This research is carried out to analyze the effects of Styrene and PVP on the properties of silicone hydrogel lenses. Styrene group and PVP(Polyvinylpyrrolidone) are used as additives for a basic combination containing silicone monomer, TSMA(trimethylsilyl methacrylate) and DMA(n,n-dimethylacrylamide) added to the mix at ratios of 1~10 %. Silicone hydrogel lens is produced by cast-mold method. The polymerized lens sample is hydrated in a 0.9 % saline solution for 24 hours before its optical and physical characteristics are measured. Measurement of the physical characteristics of the produced material shows that the refractive index is 1.3682~1.4321, water content 77.11~45.73 %, visible light transmittance 95.14~88.20 %, and tensile strength 0.0652~0.3113 kgf. The results show a decrease of refractive index as the ratio of additives and water content decreases. The result of the stabilization test of polymerization show an increase of extractables along with increase of the ratio of additives, but the difference is not significant for all samples, so it can be judged that the stabilization of the polymer is maintained. Therefore, the additions of styrene and PVP should be taken into consideration for their effects on the physical properties of silicone hydrogel lens.
ZTO/n-Si thin film is produced to investigate tunneling phenomena by interface characteristics by the depletion layer. For diversity of the depletion layer, the thin film of ZTO is heat treated after deposition, and the gpolarization is found to change depending on the heat treatment temperature and capacitance. The higher the heat treatment temperature is, the higher the capacitance is, because more charges are formed, the highest at 150 °C. The capacitance decreases at 200 °C. ZTO heat treated at 150 °C shows tunneling phenomena, with low non-resistance and reduced charge concentration. When the carrier concentration is low and the resistance is low, the depletion layer has an increased potential barrier, which results in a tunneling phenomenon, which results in an increase in current. However, the ZTO thin film with high charge or high resistance shows a Schottky junction feature. The reason for the great capacitance increase is the increased current due to tunneling in the depletion layer.
Global fitting functions for Fe-selective chlorination in ilmenite(FeTiO2) and successive chlorination of beneficiated TiO2 are proposed and validated based on a comparison with experimental data collected from the literature. The Fe-selective chlorination reaction is expressed by the unreacted shrinking core model, which covers the diffusion-controlling step of chlorinated Fe gas that escapes through porous materials of beneficiated TiO2 formed by Fe-selective chlorination, and the chemical reaction-controlling step of the surface reaction of unreacted solid ilmenite. The fitting function is applied for both chemical controlling steps of the unreacted shrinking core model. The validation shows that our fitting function is quite effective to fit with experimental data by minimum and maximum values of determination coefficients of R2 as low as 0.9698 and 0.9988, respectively, for operating parameters such as temperature, Cl2 pressure, carbon ratio and particle size that change comprehensively. The global fitting functions proposed in this study are expressed simply as exponential functions of chlorination rate(X) vs. time(t), and each of them are validated by a single equation for various reaction conditions. There is therefore a certain practical merit for the optimal process design and performance analysis for field engineers of chlorination reactions of ilmenite and TiO2.
Generally, ceramic tiles for building construction are manufactured by dry forming process using granular powders prepared by spray drying process after mixing and grinding of mineral raw materials. In recent years, as the demand for large ceramic tiles with natural texture has increased, the development of granule powders with high packing ratio and excellent flowability has become more important. In this study, ceramic tile granule powders are coated with hydrophobically treated silica nanoparticles. The effects of hydrophobic silica coating on the flowability of granule powders and the strength of the green body are investigated in detail. Silica nanoparticles are hydrophobically treated with GPTMS(3-glycidoxypropyl trimethoxy silane), which is an epoxy-based silane coupling agent. As the coating concentration increases, the angle of repose and the compressibility decrease. The tap density and flowability index increase after silica coating treatment. These results indicate that hydrophobic treatment can improve the flowability of the granular powder, and prevent cracking of green body at high pressure molding.
