간행물
한국재료학회지 KCI 등재 SCOPUS Korean Journal of Materials Research
- 발행기관 한국재료학회
- 자료유형 학술지
- 간기 월간
- ISSN 2799-8525 (Print)2799-8681 (Online)
- 수록기간 1991 ~ 2024
- 주제분류 공학 > 재료공학 공학 분류의 다른 간행물
- 십진분류KDC 530DDC 620
권호리스트/논문검색
제20권 제11호 (2010년 11월) 11건
1.
2010.11
구독 인증기관 무료, 개인회원 유료
The liquid-phase sintering method was used to prepare a glass lens forming core composed of SiC-Al2O3-Y2O3. Spark plasma sintering was used to obtain dense sintered bodies. The sintering characteristics of different SiC sources and compositions of additives were studied. Results revealed that, owing to its initial larger surface area, α-SiC offers sinterability that is superior to that of β-SiC. A maximum density of 3.32 g/cm3 (theoretical density [TD] of 99.7%) was obtained in α-SiC-10 wt% (6Al2O3-4Y2O3) sintered at 1850˚C without high-energy ball milling. The maximum hardness and compression stress of the sintered body reached 2870 Hv and 1110 MPa, respectively. The optimum ultra-precision machining parameters were a grinding speed of 1243 m/min, work spindle rotation rate of 100 rpm, feed rate of 0.5 mm/min, and depth of cut of 0.2 μm. The surface roughnesses of the thus prepared final products were Ra = 4.3 nm and Rt = 55.3 nm for the aspheric lens forming core and Ra = 4.4 nm and Rt = 41.9 for the spherical lens forming core. These values were found to be sufficiently low, and the cores showed good compatibility between SiC and the diamond-like carbon (DLC) coating material. Thus, these glass lens forming cores have great potential for application in the lens industry.
4,200원
2.
2010.11
구독 인증기관 무료, 개인회원 유료
A diamond-like carbon (DLC) film deposited on a WC disk was investigated to improve disk wear resistance for injection molding of zirconia optical ferrule. The deposition of DLC films was performed using the filtered vacuum arc ion plating (FV-AIP) system with a graphite target. The coating processing was controlled with different deposition times and the other conditions for coating, such as input power, working pressure, substrate temperature, gas flow, and bias voltage, were fixed. The coating layers of DLC were characterized using FE-SEM, AFM, and Raman spectrometry; the mechanical properties were investigated with a scratch tester and a nano-indenter. The friction coefficient of the DLC coated on the WC was obtained using a pin-on-disk, according to the ASTM G163-99. The thickness of DLC films coated for 20 min. and 60 min. was about 750 nm and 300 nm, respectively. The surface roughness of DLC films coated for 60 min. was 5.9 nm. The Raman spectrum revealed that the G peak of DLC film was composed of sp3 amorphous carbon bonds. The critical load (Lc) of DLC film obtained with the scratch tester was 14.6 N. The hardness and elastic modulus of DLC measured with the nano-indenter were 36.9 GPa and 585.5 GPa, respectively. The friction coefficient of DLC coated on WC decreased from 0.2 to 0.01. The wear property of DLC coated on WC was enhanced by a factor of 20.
4,000원
3.
2010.11
구독 인증기관 무료, 개인회원 유료
The microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of 0.1mol%Na2Ti6O13doped 0.94BaTiO3-0.06(Bi0.5Na0.5)TiO3 (BBNT-NT001) ceramics sintered at various temperatures from 1200oC to 1350oC wereinvestigated in order to develop eco-friendly PTCR thermistors with a high Curie temperature (TC). Resulting thermistors showeda perovskite structure with a tetragonal symmetry. When sintered at 1200oC, the specimen had a uniform microstructure withsmall grains. However, abnormally grown grains started to appear at 1250oC and a homogeneous microstructure with large grainswas exhibited when the sintering temperature reached 1325oC. When the temperature exceeded 1325oC, the grain growth wasinhibited due to the numerous nucleation sites generated at the extremely high temperature. It is considered that Na2Ti6O13 isresponsible for the grain growth of the 0.94BaTiO3-0.06(Bi0.5Na0.5)TiO3 ceramics by forming a liquid phase during the sinteringat around 1300oC. The grain growth of the BBNT-NT001 ceramics was significantly correlated with a decrease of resistivity.All the specimens were observed to have PTCR characteristics except for the sample sintered at 1200oC. The BBNT-NT001ceramics had significantly decreased ñrt and increased resistivity jump with increasing sintering temperature at from 1200oC to1325oC. Especially, the BBNT-NT001 ceramics sintered at 1325oC exhibited superior PTCR characteristics of low resistivityat room temperature (122Ω·cm), high resistivity jump (1.28×104), high resistivity temperature factor (20.4%/oC), and a highTc of 157.9oC.
