간행물
한국재료학회지 KCI 등재 SCOPUS Korean Journal of Materials Research
- 발행기관 한국재료학회
- 자료유형 학술지
- 간기 월간
- ISSN 2799-8525 (Print)2799-8681 (Online)
- 수록기간 1991 ~ 2024
- 주제분류 공학 > 재료공학 공학 분류의 다른 간행물
- 십진분류KDC 530DDC 620
권호리스트/논문검색
제22권 제4호 (2012년 4월) 9건
1.
2012.04
구독 인증기관 무료, 개인회원 유료
Recently, various attempts to produce a heat sink made of Al 6xxx alloys have been carried out using die-casting. In order to apply die-casting, the Al alloys should be verified for die-soldering ability with die steel. It is generally well known that both Fe and Mn contents have effects on decreasing die soldering, especially with aluminum alloys containing substantial amounts of Si. However, die soldering has not been widely studied for the low Si aluminum (1.0~2.0wt%) alloys. Therefore, in this study, an investigation was performed to consider how the soldering phenomena were affected by Fe and Mn contents in low Si aluminum alloys. Each aluminum alloy was melted and held at 680˚C. Then, STD61 substrate was dipped for 2 hr in the melt. The specimens, which were air cooled, were observed using a scanning electron microscope and were line analyzed by an electron probe micro analyzer. The SEM results of the dipping soldering test showed an Al-Fe inter-metallic layer in the microstructure. With increasing Fe content up to 0.35%, the Al-Fe inter-metallic layer became thicker. In Al-1.0%Si alloy, the additional content of Mn also increased the thickness of the inter-metallic layer compared to that in the alloy without Mn. In addition, EPMA analysis showed that Al-Fe inter-metallic compounds such as Al2Fe, Al3Fe, and Al5Fe2 formed in the die soldering layers.
4,000원
2.
2012.04
구독 인증기관 무료, 개인회원 유료
In this study, we demonstrated a simple and eco-friendly method, including mechanical polishing and attrition milling processes, to recycle sputtered indium tin oxide targets to indium tin oxide nanopowders and targets for sputtered transparent conductive films. The utilized indium tin oxide target was first pulverized to a powder of sub- to a few- micrometer size by polishing using a diamond particle coated polishing wheel. The calcination of the crushed indium tin oxide powder was carried out at 1000˚C for 1 h, based on the thermal behavior of the indium tin oxide powder; then, the powders were downsized to nanometer size by attrition milling. The average particle size of the indium tin oxide nanopowder was decreased by increasing attrition milling time and was approximately 30 nm after attrition milling for 15 h. The morphology, chemical composition, and microstructure of the recycled indium tin oxide nanopowder were investigated by FE-SEM, EDX, and TEM. A fully dense indium tin oxide sintered specimen with 97.4% of relative density was fabricated using the recycled indium tin oxide nanopowders under atmospheric pressure at 1500˚C for 4 h. The microstructure, phase, and purity of the indium tin oxide target were examined by FE-SEM, XRD, and ICP-MS.
4,000원
3.
2012.04
구독 인증기관 무료, 개인회원 유료
Nanostructures of ZnO, such as nanowires, nanorods, nanorings, and nanobelts have been actively studied andapplied in electronic or optical devices owing to the increased surface to volume ratio and quantum confinement that theyprovide. ZnO seed layer (about 40nm thick) was deposited on Si(100) substrate by RF magnetron sputtering with power of60 W for 5 min. ZnO nanorods were grown on ZnO seed layer/Si(100) substrate at 95oC for 5 hr by hydrothermal methodwith concentrations of Zn(NO3)2·6H2O [ZNH] and (CH2)6N4 [HMT] precursors ranging from 0.02M to 0.1M. We observed themicrostructure, crystal structure, and photoluminescence of the nanorods. The ZnO nanorods grew with hexahedron shape tothe c-axis at (002), and increased their diameter and length with the increase of precursor concentration. In 0.06 M and 0.08M precursors, the mean aspect ratio values of ZnO nanorods were 6.8 and 6.5; also, ZnO nanorods had good crystal quality.Near band edge emission (NBE) and a deep level emission (DLE) were observed in all ZnO nanorod samples. The highestpeak of NBE and the lower DLE appeared in 0.06 M precursor; however, the highest peak of DLE and the lower peak ofNBE appeared in the 0.02 M precursor. It is possible to explain these phenomena as results of the better crystal quality andhomogeneous shape of the nanorods in the precursor solution of 0.06 M, and as resulting from the bed crystal quality and theformation of Zn vacancies in the nanorods due to the lack of Zn++ in the 0.02 M precursor.
4,000원
4.
2012.04
구독 인증기관 무료, 개인회원 유료
We report plasma-assisted molecular beam epitaxy of InXGa1-XN films on c-plane sapphire substrates. Prior to thegrowth of InXGa1-XN films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growthmode. For the growth of GaN, Ga flux of 3.7×10−8 torr as a beam equivalent pressure (BEP) and a plasma power of 150W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by in-situ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showedlower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEPvalue of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that ofInN, which is probably caused by the higher vapor pressure of In. For the growth of InxGa1-xN films with different Incompositions, total III-element flux (Ga plus In BEPs) was set to 3.7×10−8 torr, which was the BEP value for the 2D growthof GaN. The In compositions of the InxGa1-xN films were determined to be 28, 41, 45, and 53% based on the peak positionof (0002) reflection in x-ray θ-2θ measurements. The growth of InxGa1-xN films did not show a streaky RHEED pattern butshowed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered basedon the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migrationvelocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum valueof 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness valueof 0.71nm.