Zinc oxide(ZnO) micro/nanocrystals are grown via thermal evaporation of ZnO powder mixed with Mn powder, which is used as a reducing agent. The ZnO/Mn powder mixture produces ZnO micro/nanocrystals with diverse morphologies such as rods, wires, belts, and spherical shapes. Rod-shaped ZnO micro/nanocrystals, which have an average diameter of 360 nm and an average length of about 12 μm, are fabricated at a temperature as low as 800 °C due to the reducibility of Mn. Wireand belt-like ZnO micro/nanocrystals with length of 3 μm are formed at 900 °C and 1,000 °C. When the growth temperature is 1,100 °C, spherical shaped ZnO crystals having a diameter of 150 nm are synthesized. X-ray diffraction patterns reveal that ZnO had hexagonal wurtzite crystal structure. A strong ultraviolet emission peak and a weak visible emission band are observed in the cathodoluminescence spectra of the rod- and wire-shaped ZnO crystals, while visible emission is detected for the spherical shaped ZnO crystals.
Green BaSi2O2N2:0.02Eu2+ phosphor is synthesized through a two-step solid state reaction method. The first firing is for crystallization, and the second firing is for reduction of Eu3+ into Eu2+ and growth of crystal grains. By thermal analysis, the three-time endothermic reaction is confirmed: pyrolysis reaction of BaCO3 at 900 oC and phase transitions at 1,300 oC and 1,400 oC. By structural analysis, it is confirmed that single phase [BaSi2O2N2] is obtained with Cmcm space group of orthorhombic structure. After the first firing the morphology is rod-like type and, after the second firing, the morphology becomes round. Our phosphor shows a green emission with a peak position of 495 nm and a peak width of 32 nm due to the 4f65d1→4f7 transition of Eu2+ ion. An LED package (chip size 5.6 x 3.0 mm) is fabricated with a mixture of our green BaSi2O2N2, and yellow Y3Al5O12 and red Sr2Si5N8 phosphors. The color rendering index (90) is higher than that of the mixture without our green phosphor (82), which indicates that this is an excellent green candidate for white LEDs with a deluxe color rendering index.
Thermal management is a critical issue for the development of high-performance electronic devices. In this paper, thermal conductivity values of mild steel and stainless steel(STS) are measured by light flash analysis(LFA) and dynamic thermal interface material(DynTIM) Tester. The shapes of samples for thermal property measurement are disc type with a diameter of 12.6 mm. For samples with different thickness, the thermal diffusivity and thermal conductivity are measured by LFA. For identical samples, the thermal resistance(Rth) and thermal conductivity are measured using a DynTIM Tester. The thermal conductivity of samples with different thicknesses, measured by LFA, show similar values in a range of 5 %. However, the thermal conductivity of samples measured by DynTIM Tester show widely scattered values according to the application of thermal grease. When we use the thermal grease to remove air gaps, the thermal conductivity of samples measured by DynTIM Tester is larger than that measured by LFA. But, when we did not use thermal grease, the thermal conductivity of samples measured by DynTIM Tester is smaller than that measured by LFA. For the DynTIM Tester results, we also find that the slope of the graph of thermal resistance vs. thickness is affected by the usage of thermal grease. From this, we are able to conclude that the wide scattering of thermal conductivity for samples measured with the DynTIM Tester is caused by the change of slope in the graph of thermal resistance-thickness.
The electromagnetic and thermal properties of a heavy fermion CeNi2Ge2 are investigated using first-principle methods with local density approximation (LDA) and fully relativistic approaches. The Ce f-bands are located near the Fermi energy EF and hybridized with the Ni-3d states. This hybridization plays important roles in the characteristics of this material. The fully relativistic approach shows that the 4f states split into 4f7/2 and 4f5/2 states due to spin-orbit coupling effects. It can be found that within the LDA calculation, the density of states near the Fermi level are mainly of Ce-derived 4f states. The Ni-derived 3d states have high peaks around -1.7eV and spreaded over wide range around the Fermi level. The calculated magnetic of CeNi2Ge2 with LDA method does not match with that of experimental result because of strong correlation interaction between electrons in f orbitals. The calculations show that the specific heat coefficient underestimates the experimental value by a factor of 19.1. The discrepancy between the band calculation and experiment for specific heat coefficient is attributed to the formation of a quasiparticle. Because of the volume contraction, the exchange interaction between the f states and the conduction electrons is large in CeNi2Ge2, which increases the quasiparticle mass. This will result in the enhancement of the specific hear coefficient.
ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and O2 mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and roomtemperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when O2 is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ± 3 V of the reverse and forward bias voltage is about 5.8 × 103, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.