 % as fine aggregate to prepare CSM, and the effects of different cement dosage (4 %, 5 %, 6 %) on CSM performance were also investigated. CSM’s durability and mechanical performance with ages of 7 d, 28 d, and 90 d were studied with the unconfined compression strength test, splitting tensile strength test, compressive modulus test and freeze-thaw test, respectively. The changes in Ca2+ content in CSM of different ages and different IOT ratios were analyzed by the ethylene diamine tetraacetic acid (EDTA) titration method, and the micro-morphology of CSM with different ages and different IOT replaced ratio were observed by scanning electron microscopy (SEM). It was found that with the same cement dosage, the strengths of the IOT-replaced CSM were weaker than that of the porous basalt aggregate at early stage, and the strength was highest at the replaced ratio of 60 %. With a cement dosage of 4 %, the unconfined compressive strength of CSM without IOT was increased by 6.78 % at ages from 28 d to 90 d, while the splitting tensile strength increased by 7.89 %. However, once the IOT replaced ratio reached 100 %, the values increased by about 76.24 % and 17.78 %, which was better than 0 % IOT. The CSM-IOT performed better than the porous basalt CSM at 90 d age. This means IOT can replace porous basalt fine aggregate as a pavement base.
The semiconductor and display industries require the development of plasma resistant materials for use in high density plasma etching process equipment. Yttria (Y2O3) is a ceramic material mainly used to ensure good plasma resistance properties, which requires a dense microstructure. In commercial production, a sintering process is applied to reduce the sintering temperature of Y2O3. In this study, the effect of the addition of glass frit to the sintered specimen was examined when manufacturing yttria sintered specimens for semiconductor process equipment parts. The Y2O3 specimen was shaped into a Ø50 mm size and then sintered at 1,600 °C for 1~8 h. The characteristics, X-ray diffraction pattern, densities, contraction rate of the specimen, and swelling of the surface of the Y2O3 specimens were investigated as a function of the sintering time and glass frit addition. The Y2O3 specimen exhibited a density of over 4.9 g/cm3 as the sintering time increased, and the swelling phenomenon characteristics were improved by glass frit, by controlling particle size.
The structure and magnetic properties of composite powders prepared by ball milling a mixture of Fe2O3 ‧ (0.4-1.0)Fe were investigated. Hysteresis loops and differential scanning calorimetry (DSC) curves are used to characterize the materials and to examine the effect of the solid state reaction induced by ball milling. The results showed that a solid state reaction in Fe2O3 ‧ (0.4-1.0)Fe clearly proceeds after only 1 h of ball milling. The system is characterized by a positive reaction heat of +2.23 kcal/mole. The diffraction lines related to Fe2O3 and Fe disappeared after 1 h of ball milling and, instead, diffraction lines of the intermediate phase of Fe3O4 plus FeO formed. The magnetization and coercivity of the Fe2O3 ‧ 0.8Fe powders were changed by the solid state reaction process of Fe2O3 by Fe during ball milling. The coercivity of the Fe2O3 ‧ 0.8Fe powders increased with increasing milling time and reached a maximum value of 340 Oe after 5 h of ball milling. This indicates the grain size of Fe3O4 was clearly reduced during ball milling. The magnetic properties of the annealed powders depend on the amount of magnetic Fe and Fe3O4 phases.