간행물
한국재료학회지 KCI 등재 SCOPUS Korean Journal of Materials Research
- 발행기관 한국재료학회
- 자료유형 학술지
- 간기 월간
- ISSN 2799-8525 (Print)2799-8681 (Online)
- 수록기간 1991 ~ 2024
- 주제분류 공학 > 재료공학 공학 분류의 다른 간행물
- 십진분류KDC 530DDC 620
권호리스트/논문검색
제21권 제5호 (2011년 5월) 9건
1.
2011.05
구독 인증기관 무료, 개인회원 유료
To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to 89˚C/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.
4,000원
2.
2011.05
구독 인증기관 무료, 개인회원 유료
We have synthesized bluish-green, highly-efficient BaSi2O2N2:Eu2+ and (Ba,Sr)Si2O2N2:Eu2+ phosphors through aconventional solid state reaction method using metal carbonate, Si3N4, and Eu2O3 as raw materials. The X-ray diffraction (XRD)pattern of these phosphors revealed that a BaSi2O2N2 single phase was obtained. The excitation and emission spectra showedtypical broadband excitation and emission resulting from the 5d to 4f transition of Eu2+. These phosphors absorb blue light ataround 450nm and emit bluish-green luminescence, with a peak wavelength at around 495 nm. From the results of anexperiment involving Eu concentration quenching, the relative PL intensity was reduced dramatically for Eu=0.033. A smallsubstitution of Sr in place of Ba increased the relative emission intensity of the phosphor. We prepared several white LEDsthrough a combination of BaSi2O2N2:Eu2+, YAG:Ce3+, and silicone resin with a blue InGaN-based LED. In the case of onlythe YAG:Ce3+-converted LED, the color rendering index was 73.4 and the efficiency was 127lm/W. In contrast, in theYAG:Ce3+ and BaSi2O2N2:Eu2+-converted LED, two distinct emission bands from InGaN (450nm) and the two phosphors (475-750nm) are observed, and combine to give a spectrum that appears white to the naked eye. The range of the color renderingindex and the efficiency were 79.7-81.2 and 117-128 lm/W, respectively. The increased values of the color rendering indexindicate that the two phosphor-converted LEDs have improved bluish-green emission compared to the YAG:Ce-converted LED.As such, the BaSi2O2N2:Eu2+ phosphor is applicable to white high-rendered LEDs for solid state lighting.
4,000원
3.
2011.05
구독 인증기관 무료, 개인회원 유료
This paper has relatively high technical standard and experimental skill. The fabrication of TCO film with hightransparency, low resistance and low chromaticity require exact control of several competing factors. This paper has resolvedthese problems reasonably well, thus recommended for publication. Indium tin oxide(ITO) thin films were by D.C. magnetronroll-to-roll sputter system utilizing ITO and SiO2 targets of ITO and SiO2. In this experiment, the effect of D.C. power, windingspeed, and oxygen flow rate on electrical and optical properties of ITO thin films were investigated from the view point ofsheet resistance, transmittance, and chromaticity(b*). The deposition of SiO2 was performed with RF power of 400W, Ar gasof 50sccm and the deposition of ITO, DC power of 600W, Ar gas of 50sccm, O2 gas of 0.2sccm, and winding speed of 0.56m/min. High quality ITO thin films without SiO2 layer had chromaticity of 2.87, sheet resistivity of 400ohm/square, and trans-mittance of 88% and SiO2-doped ITO Thin film with chromaticity of 2.01, sheet resistivity of 709ohm/square, and transmittanceof more than 90% were obtained. As a result, SiO2 was coated on PET before deposition of ITO, their chromaticity(b*) andtransmittance were better than previous results of ITO films. These results show that coating of SiO2 induced arisingchromaticity(b*) and transmittance. If the thickness of SiO2 is controlled, sheet resistance value of ITO film will be expected tobe better for touch screen. A four point probe and spectrophotometer are used to investigate the properties of ITO thin films.
4,000원
4.
2011.05
구독 인증기관 무료, 개인회원 유료
The present study was carried out to evaluate the microstructural and mechanical properties of cross-roll rolled pure copper sheets, and the results were compared with those obtained for conventionally rolled sheets. For this work, pure copper (99.99 mass%) sheets with thickness of 5 mm were prepared as the starting material. The sheets were cold rolled to 90% thickness reduction and subsequently annealed at 400˚C for 30 min. Also, to analyze the grain boundary character distributions (GBCDs) on the materials, the electron back-scattered diffraction (EBSD) technique was introduced. The resulting cold-rolled and annealed sheets had considerably finer grains than the initial sheets with an average size of 100 μM. In particular, the average grain size became smaller by cross-roll rolling (6.5 μM) than by conventional rolling (9.8 μM). These grain refinements directly led to enhanced mechanical properties such as Vickers micro-hardness and tensile strength, and thus the values showed greater increases upon cross-roll rolling process than after conventional rolling. Furthermore, the texture development of<112>//ND in the cross-roll rolling processed material provided greater enhancement of mechanical properties relative to the case of the conventional rolling processed material. In the present study, we systematically discuss the enhancement of mechanical properties in terms of grain refinement and texture distribution developed by the different rolling processes.
