간행물
한국재료학회지 KCI 등재 SCOPUS Korean Journal of Materials Research
- 발행기관 한국재료학회
- 자료유형 학술지
- 간기 월간
- ISSN 2799-8525 (Print)2799-8681 (Online)
- 수록기간 1991 ~ 2024
- 주제분류 공학 > 재료공학 공학 분류의 다른 간행물
- 십진분류KDC 530DDC 620
권호리스트/논문검색
제30권 제10호 (2020년 10월) 10건
1.
2020.10
구독 인증기관 무료, 개인회원 유료
The various sintered samples comprising of 72 wt%(Al2O3) : 28 wt%(SiO2) based ceramics were fabricated using a colloidal processing route. The phase analysis of the ceramics was performed using an X-ray diffractometer (XRD) at room temperature confirming the presence of Al2O5Si and Al5.33Si0.67O9.33. The surface morphology of the fracture surface of the different sintered samples having different sizes of grain distribution. The resistive and capacitive properties of the three different sintered samples at frequency sweep (1 kHz to 1 MHz). The contribution of grain and the non-Debye relaxation process is seen for various sintered samples in the Nyquist plot. The ferroelectric loop of the various sintered sample shows a slim shape giving rise to low remnant polarization. The excitation performance of the sample at a constant electric signal has been examined utilizing a designed electrical circuit. The above result suggests that the prepared lead-free ceramic can act as a base for designing of dielectric capacitors or resonators.
4,000원
2.
2020.10
구독 인증기관 무료, 개인회원 유료
This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V2O5-MnO2- Nb2O5-Bi2O3-Co3O4-Dy2O3 (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/ cm3 due to the volatility of V2O5, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 oC exhibit a relatively low leakage current, less than 60 mA/cm2. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in ΔEB/EB and -0.7% in Δα/α after application of DC accelerated aging stress (0.85 EB/85 oC/24 h).
4,000원
3.
2020.10
구독 인증기관 무료, 개인회원 유료
The two key variables of an Si solar cell, i.e., emitter (n-type window layer) and base (p-type substrate) doping levels or concentrations, are studied using Medici, a 2-dimensional semiconductor device simulation tool. The substrate is ptype and 150 μm thick, the pn junction is 2 μm from the front surface, and the cell is lit on the front surface. The doping concentration ranges from 1 × 1010 cm−3 to 1 × 1020 cm−3 for both emitter and base, resulting in a matrix of 11 by 11 or a total of 121 data points. With respect to increasing donor concentration (Nd) in the emitter, the open-circuit voltage (Voc) is little affected throughout, and the short-circuit current (Isc) is affected only at a very high levels of Nd, exceeding 1 × 1019 cm−3, dropping abruptly by about 12%, i.e., from Isc = 6.05 × 10−9 A·μm−1, at Nd = 1 × 1019 cm−3 to Isc = 5.35 × 10−9 A·μm−1 at Nd = 1 × 1020 cm−3, likely due to minority-carrier, or hole, recombination at the very high doping level. With respect to increasing acceptor concentration (Na) in the base, Isc is little affected throughout, but Voc increases steadily, i.e, from Voc = 0.29 V at Na = 1 × 1012 cm−3 to 0.69 V at Na = 1 × 1018 cm−3. On average, with an order increase in Na, Voc increases by about 0.07 V, likely due to narrowing of the depletion layer and lowering of the carrier recombination at the pn junction. At the maximum output power (Pmax), a peak value of 3.25 × 10−2 W· cm−2 or 32.5 mW· cm−2 is observed at the doping combination of Nd = 1 × 1019 cm−3, a level at which Si is degenerate (being metal-like), and Na = 1 × 1017 cm−3, and minimum values of near zero are observed at very low levels of Nd ≤ 1 × 1013 cm−3. This wide variation in Pmax, even within a given kind of solar cell, indicates that selecting an optimal combination of donor and acceptor doping concentrations is likely most important in solar cell engineering.
4,000원
4.
2020.10
구독 인증기관 무료, 개인회원 유료
Organic-inorganic hybrid perovskite nanocrystals have attracted a lot of attention owing to their excellent optical properties such as high absorption coefficient, high diffusion length, and photoluminescence quantum yield in optoelectronic applications. Despite the many advantages of optoelectronic materials, understanding on how these materials interact with their environments is still lacking. In this study, the fluorescence properties of methylammonium lead bromide (CH3NH3PbBr3, MAPbBr3) nanoparticles are investigated for the detection of volatile organic compounds (VOCs) and aliphatic amines (monoethylamine, diethylamine, and trimethylamine). In particular, colloidal MAPbBr3 nanoparticles demonstrate a high selectivity in response to diethylamine, in which a significant photoluminescence (PL) quenching (~ 100%) is observed at a concentration of 100 ppm. This selectivity to the aliphatic amines may originate from the relative size of the amine molecules that must be accommodated in the perovskite crystals structure with a narrow range of tolerance factor. Sensitive PL response of MAPbBr3 nanocrystals suggests a simple and effective strategy for colorimetric and fluorescence sensing of aliphatic amines in organic solution phase.
4,000원
5.
