Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such assensors and temperature compensation devices. NTC thermistor thick films of Ni1+xMn2-xO4+δ (x=0.05, 0, −0.05) werefabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T)characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between 25oC and 85oCwithout heat treatment. When the film was annealed at 600oC 1h, the resistivity of the film gradually decreased due tocrystallization and grain growth. The resistivity and the activation energy of films annealed at 600oC for 1 h were 5.203, 5.95,and 4.772KΩ·cm and 351, 326, and 299meV for Ni0.95Mn2.05O4+δ, NiMn2O4, and Ni1.05Mn1.95O4+δ, respectively. The annealingprocess induced insulating Mn2O3 in the Ni deficient Ni0.95Mn2.05O4+δ composition resulting in large resistivity and activationenergy. Meanwhile, excess Ni in Ni1.05Mn1.95O4+δ suppressed the abnormal grain growth and changed Mn3+ to Mn4+, givinglower resistivity and activation energy.