This study utilized the unified theory of acceptance and use of technology 2 (UTAUT2) to examine usage intentions associated with virtual fitting services. Six independent variables were examined: performance expectancy, effort expectancy, social influence, facilitating conditions, hedonic motivation, and habit. The study collected responses from 445 participants who had utilized virtual fitting services. Regarding factors related to usage intentions associated with these services, performance expectancy and social influence were found to significantly influence the usage intentions associated with photo-based virtual fitting services. Furthermore, performance expectancy, social influence, and habit significantly influenced the usage intention of avatar-based virtual fitting services. This suggests that higher levels of performance expectancy and social influence positively impact the usage intentions associated with both types of virtual fitting services, while habit influences only avatar-based virtual fitting services. Moreover, the findings confirm that effort expectancy, facilitating conditions, and hedonic motivation from UTAUT2 do not significantly influence usage intentions associated with virtual fitting services. By analyzing factors influencing potential customers’ virtual fitting service usage intentions, this study can suggest effective strategies to increase usage intentions for companies providing virtual fitting services. Additionally, these findings can be utilized in the formulation of virtual fitting service marketing strategies.

This study focused on how retail tech promotes differentiated customer experiences in offline fashion stores. The purpose of this study is to determine the effects of the characteristics of fashion retail tech stores on consumers’ flow and satisfaction. We surveyed Koreans aged 10 to 50 who had experienced offline fashion retail tech stores. The survey was conducted from April 28, 2023, to May 21, 2023. The total number of survey respondents was 200. The quantitative data collected through questionnaires was analyzed using SPSS 25.0. To reveal the effects of fashion retail tech store characteristics on consumer’s flow and satisfaction, frequency analysis, we conducted frequency analysis, factor analysis, reliability analysis, correlation analysis, and regression analysis. The results of this study, figured out that fashion retail tech store’s characteristics, including playfulness, efficiency, interaction, and information provision, have a significant impact on behavior flow, emotional flow, and satisfaction. As a result of analyzing the influence of consumers’ flow led to satisfaction, it was confirmed that emotional flow positively influenced satisfaction, but behavioral flow had no meaningful effect on satisfaction. The results of our study can be used to make a successful marketing strategy and can serve as foundational data for consumer research on retail-tech-applied offline fashion stores.

수출입 식물에 외래병해충이 전반되어 국내 환경 및 생태계를 막기 위한 법적방제가 식물검역이며, 이러한 유해 외래병해충을 방제하기 위하여 기존의 훈증제인 메틸브로마이드를 사용해 왔다. 그러나 메틸브로마이드 훈증제가 오존층 파괴물질로 지정돼 국제환경보호위 등에서 사용금지 협약이 발효됨에 따라 선진국가를 중심으로 이를 대체할 수 있는 검역 기술로서 이온화에너지(방사선) 이용이 활발하게 진행되고 있다. 한편 그동안 이온화에너지 이용한 식물검역은 해충방제에 촛점에 맞춰 진행되어 왔으나 최근 들어 잿빛곰팡이병, 푸른곰팡이병, 감귤궤양병 등 검역 및 저장성 병원균등에 의해 농산물 수출에 있어 상당한 제한을 받는 사례들이 나오고 있다. 일반적으로 이온화에너지 처리을 이용해 농산물 저장성 병원균을 사멸할 경우 농산물의 품질저하가 일어날 수 있는 이온화에너지 선량이 요구되므로 이온화 처리와 다른 살균처리를 병용하여 충분한 살균력의 획득과 감마선 사용 선량의 감소를 통한 품질 보존이 가능한 융복합 처리기술 개발이 필요하다. 그리하여 본 연구에서는 검역해충들이 사멸하는 이온화에너지 선량범위에서 저장성 병원균이 동시에 제어할 수 있는 융복합 검역기술을 검토하였다. 그 결과, 병용살균제(Sodium di-chloroisocyanurate, NaDCC)를 이용하여 병해충 동시검역 융·복합 기술을 개발하고 적용하여 방사선 병용처리에 따른 수출 농산물별 병해충에 따른 저장성 향상 및 실용화 가능성이 높음을 알 수 있었다.

We have grown AlN nanorods and AlN films using plasma-assisted molecular beam epitaxy by changing the Al source flux. Plasma-assisted molecular beam epitaxy of AlN was performed on c-plane Al2O3 substrates with different levels of aluminum (Al) flux but with the same nitrogen flux. Growth behavior of AlN was strongly affected by Al flux, as determined by in-situ reflection high energy electron diffraction. Prior to the growth, nitridation of the Al2O3 substrate was performed and a two-dimensionally grown AlN layer was formed by the nitridation process, in which the epitaxial relationship was determined to be [11-20]AlN//[10-10]Al2O3, and [10-10]AlN//[11-20]Al2O3. In the growth of AlN films after nitridation, vertically aligned nanorod-structured AlN was grown with a growth rate of 1.6μm/h, in which the growth direction was<0001>, for low Al flux. However, with high Al flux, Al droplets with diameters of about 8μm were found, which implies an Al-rich growth environment. With moderate Al flux conditions, epitaxial AlN films were grown. Growth was maintained in two-dimensional or three-dimensional growth mode depending on the Al flux during the growth; however, final growth occurred in three-dimensional growth mode. A lowest root mean square roughness of 0.6 nm (for 2μm×2μm area) was obtained, which indicates a very flat surface.

