This study investigates the microstructural properties of CoCrFeMnNi high entropy alloy (HEA) oxynitride thin film. The HEA oxynitride thin film is grown by the magnetron sputtering method using nitrogen and oxygen gases. The grown CoCrFeMnNi HEA film shows a microstructure with nanocrystalline regions of 5~20 nm in the amorphous region, which is confirmed by high-resolution transmission electron microscopy (HR-TEM). From the TEM electron diffraction pattern analysis crystal structure is determined to be a face centered cubic (FCC) structure with a lattice constant of 0.491 nm, which is larger than that of CoCrFeMnNi HEA. The HEA oxynitride film shows a single phase in which constituting elements are distributed homogeneously as confirmed by element mapping using a Cs-corrected scanning TEM (STEM). Mechanical properties of the CoCrFeMnNi HEA oxynitride thin film are addressed by a nano indentation method, and a hardness of 8.13 GPa and a Young’s modulus of 157.3 GPa are obtained. The observed high hardness value is thought to be the result of hardening due to the nanocrystalline microstructure.

We report on the fabrication and characterization of a novel Cu2O/CuO heterojunction structure with CuO nanorods embedded in Cu2O thin film as an efficient photocathode for photoelectrochemical (PEC) solar water splitting. A CuO nanorod array was first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method; then, a Cu2O thin film was electrodeposited onto the CuO nanorod array to form an oxide semiconductor heterostructure. The crystalline phases and morphologies of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy, as well as Raman scattering. The PEC properties of the fabricated Cu2O/CuO heterojunction photocathode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the Cu2O/CuO photocathode was found to exhibit negligible dark current and high photocurrent density, e.g. −1.05 mA/cm2 at −0.6 V vs. Hg/HgCl2 in 1 mM Na2SO4 electrolyte, revealing the effective operation of the oxide heterostructure. The photocurrent conversion efficiency of the Cu2O/CuO photocathode was estimated to be 1.27% at −0.6 V vs. Hg/HgCl2. Moreover, the PEC current density versus time (J-T) profile measured at −0.5 V vs. Hg/HgCl2 on the Cu2O/CuO photocathode indicated a 3-fold increase in the photocurrent density compared to that of a simple Cu2O thin film photocathode. The improved PEC performance was attributed to a certain synergistic effect of the bilayer heterostructure on the light absorption and electron-hole recombination processes.

This study suggested comprehensive structural characterization methods for the commercial blue light emitting diodes(LEDs). By using the Z-contrast intensity profile of Cs-corrected high-angle annular dark field scanning transmission electron microscope(HAADF-STEM) images from a commercial lateral GaN-based blue light emitting diode, we obtained important structural information on the epilayer structure of the LED, which would have beendifficult to obtain by conventional analysis. This method was simple but very powerful to obtain structural and chemical information on epi-structures in a nanometer-scale resolution. One of the examples was that we could determine whether the barrier in the multi-quantum well(MQW) was GaN or InGaN. Plan-view TEM observations were performed from the commercial blue LED to characterize the threading dislocations(TDs) and the related V-pit defects. Each TD observed in the region with the total LED epilayer structure including the MQW showed V-pit defects for almost of TDs independent of the TD types: edge-, screw-, mixed TDs. The total TD density from the region with the total LED epilayer structure including the MQW was about 3.6 × 108 cm−2 with a relative ratio of Edge- : Screw- :Mixed-TD portion as 80%: 7%: 13%. However, in the mesa etched region without the MQW total TD density was about 2.5 × 108 cm−2 with a relative ratio of Edge- : Screw- :Mixed TD portion of 86%: 5%: 9 %. The higher TD density in the total LED epilayer structure implied new generation of TDs mostly from the MQW region.

