In this study, we fabricated high quality color conversion component with green/red phosphor and low melting glass frit. The color conversion component was prepared by placing the green and red phosphor layer on slide glass via screen printing process. The properties of color conversion component could be controlled by changing coating sequence, layer thickness and heat treatment temperature. We discovered that optical properties of color conversion component were generally determined by the lowest layer. On the other hand, the heat treatment temperature also affected to correlated color temperature (CCT) and color rending index (CRI). The color conversion component with a green (lower) - red (upper) layer which was sintered at 550 oC showed the best optical properties: CCT, CRI and luminance efficacy were 3340 K, 78, and 56.5 lm/w, respectively.

We have grown AlN nanorods and AlN films using plasma-assisted molecular beam epitaxy by changing the Al source flux. Plasma-assisted molecular beam epitaxy of AlN was performed on c-plane Al2O3 substrates with different levels of aluminum (Al) flux but with the same nitrogen flux. Growth behavior of AlN was strongly affected by Al flux, as determined by in-situ reflection high energy electron diffraction. Prior to the growth, nitridation of the Al2O3 substrate was performed and a two-dimensionally grown AlN layer was formed by the nitridation process, in which the epitaxial relationship was determined to be [11-20]AlN//[10-10]Al2O3, and [10-10]AlN//[11-20]Al2O3. In the growth of AlN films after nitridation, vertically aligned nanorod-structured AlN was grown with a growth rate of 1.6μm/h, in which the growth direction was<0001>, for low Al flux. However, with high Al flux, Al droplets with diameters of about 8μm were found, which implies an Al-rich growth environment. With moderate Al flux conditions, epitaxial AlN films were grown. Growth was maintained in two-dimensional or three-dimensional growth mode depending on the Al flux during the growth; however, final growth occurred in three-dimensional growth mode. A lowest root mean square roughness of 0.6 nm (for 2μm×2μm area) was obtained, which indicates a very flat surface.

We report plasma-assisted molecular beam epitaxy of InXGa1-XN films on c-plane sapphire substrates. Prior to thegrowth of InXGa1-XN films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growthmode. For the growth of GaN, Ga flux of 3.7×10−8 torr as a beam equivalent pressure (BEP) and a plasma power of 150W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by in-situ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showedlower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEPvalue of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that ofInN, which is probably caused by the higher vapor pressure of In. For the growth of InxGa1-xN films with different Incompositions, total III-element flux (Ga plus In BEPs) was set to 3.7×10−8 torr, which was the BEP value for the 2D growthof GaN. The In compositions of the InxGa1-xN films were determined to be 28, 41, 45, and 53% based on the peak positionof (0002) reflection in x-ray θ-2θ measurements. The growth of InxGa1-xN films did not show a streaky RHEED pattern butshowed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered basedon the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migrationvelocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum valueof 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness valueof 0.71nm.

We report growth of epitaxial AlN thin films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. To achieve two-dimensional growth the substrates were nitrided by nitrogen plasma prior to the AlN growth, which resulted in the formation of a two-dimensional single crystalline AlN layer. The formation of the two-dimensional AlN layer by the nitridation process was confirmed by the observation of streaky reflection high energy electron diffraction (RHEED) patterns. The growth of AlN thin films was performed on the nitrided AlN layer by changing the Al beam flux with the fixed nitrogen flux at 860˚C. The growth mode of AlN films was also affected by the beam flux. By increasing the Al beam flux, two-dimensional growth of AlN films was favored, and a very flat surface with a root mean square roughness of 0.196 nm (for the 2 μm × 2 μm area) was obtained. Interestingly, additional diffraction lines were observed for the two-dimensionally grown AlN films, which were probably caused by the Al adlayer, which was similar to a report of Ga adlayer in the two-dimensional growth of GaN. Al droplets were observed in the sample grown with a higher Al beam flux after cooling to room temperature, which resulted from the excessive Al flux.

We report the structural characterization of BixZn1-xO thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, BixZn1-xO thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure α-Bi2O3 or the tetragonal structure β-Bi2O3 by means of XRD θ-2θ measurements, as the observed diffraction peaks of the 2θ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure α-Bi2O3 at 28.064 and the reflection of the (201) plane for the tetragonal structure β-Bi2O3 at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure α-Bi2O3 phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite BixZn1-xO thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of α-Bi2O3. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the α-Bi2O3 phase in the wurtzite (Bi)ZnO matrix.

서론 : 본 연구는 시각장애인 근로자를 대상으로 인간작업모델을 적용하여 시각장애인의 직업 유지 과정과 어려움을 파악하고, 개입 방법을 소개하여 향후 시각장애인의 직업 적응과 유지를 위한 효과적인 개입 방향을 제시하고자 하였다. 본론 : 2009년 3월부터 11월까지 안마사로 취업한 시각장애인 근로자 1명을 대상으로 인간작업모델에 기초한 면담과 작업환경인식평가(Work Environment Impact Scale)를 실시하였고, 대상자가 취업한 업체의 사업주와 관리자 각 1명씩을 대상으로 면담을 실시하여 문제점을 파악하였다. 인간작업모델의 치료 전략을 활용하여 개입하였고, 개입 후 면담과 사후 평가를 수행하였다. 그 결과 시각장애인의 작업환경에 대한 인식에 긍정적인 변화가 나타났다. 결론 : 직업재활 과정에서 인간작업모델을 적용하는 것은 대상자를 보다 전인적이고 종합적으로 판단할 수 있는 근거가 되며, 대상자를 바라보는 관점을 변화시키고 다양한 해결 방법을 제시하여 작업치료서비스의 전문성과 질을 향상 시키고, 관련 영역을 확대 하는데 도움이 될 것이다.

본 연구(硏究)는 율무 주산단지(主産團地)인 연천 지역(地域)에서 율무에 피해(被害)를 주는 조명나방에 대한 발생생태(發生生態)를 조사(謂査)하여 방제(防除) 기초자료(基礎資料)로 활용(活用)하고자 조사(調査)한 결과(結果)는 다음과 같다. 1. 율무조명나방은 연간(年間) 3회(回) 발생(發生)하였으며, 1화기(化基)는 5월 중순(中旬)~6월 하순(下旬), 2화기(化期) 7월 하순(下旬)~8월 중순(中旬), 3화기(化期) 8월 하순(下旬)~9월 중순(中旬)이었으며 3화기(化期) 유충(幼蟲)이 율무 그루터기나 줄기측에서 월동(越冬) 후(後) 이듬해5~6월(月)에 번데기 로 되었다. 2. 유충(幼蟲) 월동(越冬) 부위(部位)는 지상부(地上部)에서 68.4%, 지제부 이하(以下)에 31.6%가 분포(分布)하였고 지상부(地上部) 식물체중(植物體中) 1절§in4절까지 분포(分布)하였다. 3. 조명나방의 각(各) 태별(態別) 소요기간(所要期間)은 난기간(卵基間) 3~4일(日), 유충기간(幼蟲期間) 16§in36일(日), 용기간(踊期間) 4~11일(日), 성충(成蟲)의 수명(壽命)은 6~12일(日)이었다. 4. 율무 조명나방의 시기별(時期別) 율무 식물체가해부위(植物體加害部位)는 6月까지 잎, 7月 이후(以後)는 줄기를 식해(食害)하는 것으로 나타났다. 5. 율무 조명나방에 의한 율무 피해(被害)은 7월부터 나타나기 시작하여 9~10월(月)에 피해경율 33.7~37.6%로 가장 높았다.