ZTO/n-Si thin film is produced to investigate tunneling phenomena by interface characteristics by the depletion layer. For diversity of the depletion layer, the thin film of ZTO is heat treated after deposition, and the gpolarization is found to change depending on the heat treatment temperature and capacitance. The higher the heat treatment temperature is, the higher the capacitance is, because more charges are formed, the highest at 150 °C. The capacitance decreases at 200 °C. ZTO heat treated at 150 °C shows tunneling phenomena, with low non-resistance and reduced charge concentration. When the carrier concentration is low and the resistance is low, the depletion layer has an increased potential barrier, which results in a tunneling phenomenon, which results in an increase in current. However, the ZTO thin film with high charge or high resistance shows a Schottky junction feature. The reason for the great capacitance increase is the increased current due to tunneling in the depletion layer.

The transfer characteristics of zinc tin oxide(ZTO) on silicon dioxide(SiO2) thin film transistor generally depend on the electrical properties of gate insulators. SiO2 thin films are prepared with argon gas flow rates of 25 sccm and 30 sccm. The rate of ionization of SiO2(25 sccm) decreases more than that of SiO2(30 sccm), and then the generation of electrons decreases and the conductivity of SiO2(25 sccm) is low. Relatively, the conductivity of SiO2(30 sccm) increases because of the high rate of ionization of argon gases. Therefore, the insulating performance of SiO2(25 sccm) is superior to that of SiO2(30 sccm) because of the high potential barrier of SiO2(25 sccm). The ZTO/SiO2 transistors are prepared to research the CO2 gas sensitivity. The stability of the transistor of ZTO/SiO2(25 sccm) as a high insulator is superior owing to the high potential barrier. It is confirmed that the electrical properties of the insulator in transistor devices is an important factor to detect gases.

To observe the bonding structure and electrical characteristics of a GZO oxide semiconductor, GZO was deposited on ITO glasses and annealed at various temperatures. GZO was found to change from crystal to amorphous with increasing of the annealing temperatures; GZO annealed at 200 oC came to have an amorphous structure that depended on the decrement of the oxygen vacancies; increase the mobility due to the induction of diffusion currents occurred because of an increment of the depletion layer. The increasing of the annealing temperature caused a reduction of the carrier concentration and an increase of the bonding energy and the depletion layer; therefore, the large potential barrier increased the diffusion current dna the Hall mobility. However, annealing temperatures over 200 oC promoted crystallinity by the defects without oxygen vacancies, and then degraded the depletion layer, which became an Ohmic contact without a potential barrier. So the current increased because of the absence of a potential barrier.

To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.

To study the characteristics of ZTO, which is made using a target mixed ZnO:SnO2= 1:1, the ZnO and SnO2 were analyzed using PL, XRD patterns, and electrical properties. Resulting characteristics were compared with the electrical characteristics of ZnO, SnO2, and ZTO. The electrical characteristics of ZTO were found to improve with increasing of the annealing temperature due to the high degree of crystal structures at high temperature. The crystal structure of SnO2 was also found to increase with increasing temperatures. So, the structure of ZTO was found to be affected by the annealing temperature and the molecules of SnO2; the optical property of ZTO was similar to that of ZnO. Among the ZTO films, ZTO annealed at the highest temperature showed the highest capacitance and Schottky contact.

The contact mechanism of devices is usually researched at electrode contacts. However, the contact between a dielectric and channel at the MOS structure is more important. The graphene was used as a channel material, and the thin film transistor with MOS structure was prepared to observe the contact mechanism. The graphene was obtained on Cu foil by the thermal decomposition method with H2 and CH4 mixed gases at an ambient annealing temperature of 1000˚C during the deposition for 30 min, and was then transferred onto a SiO2/Si substrate. The graphene was doped in a nitrogen acidic solution. The chemical properties of graphene were investigated to research the effect of nitric atoms doping. The sheet resistance of graphene decreased after nitrogen acidic doping, and the sheet resistance decreased with an increase in the doping times because of the increment of negative charge carriers. The nitric-atom-doped graphene showed the Ohmic contact at the curve of the drain current and drain voltage, in spite of the Schottky contact of grapnene without doping.

To obtain the transistor with ambipolar transfer characteristics, IGZO/SiOC thin film transistor was prepared on SiOC with various polarities as a gate insulator. The interface between a channel and insulator showed the Ohmic and Schottky contacts in the bias field of -5V ~ +5V. These contact characteristics depended on the polarities of SiOC gate insulators. The transfer characteristics of TFTs were observed the Ohmic contact on SiOC with polarity, but Schottky contact on SiOC with low polarity. The IGZO/SiOC thin film transistor with a Schottky contact in a short range bias electric field exhibited ambipolar transfer characteristics, but that with Ohmic contact in a short range electric field showed unipolar characteristics by the trapping phenomenon due to the trapped ionized defect formation.

To observe the formation of defects at the interface between an oxide semiconductor and SiO2, ZnO was preparedon SiO2 with various oxygen gas flow rates by RF magnetron sputtering deposition. The crystallinity of ZnO depends on thecharacteristic of the surface of the substrate. The crystallinity of ZnO on a Si wafer increased due to the activation of ionicinteractions after an annealing process, whereas that of ZnO on SiO2 changed due to the various types of defects which hadformed as a result of the deposition conditions and the annealing process. To observe the chemical shift to understand of defectdeformations at the interface between the ZnO and SiO2, the O 1s electron spectra were convoluted into three sub-peaks bya Gaussian fitting. The O 1s electron spectra consisted of three peaks as metal oxygen (at 530.5eV), O2− ions in an oxygen-deficient region (at 531.66eV) and OH bonding (at 532.5eV). In view of the crystallinity from the peak (103) in the XRDpattern, the metal oxygen increased with a decrease in the crystallinity. However, the low FWHM (full width at half maximum)at the (103) plane caused by the high crystallinity depended on the increment of the oxygen vacancies at 531.66eV due tothe generation of O2− ions in the oxygen-deficient region formed by thermal activation energy.