We have grown AlN nanorods and AlN films using plasma-assisted molecular beam epitaxy by changing the Al source flux. Plasma-assisted molecular beam epitaxy of AlN was performed on c-plane Al2O3 substrates with different levels of aluminum (Al) flux but with the same nitrogen flux. Growth behavior of AlN was strongly affected by Al flux, as determined by in-situ reflection high energy electron diffraction. Prior to the growth, nitridation of the Al2O3 substrate was performed and a two-dimensionally grown AlN layer was formed by the nitridation process, in which the epitaxial relationship was determined to be [11-20]AlN//[10-10]Al2O3, and [10-10]AlN//[11-20]Al2O3. In the growth of AlN films after nitridation, vertically aligned nanorod-structured AlN was grown with a growth rate of 1.6μm/h, in which the growth direction was<0001>, for low Al flux. However, with high Al flux, Al droplets with diameters of about 8μm were found, which implies an Al-rich growth environment. With moderate Al flux conditions, epitaxial AlN films were grown. Growth was maintained in two-dimensional or three-dimensional growth mode depending on the Al flux during the growth; however, final growth occurred in three-dimensional growth mode. A lowest root mean square roughness of 0.6 nm (for 2μm×2μm area) was obtained, which indicates a very flat surface.

We report plasma-assisted molecular beam epitaxy of InXGa1-XN films on c-plane sapphire substrates. Prior to thegrowth of InXGa1-XN films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growthmode. For the growth of GaN, Ga flux of 3.7×10−8 torr as a beam equivalent pressure (BEP) and a plasma power of 150W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by in-situ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showedlower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEPvalue of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that ofInN, which is probably caused by the higher vapor pressure of In. For the growth of InxGa1-xN films with different Incompositions, total III-element flux (Ga plus In BEPs) was set to 3.7×10−8 torr, which was the BEP value for the 2D growthof GaN. The In compositions of the InxGa1-xN films were determined to be 28, 41, 45, and 53% based on the peak positionof (0002) reflection in x-ray θ-2θ measurements. The growth of InxGa1-xN films did not show a streaky RHEED pattern butshowed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered basedon the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migrationvelocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum valueof 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness valueof 0.71nm.

We report growth of epitaxial AlN thin films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. To achieve two-dimensional growth the substrates were nitrided by nitrogen plasma prior to the AlN growth, which resulted in the formation of a two-dimensional single crystalline AlN layer. The formation of the two-dimensional AlN layer by the nitridation process was confirmed by the observation of streaky reflection high energy electron diffraction (RHEED) patterns. The growth of AlN thin films was performed on the nitrided AlN layer by changing the Al beam flux with the fixed nitrogen flux at 860˚C. The growth mode of AlN films was also affected by the beam flux. By increasing the Al beam flux, two-dimensional growth of AlN films was favored, and a very flat surface with a root mean square roughness of 0.196 nm (for the 2 μm × 2 μm area) was obtained. Interestingly, additional diffraction lines were observed for the two-dimensionally grown AlN films, which were probably caused by the Al adlayer, which was similar to a report of Ga adlayer in the two-dimensional growth of GaN. Al droplets were observed in the sample grown with a higher Al beam flux after cooling to room temperature, which resulted from the excessive Al flux.

We report the structural characterization of BixZn1-xO thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, BixZn1-xO thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure α-Bi2O3 or the tetragonal structure β-Bi2O3 by means of XRD θ-2θ measurements, as the observed diffraction peaks of the 2θ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure α-Bi2O3 at 28.064 and the reflection of the (201) plane for the tetragonal structure β-Bi2O3 at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure α-Bi2O3 phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite BixZn1-xO thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of α-Bi2O3. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the α-Bi2O3 phase in the wurtzite (Bi)ZnO matrix.

Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.

In many climatic conditions, there is UV ray, which is called ultraviolet rays, which has the greatest effect on sealing materials. Because UV has high energy, it changes the internal structure of polymer and causes quality deterioration. In addition, temperature, humidity, and rainfall, snowfall, and atmospheric pollutants are also factors to be avoided in maintaining the integrity of the sealant. In this study, we tried to obtain reproducibility by using a composite deterioration test device which can describe the environment of the outside air as a part of the research project to investigate the weather change in the prototype of the structural sealant. The outdoor exposure test result and the composite deterioration test device Correlation analysis. In the future, it will be possible to predict the changes in the physical properties of the structural sealant by applying the composite deterioration test equipment and outdoor exposure test data.