We report plasma-assisted molecular beam epitaxy of InXGa1-XN films on c-plane sapphire substrates. Prior to thegrowth of InXGa1-XN films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growthmode. For the growth of GaN, Ga flux of 3.7×10−8 torr as a beam equivalent pressure (BEP) and a plasma power of 150W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by in-situ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showedlower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEPvalue of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that ofInN, which is probably caused by the higher vapor pressure of In. For the growth of InxGa1-xN films with different Incompositions, total III-element flux (Ga plus In BEPs) was set to 3.7×10−8 torr, which was the BEP value for the 2D growthof GaN. The In compositions of the InxGa1-xN films were determined to be 28, 41, 45, and 53% based on the peak positionof (0002) reflection in x-ray θ-2θ measurements. The growth of InxGa1-xN films did not show a streaky RHEED pattern butshowed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered basedon the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migrationvelocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum valueof 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness valueof 0.71nm.

We report growth of epitaxial AlN thin films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. To achieve two-dimensional growth the substrates were nitrided by nitrogen plasma prior to the AlN growth, which resulted in the formation of a two-dimensional single crystalline AlN layer. The formation of the two-dimensional AlN layer by the nitridation process was confirmed by the observation of streaky reflection high energy electron diffraction (RHEED) patterns. The growth of AlN thin films was performed on the nitrided AlN layer by changing the Al beam flux with the fixed nitrogen flux at 860˚C. The growth mode of AlN films was also affected by the beam flux. By increasing the Al beam flux, two-dimensional growth of AlN films was favored, and a very flat surface with a root mean square roughness of 0.196 nm (for the 2 μm × 2 μm area) was obtained. Interestingly, additional diffraction lines were observed for the two-dimensionally grown AlN films, which were probably caused by the Al adlayer, which was similar to a report of Ga adlayer in the two-dimensional growth of GaN. Al droplets were observed in the sample grown with a higher Al beam flux after cooling to room temperature, which resulted from the excessive Al flux.

We report the structural characterization of BixZn1-xO thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, BixZn1-xO thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure α-Bi2O3 or the tetragonal structure β-Bi2O3 by means of XRD θ-2θ measurements, as the observed diffraction peaks of the 2θ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure α-Bi2O3 at 28.064 and the reflection of the (201) plane for the tetragonal structure β-Bi2O3 at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure α-Bi2O3 phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite BixZn1-xO thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of α-Bi2O3. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the α-Bi2O3 phase in the wurtzite (Bi)ZnO matrix.

최근 학술정보의 이용 방식이 인쇄매체 중심에서 디지털자료 중심으로 변화하고 있다. 디지털 기술을 통해 온라인상에서 학술정보를 신속하고 자유롭게 공유할 수 있다면, 학문의 진보는 더욱 가속화될 수 있을 것이다. 그러나 이를 위해서는 학술정보의 생산, 자금지원, 보급, 이용과 관련된 다양한 이해당사자들이 추구하는 목표가 상충하면서 만들어내는 법적, 제도적인 장애물의 해소가 선행되어야 한다. 이 글에서는 한국의 디지털 학술정보 유통 현황 및 관련된 법적 분쟁 사례를 알아보고, 이를 해결하기 위한 방안으로서 최근 각광받고 있는‘오픈 액세스(Open Access)’와 현재 한국에서의 오픈 액세스 추진 사례에 관하여 살펴보았다. 오픈 액세스는 저자들이 이용자들에게 재정적, 법률적, 기술적장벽 없이 인터넷을 통해 학술논문의 원문을 누구나 무료로 접근하여 읽고, 다운로드하고, 복제∙배포∙인쇄∙탐색∙링크할 수 있도록 허용하는 것을 의미한다. 비영리적 성격을 지닌 학술저작물의 경우 인간의 사상 또는 감정을 표현한 창작물이므로 저작권법의 보호를 받지만, 학문의 진보에 기여하기 위해서는 학술저작물의 공정하고 자유로운 이용이 이루어져야 한다. 한국에서도 공공영역을 중심으로 비영리 학술정보의 오픈 액세스를 확대한다면, 저작자와 이용자 모두의 이해관계를 충족시키면서 학문의 발전에도 이바지할 수 있을 것이다.

사과식초 제조를 위한 전단계로서 사과주스의 알코올발효 최적화를 실시하였다. 알코올발효 최적화를 위해 중심 합성계획이 사용되었으며, 이 때 독립변수로는 초기 당도(12, 14, 16, 18, 20 , ), 발효시간(48, 54, 60, 66, 72 hr, ), 발효온도(24, 26, 28, 30, , )로 설정하였으며, 종속변수로는 알코올함량, 환원당 함량, 당도, 산도를 살펴보았다. 발효조건에 따른 사과주스 알코올발효액의 알코올 함량은 3.4~6

초산발효조건에 따른 사과주스의 발효특성을 알아보기 위하여 flask scale에서 초기 알코올 농도, 당농도, 초산농도 및 종초접종량 조건에 따른 초산발효를 실시하였다. 초기 알코올농도 3, 5, 7, 9%를 달리하여 사과주스의 초산발효를 12일간 실시한 결과 알코올 함량 5% 일때 발효 10일 째 산도가 최대치 5.88%로 측정되었으며, 알코올 함량이 9%일 경우 초산발효가 정상적으로 진행되지 않았다. 초기 당 농도 1, 5, 10, 14 로