4,000원
5.
2012.04
구독 인증기관 무료, 개인회원 유료
The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An SiO2 diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and<100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.
4,000원
6.
2012.04
구독 인증기관 무료, 개인회원 유료
Ce3+-doped yttrium aluminum gallium garnet (YAGG:Ce3+), which is a green-emitting phosphor, was synthesizedby solid state reaction using α-phase or γ-phase of nano-sized Al2O3 as the Al source. The processing conditions and thechemical composition of phosphor for the maximum emission intensity were optimized on the basis of emission intensity undervacuum UV excitation. The optimum heating temperature for phosphor preparation was 1550oC. Photoluminescence propertiesof the synthesized phosphor were investigated in detail. From the excitation and emission spectra, it was confirmed that theYAGG:Ce3+ phosphors effectively absorb the vacuum UV of 120-200nm and emit green light positioned around 530nm. Thecrystalline phase of the alumina nanoparticles affected the particle size and the luminescence property of the synthesizedphosphors. Nano-sized γ-Al2O3 was more effective for the achievement of higher emission intensity than was nano-sized α-Al2O3. This discrepancy is considered to be because the diffusion of Al3+ into Y2O3 lattice is dependent on the crystalline phaseof Al2O3, which affects the phase transformation of YAGG:Ce3+ phosphors. The optimum chemical composition, having themaximum emission intensity, was (Y2.98Ce0.02)(Al2.8Ga1.8)O11.4 prepared with γ-Al2O3. On the other hand, the decay time of theYAGG:Ce3+ phosphors, irrespective of the crystalline phase of the nano-sized alumina source, was below 1 ms due to theallowed 5d→4f transition of the Ce3+ activator.
4,000원
7.
2012.04
구독 인증기관 무료, 개인회원 유료
CoSi2 was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt (Co(iPr-AMD)2) as a precursor and NH3 as a reactant; this reaction produced a highly conformal Co film with low resistivity (50 μΩcm). To prevent oxygen contamination, ex-situ sputtered Ti and in-situ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and O2 as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that CoSi2 was in a poly-crystalline state and formed at over 800˚C of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, CoSi2 about 40 nm thick was formed while the SiOx interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of CoSi2.
4,000원
8.
2012.04
구독 인증기관 무료, 개인회원 유료
The preparation of Sm2O3 doped CeO2 in Igepal CO-520/cyclohexane reverse micelle solutions has been studied. In the present work, we synthesized nanosized Sm2O3 doped CeO2 powders by reverse micelle process using aqueous ammonia as the precipitant; hydroxide precursor was obtained from nitrate solutions dispersed in the nanosized aqueous domains of a micro emulsion consisting of cyclohexane as the oil phase, and poly (xoyethylene) nonylphenylether (Igepal CO-520) as the non-ionic surfactant. The synthesized and calcined powders were characterized by Thermogravimetry-differential thermal analysis (TGA-DTA), X-ray diffraction analysis (XRD), and Transmission electron microscopy (TEM). The crystallite size was found to increase with increase in water to surfactant (R) molar ratio. Average particle size and distribution of the synthesized Sm2O3 doped CeO2 were below 10 nm and narrow, respectively. TG-DTA analysis shows that phase of Sm2O3 doped CeO2 nanoparticles changed from monoclinic to tetragonal at approximately 560˚C. The phase of the synthesized Sm2O3 doped CeO2 with heating to 600˚C for 30 min was tetragonal CeO2. This study revealed that the particle formation process in reverse micelles is based on a two step model. The rapid first step is the complete reduction of the metal to the zero valence state. The second step is growth, via reagent exchanges between micelles through the inter-micellar exchange.
3,000원
9.
2012.04
구독 인증기관 무료, 개인회원 유료
Optimal conditions for HA plasma spray-coating on Ti6Al4V alloy were investigated in order to obtain enhanced bone-bonding ability with Ti6Al4V alloy. The properties of plasma spray coated film were analyzed by SEM, XRD, surface roughness measurement, and adhesion strength test because the film's transformed phase and crystallinity were known to be influential to bone-bonding ability withTi6Al4V alloy. The films were formed by a plasma spray coating technique with various combinations of plasma power, spray distance, and auxiliary He gas pressure. The film properties were analyzed in order to determine the optimal spray coating parameters with which we will able to achieve enhanced bone-bonding ability with Ti6Al4V alloy. The most influential coating parameter was found to be the plasma spray distance to the specimen from the spray gun nozzle. Additionally, it was observed that a relatively higher film crystallinity can be obtained with lower auxiliary gas pressure. Moderate adhesion strength can be achievable at minimal plasma power. That is, adhesion strength is minimally dependent on the plasma power. The combination of shorter spray distance, lower auxiliary gas pressure, and moderate spray power can be recommended as the optimal spray conditions. In this study, optimal plasma spray coated films were formed with spray distance of 70 mm, plasma current of 800 A, and auxiliary gas pressure of 60 psi.
3,000원