The curtain wall performance test is mainly carried out to prevent any problems that may occur after the installation by checking whether there is a problem beforehand in the construction of the outer wall of the middle and large type construction. Since it is tested under harsh environmental conditions by applying domestic and foreign standards, many problems are found, and the biggest purpose is to improve the problems of design and construction through testing and to install better quality window products. In this study, the structural sealant products distributed in Korea were exposed to the outdoor exposure zone of the Seosan outdoor exposure test site, and compared with the curtain wall performance test of the product and the degradation of the product after 12 months outdoor exposure. In the future, it will be possible to apply the performance evaluation to the product comparison evaluation after exposing for more than 2 years.

본 최근 건축물 외벽공사에 커튼월 공법의 사용이 증가하고 있다. 외벽 커튼월 공법은 공기단축 및 경제적 효용이 크다는 장점으로 인해 건물의 외벽으로도 널리 시공되고 있다. 그러나, 커튼월 공법의 프레임과 유리를 연결해 주는 구조용 실란트에 대한 내후성 및 구조물의 거동에 대한 열화를 대체한 시험은 KS F 4910 규격에는 부재한 실정으로 안정적인 커튼월 공법 도입과 품질향상을 위해서는 필요한 요소이다. 본 연구에서는 외기환경하에서 거동에 대한 탄성복원력시험을 실시하였다. 구조용 실란트를 대상으로 열에 대한 실링재의 열화를 평가하였다. 국내에서는 구조용 실란트의 가변형 변위거동에 대한 연구는 부족한 실정으로 본 연구에서는 외기 환경에 노출된 열화조건을 대체하여 실 험실 조건에서 재현한 결과를 확인하고, 설계에 반영하고자 한다. 본 연구 결과에 따르면, 기존의 구조용 실링재는 KS F 4910의 품질기준은 만 족하지만, 본 연구에서 실시한 조건에서는 시험체의 파단과 표면의 균열 등이 발생하는 것을 확인하였다. 특히, 내후성 시험에서는 시험체 모두 불용의 상태를 확인하여 향후, 커튼월 공법에 사용되는 구조용 실링재의 장기적인 내구성능 평가가 필요한 것으로 판단된다. 따라서, 기존의 구조용 실링재가 현장에 적용되기 위해서는 별도의 내구성능 평가를 실시가 요구된다.

본 연구에서는 컨테이너 터미널의 물류역량이 서비스 품질과 고객반응에 어떠한 영향을 미치는지 파악하여 향후 컨테이너 터미널의 마케팅 전략 수립에 시사점을 제공하고자 한다. 표본설계는 한국선주협회, 한국선박관리업협회에 등록된 선사 중 부산항 컨테이너 터미널을 이용하고 있는 선사별로 2011년 12월 5일부터 23일까지 5~8부의 설문지를 직접방문을 통하여 배포하고 회수된 설문지 243부를 분석하였다. 실증분석 결과 서비스 품질과 고객반응에 정(+)의 영향을 미치는 물류역량 요인 중 관리역량이 가장 큰 영향을 미치는 것으로 나타났고, 고객반응에 정(+)의 영향을 미치는 서비스품질 요인 중 공감성이 가장 큰 영향을 미치는 것으로 나타났다. 그러므로 컨테이너 터미널에서는 적/양하를 계획할 때 고객의 요구사항을 정확히 파악하여 이를 적극적으로 반영하고 고객에게 최상의 서비스를 제공하여야 할 것이다.

인산증시가 야산개발지에 재배되는 대두의 식물체중의 무기성분과 수양 및 수양구성 요소에 미치는 영향을 검토한 바 그 결과를 요약하면 다음과 같다. 1. 경장, 분지수는 토양중의 인산함량과 수량은 개화기 경엽중의 인산함량과 각각 정의 상관관계를 보였다 2. 경장, 분지수, 총건물중, 엽수, 100입중, 그리고 수량이 인산증시와 정의 상관관계를 보였다. 3. 무린산구에 대비한 최대 인산시용구의 증수율은 46.2kg/10a에서 평균 69％였다.