간행물
한국재료학회지 KCI 등재 SCOPUS Korean Journal of Materials Research
- 발행기관 한국재료학회
- 자료유형 학술지
- 간기 월간
- ISSN 2799-8525 (Print)2799-8681 (Online)
- 수록기간 1991 ~ 2024
- 주제분류 공학 > 재료공학 공학 분류의 다른 간행물
- 십진분류KDC 530DDC 620
권호리스트/논문검색
제20권 제4호 (2010년 4월) 10건
1.
2010.04
구독 인증기관 무료, 개인회원 유료
Transparent conducting oxide (TCO) films are widely used for optoelectronic applications. Among TCO materials,zinc oxide (ZnO) has been studied extensively for its high optical transmission and electrical conduction. In this study, the effectsof O2 plasma pretreatment on the properties of Ga-doped ZnO films (GZO) on polyethylene naphthalate (PEN) substrate werestudied. The O2 plasma pretreatment process was used instead of conventional oxide buffer layers. The O2 plasma treatmentprocess has several merits compared with the oxide buffer layer treatment, especially on a mass production scale. In this process,an additional sputtering system for oxide composition is not needed and the plasma treatment process is easily adopted as anin-line process. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesionbetween the PEN substrate and the GZO film, the O2 plasma pre-treatment process was used prior to GZO sputtering. As theRF power and the treatment time increased, the contact angle decreased and the RMS surface roughness increased significantly.It is believed that the surface energy and adhesive force of the polymer surfaces increased with the O2 plasma treatment andthat the crystallinity and grain size of the GZO films increased. When the RF power was 100W and the treatment time was120 sec in the O2 plasma pretreatment process, the resistivity of the GZO films on the PEN substrate was 1.05×10-3Ω-cm,which is an appropriate range for most optoelectronic applications.
4,000원
2.
2010.04
구독 인증기관 무료, 개인회원 유료
Since it was developed by Joseph Aspdin, cement has been a common construction materials up to the present time.However, there are trace constituents in cement clinker. One of the trace constituents included in cement clinker, chromium,has become prominent and highly noticed lately as a social issue both inside and outside of this country because it affects thehuman body negatively. The aim of the present study was to investigate the concentration of water-soluble hexavalent chromiumin cement clinker by using industrial by-products. For that reason, raw materials were prepared to add different SiO2 , Al2O3,and Fe2O3 sources. After the raw materials such as the limestone, the sand and the clay, iron ore was pulverized and mixed,and the raw meal was burnt at about 1450oC in a furnace with an oxidizing atmosphere. The part in the raw materials of theclinker was substituted with slag, sludge, etc. and this was used to manufacturing cement clinker. To investigate the water-soluble hexavalent chromium content in clinker, raw meal was prepared by changing the modulus, the type, and the contentof clinker materials and tested concentrations of hexavalent chromium in the clinkers. To determine Cr+6 formation of theclinker, tests were done with raw meals adding chromium by using different industrial by-products. Consequently because thechromium was to be included in the raw materials of the clinker, production of Portland cement clinker was included with thechromium. Also, the chromium was converted into hexavalent chromium in the burning process.
4,000원
3.
2010.04
구독 인증기관 무료, 개인회원 유료
Chromium nitride (CrN) samples with two different layer structures (multilayer and single layer) were coated on bipolar plates of polymer electrolyte membrane fuel cells (PEMFC) using the reactive sputtering method. The effects with respect to layer structure on corrosion resistance and overall cell performance were investigated. A continuous and thin chromium nitride layer (Cr0.48 N0.52) was formed on the surface of the SUS 316L when the nitrogen flow rate was 10 sccm. The electrochemical stability of the coated layers was examined using the potentiodynamic and potentiostatic methods in the simulated corrosive circumstances of the PEMFC under 80˚C. Interfacial contact resistance (ICR) between the CrN coated sample and the gas diffusion layer was measured by using Wang's method. A single cell performance test was also conducted. The test results showed that CrN coated SUS316L with multilayer structure had excellent corrosion resistance compared to single layer structures and single cell performance results with 25 cm2 in effective area also showed the same tendency. The difference of the electrochemical properties between the single and multilayer samples was attributed to the Cr interlayer layer, which improved the corrosion resistance. Because the coating layer was damaged by pinholes, the Cr layer prevented the penetration of corrosive media into the substrate. Therefore, the CrN with a multilayer structure is an effective coating method to increase the corrosion resistance and to decrease the ICR for metallic bipolar plates in PEMFC.