4,000원
4.
2010.11
구독 인증기관 무료, 개인회원 유료
High strength sheet steels for automobile are seriously compromised by hydrogen embrittlement. This issue has been continuously studied, but the field of interest, which lies between microstructural characteristics and hydrogen behavior with hydrogen charging, has not yet been thoroughly investigated. This study was done to investigate the behavior of hydrogen according to the hydrogen volume fraction on 590MPa grade DP steels, which are developed under hydrogen charging conditions as high strength sheet steels for automobiles. The penetration depths and the mechanical properties, according to charging conditions, were investigated through the distribution of micro-hardness and the microstructural observation of the subsurface zone. It was found that the amount of hydrogen trapping in 590MPa DP steels was related to the austenite volume fraction. It was confirmed that the distribution of micro-hardnesses according to the depth of the subsurface zone under the free surface showed the relationship of the depth of the hydrogen saturation between the charging conditions.
4,000원
5.
2010.11
구독 인증기관 무료, 개인회원 유료
Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources.The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use ofmaterials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorptionof incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap.Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the 1st and 2nd generation solarcells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using anSi quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an SiOx matrix system was investigatedand analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QDSLS) were prepared by alternating deposition of Si rich oxide (SRO; SiOx (x=0.8, 1.12)) and SiO2 layers using RF magnetronco-sputtering and subsequent annealing at temperatures between 800 and 1,100oC under nitrogen ambient. Annealing temperaturesand times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-rayphotoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at 1,100oC for onehour. Transmission electron microscopy (TEM) images clearly showed SRO/SiO2 SLS and Si QDs formation in each 4, 6, and8nm SRO layer after annealing at 1,100oC for two hours. The systematic investigation of precipitation behavior of Si QDsin SiO2 matrices is presented.
4,000원
6.
2010.11
구독 인증기관 무료, 개인회원 유료
A porous nickel-tin nano-dendritic electrode, for use as the anode in a rechargeable lithium battery, has been prepared by using an electrochemical deposition process. The adjustment of the complexing agent content in the deposition bath enabled the nickel-tin alloys to have specific stoichiometries while the amount of acid, as a dynamic template for micro-porous structure, was limited to a certain amount to prevent its undesirable side reaction with the complexing agent. The ratios of nickel to tin in the electro-deposits were nearly identical to the ratios of nickel ion to tin ion in the deposition bath; the particle changed from spherical to dendritic shape according to the tin content in the deposits. The nickel to tin ratio and the dendritic structure were quite uniform throughout the thickness of the deposits. The resulting nickel-tin alloy was reversibly lithiated and delithiated as an anode in rechargeable lithium battery. Furthermore, the resulting anode showed much more stable cycling performance up to 50 cycles, as compared to that resulting from dense electro-deposit with the same atomic composition and from tin electrodeposit with a similar porous structure. From the results, it is expected that highly-porous nickel-tin alloys presented in this work could provide a promising option for the high performance anode materials for rechargeable lithium batteries.
4,000원
7.
2010.11
구독 인증기관 무료, 개인회원 유료
In order to meet the requirements of faster speed and higher packing density for devices in the field ofsemiconductor manufacturing, the development of Cu/Low k device material is explored for use in multi-layer interconnection.SiOC(-H) thin films containing alkylgroup are considered the most promising among all the other low k candidate materialsfor Cu interconnection, which materials are intended to replace conventional Al wiring. Their promising character is due to theirthermal and mechanical properties, which are superior to those of organic materials such as porous SiO2, SiOF, polyimides,and poly (arylene ether). SiOC(-H) thin films containing alkylgroup are generally prepared by PECVD method usingtrimethoxysilane as precursor. Nano voids in the film originating from the sterichindrance of alkylgroup lower the dielectricconstant of the film. In this study, methyltriphenylsilane containing bulky substitute was prepared and characterized by usingNMR, single-crystal X-ray, GC-MS, GPC, FT-IR and TGA analyses. Solid-state NMR is utilized to investigate the insolublesamples and the chemical shift of 29Si. X-ray single crystal results confirm that methyltriphenylsilane is composed of one Simolecule, three phenyl rings and one methyl molecule. When methyltriphenylsilane decomposes, it produces radicals such asphenyl, diphenyl, phenylsilane, diphenylsilane, triphenylsilane, etc. From the analytical data, methyltriphenylsilane was found tobe very efficient as a CVD or PECVD precursor.