2020.10
구독 인증기관 무료, 개인회원 유료
Conductive polymer composites with high electrical and mechanical properties are in demand for bipolar plates of phosphoric acid fuel cells (PAFC). In this study, composites based on natural graphite/fluorinated ethylene propylene (FEP) and different ratios of carbon black are mixed and hot formed into bars. The overall content of natural graphite is replaced by carbon black (0.2 wt% to 3.0 wt%). It is found that the addition of carbon black reduces electrical resistivity and density. The density of composite materials added with carbon black 3.0 wt% is 2.168 g/cm3, which is 0.017 g/cm3 less than that of non-additive composites. In-plane electrical resistivity is 7.68 μΩm and through-plane electrical resistivity is 27.66 μΩm. Compared with non-additive composites, in-plane electrical resistivity decreases by 95.7 % and through-plane decreases by 95.9 %. Also, the bending strength is about 30 % improved when carbon black is added at 2.0 wt% compared to non-additive cases. The decrease of electrical resistivity of composites is estimated to stem from the carbon black, which is a conductive material located between melted FEP and acts a path for electrons; the increasing mechanical properties are estimated to result from carbon black filling up pores in the composites.
4,200원
6.
2020.10
구독 인증기관 무료, 개인회원 유료
UO2 kernels, a key component of fuel elements for high temperature gas cooled reactors, have usually been prepared by sol-gel methods. Sol-gel processes have a number of advantages, such as simple processes and facilities, and higher sphericity and density. In this study, to produce 900 μm-sized UO2 particles using an external gelation process, contact length extension of the NH3 gas of the broth droplets pass and the improvement of the gelation device capable of spraying 14 MNH4OH solution are used to form 3,000 μm-sized liquid droplets. To produce high-sphericity and high-density UO2 particles, HMTA, which promotes the gelation reaction in the uranium broth solution, is added to diffuse ammonium ions from the outside of the gelation solution during the aging process and generate ammonium ions from the inside of the ADU gel particles. Sufficient gelation inside of ADU gel particles is achieved, and the density of the UO2 spheres that undergo the subsequent treatment is 10.78 g/cm3; the sphericity is analyzed and found to be 0.948, indicating good experimental results.
4,000원
7.
2020.10
구독 인증기관 무료, 개인회원 유료
Effects of Sc addition on microstructure, electrical conductivity, thermal conductivity and mechanical properties of the as-cast and as-extruded Al-2Zn-1Cu-0.3Mg-xSc (x = 0, 0.25, 0.5 wt%) alloys are investigated. The average grain size of the as-cast Al-2Zn-1Cu-0.3Mg alloy is 2,334 μm; however, this value drops to 914 and 529 μm with addition of Sc element at 0.25 wt% and 0.5 wt%, respectively. This grain refinement is due to primary Al3Sc phase forming during solidification. The as-extruded Al-2Zn-1Cu-0.3Mg alloy has a recrystallization structure consisting of almost equiaxed grains. However, the asextruded Sc-containing alloys consist of grains that are extremely elongated in the extrusion direction. In addition, it is found that the proportion of low-angle grain boundaries below 15 degree is dominant. This is because the addition of Sc results in the formation of coherent and nano-scale Al3Sc phases during hot extrusion, inhibiting the process of recrystallization and improving the strength by pinning of dislocations and the formation of subgrain boundaries. The maximum values of the yield and tensile strength are 126 MPa and 215 MPa for the as-extruded Al-2Zn-1Cu-0.3Mg-0.25Sc alloy, respectively. The increase in strength is probably due to the existence of nano-scale Al3Sc precipitates and dense Al2Cu phases. Thermal conductivity of the as-cast Al-2Zn-1Cu-0.3Mg-xSc alloy is reduced to 204, 187 and 183 W/MK by additions of elemental Sc of 0, 0.25 and 0.5 wt%, respectively. On the other hand, the thermal conductivity of the as-extruded Al-2Zn-1Cu-0.3Mg-xSc alloy is about 200 W/Mk regardless of the content of Sc. This is because of the formation of coherent Al3Sc phase, which decreases Sc content and causes extremely high electrical resistivity.
4,000원
8.
2020.10
구독 인증기관 무료, 개인회원 유료
Used in the ceramic tile market as a representative building material, relief ceramic tile is showing increased demand recently. Since ceramic tiles are manufactured through a sintering process at over 1,000 oC after uniaxial compression molding by loading granule powders into a mold, it is very important to secure the flowability of granular powders in a mold having a relief pattern. In this study, kaolin, silica, and feldspar are used as starting materials to prepare granule powders by a spray dryer process; the surface of the granule powders is subject to hydrophobic treatment with various concentrations of stearic acid. The effect on the flowability of the granular powder according to the change of stearic acid concentration is confirmed by measuring the angle of repose, tap density, and compressibility, and the occurrence of cracks in the green body produced in the mold with the relief pattern is observed. Then, the green body is sintered by a fast firing process, and the water absorption, flexural strength, and durability are evaluated. The surface treatment of the granule powders with stearic acid improves the flowability of the granule powders, leading to a dense microstructure of the sintered body. Finally, the hydrophobic treatment of the granule powders makes it possible to manufacture relief ceramic tiles having a flexural strength of 292 N/cm, a water absorption of 0.91 %, and excellent mechanical durability
4,000원
9.
2020.10
구독 인증기관 무료, 개인회원 유료
AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al3+ ions of relatively small ion radius are substituted for Zn2+ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al2p and Oll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 1019 cm−3 of carrier concentration, 8.4 cm−2/V·s of mobility and 1.2 × 10−2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.
4,000원
10.
2020.10
구독 인증기관 무료, 개인회원 유료
In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm−2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.
4,000원