4,000원
4.
2010.04
구독 인증기관 무료, 개인회원 유료
Cubic boron nitride (c-BN) is a promising material for use in many potential applications because of its outstanding physical properties such as high thermal stability, high abrasive wear resistance, and super hardness. Even though 316L austenitic stainless steel (STS) has poor wear resistance causing it to be toxic in the body due to wear and material chips, 316L STS has been used for implant biomaterials in orthopedics due to its good corrosion resistance and mechanical properties. Therefore, in the present study, c-BN films with a B4C layer were applied to a 316L STS specimen in order to improve its wear resistance. The deposition of the c-BN films was performed using an r.f. (13.56 MHz) magnetron sputtering system with a B4C target. The coating layers were characterized using XPS and SEM, and the mechanical properties were investigated using a nanoindenter. The friction coefficient of the c-BN coated 316L STS steel was obtained using a pin-on-disk according to the ASTM G163-99. The thickness of the obtained c-BN and B4C were about 220 nm and 630 nm, respectively. The high resolution XPS spectra analysis of B1s and N1s revealed that the c-BN film was mainly composed of sp3 BN bonds. The hardness and elastic modulus of the c-BN measured by the nanoindenter were 46.8 GPa and 345.7 GPa, respectively. The friction coefficient of the c-BN coated 316L STS was decreased from 3.5 to 1.6. The wear property of the c-BN coated 316L STS was enhanced by a factor of two.
4,000원
5.
2010.04
구독 인증기관 무료, 개인회원 유료
Hybridization of semiconductor materials with carbon nanotubes (CNTs) is a recent field of interest in which new nanodevice fabrication and applications are expected. In this work, nanowire type GaAs structures are synthesized on porous single-wall carbon nanotubes (SWCNTs) as templates using the molecular beam epitaxy (MBE) technique. The field emission properties of the as-synthesized products were investigated to suggest their potential applications as cold electron sources, as well. The SWCNT template was synthesized by the arc-discharge method. SWCNT samples were heat-treated at 400˚C under an N2/O2 atmosphere to remove amorphous carbon. After heat treatment, GaAs was grown on the SWCNT template. The growth conditions of the GaAs in the MBE system were set by changing the growth temperatures from 400˚C to 600˚C. The morphology of the GaAs synthesized on the SWCNTs strongly depends on the substrate temperature. Namely, nano-crystalline beads of GaAs are formed on the CNTs under 500˚C, while nanowire structures begin to form on the beads above 600˚C. The crystal qualities of GaAs and SWCNT were examined by X-ray diffraction and Raman spectra. The field emission properties of the synthesized GaAs nanowires were also investigated and a low turn-on field of 2.0 V/μm was achieved. But, the turn-on field was increased in the second and third measurements. It is thought that arsenic atoms were evaporated during the measurement of the field emission.
4,000원
6.
2010.04
구독 인증기관 무료, 개인회원 유료
Recent high efficiency electronic devices have been found to have heat emission problems. As for LEDs, an excessive increase in the device temperature causes a drop of the luminous efficiency and circuit lifetime. Therefore, heat release in the limited space of such electronic parts is very important. This is a study of the possibility of using a coating of carbon materials as a solution for the thermal emission problem of electronic devices. Powdered carbon materials, cokes, carbon blacks, amorphous graphite, and natural flakes were coated with an organic binder on an aluminum sheet and the subsequent thermal emissivity was measured with an FT-IR spectrometer and was found to be in the range of 5~20 μm at 50˚C. The emissivity of the carbon materials coated on the aluminum sheet was shown to be over 0.8 and varied according to carbon type. The maximum thermal emissivity on the carbon black coated-aluminum surface was shown to be 0.877. The emissivity of the anodized aluminum sheets that were used as heat releasing materials of the electronic parts was reported to be in the range of 0.7~0.8. Therefore, the use of a coating of carbon material can be a potential solution that facillitates heat dissipation for electronic parts.
4,000원
7.
2010.04
구독 인증기관 무료, 개인회원 유료
This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of 100μsec after H-termination and above 600μsec after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of 37.31 mA/cm2 and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-Voc with an elimination of series resistance.
4,000원
8.