4,000원
8.
2010.11
구독 인증기관 무료, 개인회원 유료
Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and Si3N4 layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the 840 cm-1 peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the 1100 cm-1 peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-N4 bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at 1100˚C for at least one hour is necessary to precipitate the silicon quantum dots in the SiNx matrix.
4,000원
9.
2010.11
구독 인증기관 무료, 개인회원 유료
A cobalt oxide - tin oxide nanocomposite based gas sensor on an SiO2 substrate was fabricated. Granular thin film of tin oxide was formed by a rheotaxial growth and thermal oxidation method using dc magnetron sputtering of Sn. Nano particles of cobalt oxide were spin-coated on the tin oxide. The cobalt oxide nanoparticles were synthesized by polymer-assisted deposition method, which is a simple cost-effective versatile synthesis method for various metal oxides. The thickness of the film can be controlled over a wide range of thicknesses. The composite structures thus formed were characterized in terms of morphology and gas sensing properties for reduction gas of H2. The composites showed a highest response of 240% at 250˚C upon exposure to 4% H2. This response is higher than those observed in pure SnO2 (90%) and Co3O4 (70%) thin films. The improved response with the composite structure may be related to the additional formation of electrically active defects at the interfaces. The composite sensor shows a very fast response and good reproducibility.
4,000원
10.
2010.11
구독 인증기관 무료, 개인회원 유료
We have studied methods to save Si source during the fabrication process of crystalline Si solar cells. One way is to use a thin silicon wafer substrate. As the thickness of the wafers is reduced, mechanical fractures of the substrate increase with the mechanical handling of the thin wafers. It is expected that the mechanical fractures lead to a dropping of yield in the solar cell process. In this study, the mechanical properties of 220-micrometer-solar grade Cz p-type monocrystalline Si wafers were investigated by varying saw-damage etching conditions in order to improve the flexural strength of ultra-thin monocrystalline Si solar cells. Potassium hydroxide (KOH) solution and tetramethyl ammonium hydroxide (TMAH) solution were used as etching solutions. Etching processes were operated with a varying of the ratio of KOH and TMAH solutions in different temperature conditions. After saw-damage etching, wafers were cleaned with a modified RCA cleaning method for ten minutes. Each sample was divided into 42 pieces using an automatic dicing saw machine. The surface morphologies were investigated by scanning electron microscopy and 3D optical microscopy. The thickness distribution was measured by micrometer. The strength distribution was measured with a 4-point-bending tester. As a result, TMAH solution at 90˚C showed the best performance for flexural strength.
4,000원
11.
2010.11
구독 인증기관 무료, 개인회원 유료
Semiconducting metal oxides have been frequently used as gas sensing materials. While zinc oxide is a popular material for such applications, structures such as nanowires, nanorods and nanotubes, due to their large surface area, are natural candidates for use as gas sensors of higher sensitivity. The compound ZnO has been studied, due to its chemical and thermal stability, for use as an n-type semiconducting gas sensor. ZnO has a large exciton binding energy and a large bandgap energy at room temperature. Also, ZnO is sensitive to toxic and combustible gases. The NO gas properties of zinc oxide-single wall carbon nanotube (ZnO-SWCNT) composites were investigated. Fabrication includes the deposition of porous SWCNTs on thermally oxidized SiO2 substrates followed by sputter deposition of Zn and thermal oxidation at 400˚C in oxygen. The Zn films were controlled to 50 nm thicknesses. The effects of microstructure and gas sensing properties were studied for process optimization through comparison of ZnO-SWCNT composites with ZnO film. The basic sensor response behavior to 10 ppm NO gas were checked at different operation temperatures in the range of 150-300˚C. The highest sensor responses were observed at 300˚C in ZnO film and 250˚C in ZnO-SWCNT composites. The ZnO-SWCNT composite sensor showed a sensor response (~1300%) five times higher than that of pure ZnO thin film sensors at an operation temperature of 250˚C.
4,000원