4,000원
5.
2011.05
구독 인증기관 무료, 개인회원 유료
Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of Me2Ga(N3)NH2C(CH3)3 with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750˚C. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.
4,000원
6.
2011.05
구독 인증기관 무료, 개인회원 유료
Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-SiO2 nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.
3,000원
7.
2011.05
구독 인증기관 무료, 개인회원 유료
Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such assensors and temperature compensation devices. NTC thermistor thick films of Ni1+xMn2-xO4+δ (x=0.05, 0, −0.05) werefabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T)characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between 25oC and 85oCwithout heat treatment. When the film was annealed at 600oC 1h, the resistivity of the film gradually decreased due tocrystallization and grain growth. The resistivity and the activation energy of films annealed at 600oC for 1 h were 5.203, 5.95,and 4.772KΩ·cm and 351, 326, and 299meV for Ni0.95Mn2.05O4+δ, NiMn2O4, and Ni1.05Mn1.95O4+δ, respectively. The annealingprocess induced insulating Mn2O3 in the Ni deficient Ni0.95Mn2.05O4+δ composition resulting in large resistivity and activationenergy. Meanwhile, excess Ni in Ni1.05Mn1.95O4+δ suppressed the abnormal grain growth and changed Mn3+ to Mn4+, givinglower resistivity and activation energy.
4,000원
8.
2011.05
구독 인증기관 무료, 개인회원 유료
As the performance of microelectronic devices is improved, the use of copper as a heat dissipation member is increasing due to its good thermal conductivity. The high thermal conductivity of copper, however, leads to difficulties in the joining process. Satisfactory bonding with copper is known to be difficult, especially if high shear and peel strengths are desired. The primary reason is that a copper oxide layer develops rapidly and is weakly attached to the base metal under typical conditions. Thus, when a clean copper substrate is bonded, the initial strength of the joint is high, but upon environmental exposure, an oxide layer may develop, which will reduce the durability of the joint. In this study, an epoxy adhesive formulation was investigated to improve the strength and reliability of a copper to copper joint. Epoxy hardeners such as anhydride, dihydrazide, and dicyandiamide and catalysts such as triphenylphosphine and imidazole were added to an epoxy resin mixture of DGEBA and DGEBF. Differential scanning calorimetry (DSC) analyses revealed that the curing temperatures were dependent on the type of hardener rather than on the catalyst, and higher heat of curing resulted in a higher Tg. The reliability of the copper joint against a high temperature and high humidity environment was found to be the lowest in the case of dihydrazide addition. This is attributed to its high water permeability, which led to the formation of a weak boundary layer of copper oxide. It was also found that dicyandiamide provided the highest initial joint strength and reliability while anhydride yielded intermediate performance between dicyandiamide and dihydrazide.
4,000원
9.
2011.05
구독 인증기관 무료, 개인회원 유료
Simultaneous Ni and C codeposition by electrolysis was investigated with the aim of obtaining better corrosionresistivity and surface conductivity of a metallic bipolar plate for application in fuel cells and redox flow batteries. The carboncontent in the Ni-C composite plate fell in a range of 9.2~26.2at.% as the amount of carbon in the Ni Watt bath and theroughness of the composite were increased. The Ni-C composite with more than 21.6at.% C content did not show uniformlydispersed carbon. It also displayed micro-sized defects such as cracks and crevices, which result in pitting or crevice corrosion.The corrosion resistance of the Ni-C composite in sulfuric acid is similar with that of pure Ni. Electrochemical test results suchas passivation were not satisfactory; however, the Ni-C composite still displayed less than 10−4A/cm2 passivation currentdensity. Passivation by an anodizing technique could yield better corrosion resistance in the Ni-C composite, approaching thatof pure Ni plating. Surface resistivity of pure Ni after passivation was increased by about 8% compared to pure Ni. On theother hand, the surface resistivity of the Ni-C composite with 13at.% C content was increased by only 1%. It can be confirmedthat the metal plate electrodeposited Ni-C composite can be applied as a bipolar plate for fuel cells and redox flow batteries.
4,000원
