본 연구는 다시마 양식을 위한 통합 자동화 시스템을 개발하고, 이를 통해 생산성, 비용 효율성, 환경적 지속 가능성을 모두 개선하는 데 중점을 두고 있다. 기존의 노동 집약적 수확 방식과 넓은 공간을 필요로 하는 수평 건조 방식은 비효율적이며, 환경적 부작 용을 초래했다. 이에 본 연구는 자동화된 수확 시스템, 해상-육상 연계 운송 시스템, 그리고 수직 건조 시스템을 통합적으로 개발하여 양 식업의 생산성을 극대화하고 자원 사용을 최적화하였다. 자동화된 수확 시스템은 작업 속도를 약 35% 향상시켰으며, 작업의 일관성을 유지하여 품질 오차율을 2% 이하로 줄이는 성과를 보였다. 해상-육상 연계 운송 시스템은 모듈형 컨테이너를 활용하여 운송 중 손상률 을 기존 15%에서 5%로 감소시켰고, 운송 시간을 평균 6시간에서 4시간으로 단축하였다. 또한, 수직 건조시스템은 고밀도 적재와 자연 대류 방식을 도입하여 건조 시간을 기존 48시간에서 28시간으로 40% 단축하였으며, 에너지 소비를 25% 감소시켰다. 이러한 시스템은 데이터 기반으로 설계 및 검증되었으며, 통합적으로 양식업의 경제성 향상과 환경적 부담 감소를 동시에 실현하였다. 본 연구의 결과는 다른 해조류 양식에도 적용 가능하며 지속 가능한 해양 자원 관리에 기여할 것으로 기대된다.

In this study, we fabricated high quality color conversion component with green/red phosphor and low melting glass frit. The color conversion component was prepared by placing the green and red phosphor layer on slide glass via screen printing process. The properties of color conversion component could be controlled by changing coating sequence, layer thickness and heat treatment temperature. We discovered that optical properties of color conversion component were generally determined by the lowest layer. On the other hand, the heat treatment temperature also affected to correlated color temperature (CCT) and color rending index (CRI). The color conversion component with a green (lower) - red (upper) layer which was sintered at 550 oC showed the best optical properties: CCT, CRI and luminance efficacy were 3340 K, 78, and 56.5 lm/w, respectively.

We have grown AlN nanorods and AlN films using plasma-assisted molecular beam epitaxy by changing the Al source flux. Plasma-assisted molecular beam epitaxy of AlN was performed on c-plane Al2O3 substrates with different levels of aluminum (Al) flux but with the same nitrogen flux. Growth behavior of AlN was strongly affected by Al flux, as determined by in-situ reflection high energy electron diffraction. Prior to the growth, nitridation of the Al2O3 substrate was performed and a two-dimensionally grown AlN layer was formed by the nitridation process, in which the epitaxial relationship was determined to be [11-20]AlN//[10-10]Al2O3, and [10-10]AlN//[11-20]Al2O3. In the growth of AlN films after nitridation, vertically aligned nanorod-structured AlN was grown with a growth rate of 1.6μm/h, in which the growth direction was<0001>, for low Al flux. However, with high Al flux, Al droplets with diameters of about 8μm were found, which implies an Al-rich growth environment. With moderate Al flux conditions, epitaxial AlN films were grown. Growth was maintained in two-dimensional or three-dimensional growth mode depending on the Al flux during the growth; however, final growth occurred in three-dimensional growth mode. A lowest root mean square roughness of 0.6 nm (for 2μm×2μm area) was obtained, which indicates a very flat surface.

We report plasma-assisted molecular beam epitaxy of InXGa1-XN films on c-plane sapphire substrates. Prior to thegrowth of InXGa1-XN films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growthmode. For the growth of GaN, Ga flux of 3.7×10−8 torr as a beam equivalent pressure (BEP) and a plasma power of 150W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by in-situ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showedlower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEPvalue of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that ofInN, which is probably caused by the higher vapor pressure of In. For the growth of InxGa1-xN films with different Incompositions, total III-element flux (Ga plus In BEPs) was set to 3.7×10−8 torr, which was the BEP value for the 2D growthof GaN. The In compositions of the InxGa1-xN films were determined to be 28, 41, 45, and 53% based on the peak positionof (0002) reflection in x-ray θ-2θ measurements. The growth of InxGa1-xN films did not show a streaky RHEED pattern butshowed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered basedon the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migrationvelocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum valueof 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness valueof 0.71nm.

We report growth of epitaxial AlN thin films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. To achieve two-dimensional growth the substrates were nitrided by nitrogen plasma prior to the AlN growth, which resulted in the formation of a two-dimensional single crystalline AlN layer. The formation of the two-dimensional AlN layer by the nitridation process was confirmed by the observation of streaky reflection high energy electron diffraction (RHEED) patterns. The growth of AlN thin films was performed on the nitrided AlN layer by changing the Al beam flux with the fixed nitrogen flux at 860˚C. The growth mode of AlN films was also affected by the beam flux. By increasing the Al beam flux, two-dimensional growth of AlN films was favored, and a very flat surface with a root mean square roughness of 0.196 nm (for the 2 μm × 2 μm area) was obtained. Interestingly, additional diffraction lines were observed for the two-dimensionally grown AlN films, which were probably caused by the Al adlayer, which was similar to a report of Ga adlayer in the two-dimensional growth of GaN. Al droplets were observed in the sample grown with a higher Al beam flux after cooling to room temperature, which resulted from the excessive Al flux.