2010.04
구독 인증기관 무료, 개인회원 유료
Effect of TaB2 Addition on the Oxidation Behaviors of ZrB2-SiC Based Ultra-High Temperature Ceramics
Zirconium diboride (ZrB2) and mixed diboride of (Zr0.7Ta0.3)B2 containing 30 vol.% silicon carbide (SiC) composites were prepared by hot-pressing at 1800˚C. XRD analysis identified the high crystalline metal diboride-SiC composites at 1800˚C. The TaB2 addition to ZrB2-SiC showed a slight peak shift to a higher angle of 2-theta of ZrB2, which confirmed the presence of a homogeneous solid solution. Elastic modulus, hardness and fracture toughness were slightly increased by addition of TaB2. A volatility diagram was calculated to understand the oxidation behavior. Oxidation behavior was investigated at 1500˚C under ambient and low oxygen partial pressure (pO2~10-8 Pa). In an ambient environment, the TaB2 addition to the ZrB2-SiC improved the oxidation resistance over entire range of evaluated temperatures by formation of a less porous oxide layer beneath the surface SiO2. Exposure of metal boride-SiC at low pO2 resulted in active oxidation of SiC due to the high vapor pressure of SiO (g), and, as a result, it produced a porous surface layer. The depth variations of the oxidized layer were measured by SEM. In the ZrB2-SiC composite, the thickness of the reaction layer linearly increased as a function of time and showed active oxidation kinetics. The TaB2 addition to the ZrB2-SiC composite showed improved oxidation resistance with slight deviation from the linearity in depth variation.
4,000원
9.
2010.04
구독 인증기관 무료, 개인회원 유료
Recently, one-dimensional semiconducting nanomaterials have attracted considerable interest for their potential as building blocks for fabricating various nanodevices. Among these semiconducting nanomaterials,, SnO2 nanostructures including nanowires, nanorods, nanobelts, and nanotubes were successfully synthesized and their electrochemical properties were evaluated. Although SnO2 nanowires and nanobelts exhibit fascinating gas sensing characteristics, there are still significant difficulties in using them for device applications. The crucial problem is the alignment of the nanowires. Each nanowire should be attached on each die using arduous e-beam or photolithography, which is quite an undesirable process in terms of mass production in the current semiconductor industry. In this study, a simple process for making sensitive SnO2 nanowire-based gas sensors by using a standard semiconducting fabrication process was studied. The nanowires were aligned in-situ during nanowire synthesis by thermal CVD process and a nanowire network structure between the electrodes was obtained. The SnO2 nanowire network was floated upon the Si substrate by separating an Au catalyst between the electrodes. As the electric current is transported along the networks of the nanowires, not along the surface layer on the substrate, the gas sensitivities could be maximized in this networked and floated structure. By varying the nanowire density and the distance between the electrodes, several types of nanowire network were fabricated. The NO2 gas sensitivity was 30~200 when the NO2 concentration was 5~20ppm. The response time was ca. 30~110 sec.
4,000원
10.
2010.04
구독 인증기관 무료, 개인회원 유료
In this paper, Fe-TiO2 and Fe-fullerene/TiO2 composite photocatalysts were prepared with titanium (IV) n-butoxide (TNB) by a sol-gel method. TiO2, Fe-TiO2 and Fe-fullerene/TiO2 were characterized by scanning electron microscopy (SEM), Transmission electron microscope (TEM), specific surface area (BET), X-ray diffraction analysis (XRD) and energy dispersive X-ray spectroscopy (EDX). The photocatalytic activities were evaluated by the photocatalytic oxidation of methylene blue (MB) solution. XRD patterns of the composites showed that the photocatalyst composite contained a typical single and clear anatase phase. The surface properties shown by SEM presented a characterization of the texture on Fe-fullerene/TiO2 composites and showed a homogenous composition in the particles for the titanium sources used. The EDX spectra for the elemental identification showed the presence of O, C and Ti elements. Moreover, peaks of the Fe element were observed in the Fe-TiO2 and Fe-fullerene/TiO2 composites. The degradation of MB solution by UV-light irradiation in the presence of photocatalyst compounds was investigated in complete darkness. The degradation of MB concentration in aqueous solution occurred via three kinds of physical phenomena: quantum efficiency of the fullerene; organo-metallic reaction of the Fe compound; and decomposition of TiO2. The degradation rate of the methylene blue solution increased when using Fe-fullerene/TiO2 compounds.
4,000원
