Through the electrostatic interaction between the poly-diallydimethylammonium chloride (PDDA) modified Multi-walled carbon nanotube (MWNT) and SnO2 suspension in 1mM NaNo3 solution, MWNT-SnO2 nanocomposites (MSC) for anode electrodes of a Li-ion battery were successfully fabricated by colloidal heterocoagulation method. TEM observation showed that most of the SnO2 nanoparticles were uniformly deposited on the outside surface of the MWNT. Galvanostatic charge/discharge cycling tests showed that MSC anodes exhibited higher specific capacities than bare MWNT and better cyclability than unsupported nano-SnO2 anodes. Also, after 20 cycles, the MSC anode fabricated by heterocoagulation method showed more stable cycle properties than the simply mixed MSC anode. These improved electrochemical properties are attributed to the MWNT, which adsorbs the mechanical stress induced from volume change and increasing electrical conductivity of the MSC anode, and suppresses the aggregation between the SnO2 nanoparticles.
Non-sintering cement was manufactured with briquette ash. Alkali activator for compression bodies used a NaOH solution. In order to apply alkali-activated briquette ash and the non-sintering cement to concrete, several experimental studies were performed. It was necessary to study the binder obtained by means of a substitute for the cement. This study concentrated on strength development according to the concentration of NaOH solution, the curing temperature, and the curing time. The highest compressive strength of compression bodies appeared as 353kgf/cm2 cured at 80˚C for 28 days. This result indicates that a higher curing temperature is needed to get a higher strength body. Also, geopolymerization was examined by SEM and XRD analysis after the curing of compression bodies. According to SEM and XRD, the main reaction product in the alkali activated briquette ash is aluminosilicate crystal.
Composites of gadolinium-doped ceria/magnesia(CGO/MgO) were synthesized and characterized for the electrolytes of intermediate temperature solid oxide fuel cells. XRD and SEM results revealed that composite electrolytes consisted of their own phases after sintering at 1400˚C without noticeable solid solution of Mg into CGO. As the MgO content increased, the total electrical conductivity decreased, which might be attributed to the decrease of grain boundary conductivity, possibly due to the lowering of the continuity of the CGO grains and blocking effects of the insulating MgO phase. The space charge effect may not be a significant factor to affect the electrical conductivity of the CGO/MgO composites.
Positive temperature coefficient of resistivity (PTCR) characteristics of (1-x)BaTiO3-x(Bi0.5K0.5)TiO3ceramics doped with Nb2O5 were investigated in order to develop the Pb-free PTC thermistor available at hightemperatures of >120oC. The PTCR characteristics appearing in the (Bi0.5Ki0.5)TiO3 (<5mol%) incorporatedBaTiO3 ceramics, which might be mainly due to Bi+3 ions substituting for Ba+2 sites. The 0.99BaTiO3-0.01(Bi0.5K0.5)TiO3 ceramics showed good PTCR characteristics of a low resistivity at room temperature (ρr) of31 Ω·cm, a high ρmax/ρmin ratio of 5.38×103, and a high resistivity temperature factor (α) of 17.8%/oC. Theaddition of Nb2O5 to 0.99BaTiO3-0.01(Bi0.5K0.5)TiO3 ceramics further improved the PTCR characteristics.Especially, 0.025mol% Nb2O5 doped 0.99BaTiO3-0.01(Bi0.5K0.5)TiO3 ceramics exhibited a significantly increasedρmax/ρmin ratio of 8.7×103 and a high α of 18.6%/oC, along with a high Tc of 148oC despite a slightly increasedρr of 39 Ω·cm.
Tetragonal-Ni1-xPdxSi/Si (001) structure was studied by using density functional theory (DFT). An epitaxial interface between 2×2×4 (001) tetragonal-NiSi supercell and 1×1×2 (001) Si supercell was first constructed by adjusting the lattice parameters of B2-NiSi structure to match those of the Si structure. We chose Ni atoms as a terminating layer of the B2-NiSi; the equilibrium gap between the tetragonal-NiSi and Si was calculated to be 1.1 Å. The Ni atoms in the structure moved away from the original positions along the z-direction in a systematic way during the energy minimization. Two different Ni sites were identified at the interface and the bulk, respectively. The two Ni sites at the interface have 6 and 7 coordination numbers. The Ni sites with coordination number 6 at the interface were located farther away from the interface, and were more favorable for Pd substitution.
The effect of annealing treatment conditions on the interfacial adhesion energy between electrolessplated Ni film and polyimide substrate was evaluated using a 180˚ peel test. Measured peel strength values are 26.9±0.8, 22.4±0.8, 21.9±1.5, 23.1±1.3, 16.1±2.0 and 14.3±1.3g/mm for annealing treatment times during 0, 1, 3, 5, 10, and 20 hours, respectively, at 200˚C in ambient environment. XPS and AES analysis results on peeled surfaces clearly reveal that the peeling occurs cohesively inside polyimide. This implies a degradation of polyimide structure due to oxygen diffusion through interface between Ni and polyimide, which is also closely related to the decrease in the interfacial adhesion energy due to thermal treatment in ambient conditions.
The through-thickness variations of strain and microstructure of high-speed hot rolled 1050 pure aluminum sheet were investigated. The specimens of 1050 aluminum were rolled at temperatures ranging from 410 to 560˚C at a rolling speed of 15 m/s without lubrication and quenched in water at an interval of 30ms after rolling. The redundant shear strain induced by high friction between rolls and the aluminum sheet was increased largely beneath the surface at a rolling reduction above 50%. Recrystallization occurred in the surface regions of the specimen rolled to reduction of 65% at 510˚C, while only recovery occurred in the other regions.
BGA test sockets failed earlier than the expected life-time due to abnormal signal delay, shown especially at the low temperature (-50˚C). Analysis of failed sockets was conducted by EDX, AES, and XRD. A SnO layer contaminated with C was found to form on the surface of socket pins. The formation of SnO layer was attributed to the repeated Sn transfer from BGA balls to pin surface and instant oxidation of fresh Sn. As a result, contact resistance increased, inducing signal delay. Abnormal signal delay at the low temperature was attributed to the increasing resistivity of Sn oxide with decreasing temperature, as manifested by the resistance measurement of SnO2.
The effect of silver nanoparticles (NPs) incorporation on the electronic properties of poly (3, 4-ethylenedioxythiphene) : poly(styrenesulfonate) (PEDOT : PSS) films was investigated. The surface of silver NPs was stabilized with trisodium citrate to control the size of silver NPs and prevent their aggregation. We obtained ca. 5 nm sized silver NPs and dispersed NPs in PEDOT : PSS solution. Sheet resistance, surface morphology, bonding state, and work function values of the PEDOT : PSS films were modified by silver NPs incorporation as well as annealing temperature. Sodium in silver NPs solution could lead to a decrease of work function of PEDOT : PSS; however, large content of silver NPs have an effect on the increase in work function, resulting from charge localization on the silver NPs and a decrease in the number of charge-trapping-related defects by chemical bond formation.
Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.