본 논문에서는 전산점근해석기법을 사용하여 복합재료 보에 대한 경계층 해를 계산하고, ANSYS 결과와 비교 검증하였다. 경계층 해는 내부해와 순수 경계층 효과의 합으로 표현되기 때문에, 내부 및 경계층에 대한 수학적으로 엄밀한 정식화를 요구한다. 전산점근 해석기법은 수학적으로 매우 강력한 기법으로, 이러한 문제에 유용하다. 그러나 경계층과 내부 해들의 연결을 시키기 쉽지 않은데, 본 연구에서는 가상일의 원리를 통해 생브낭의 원리와 내부 및 경계층 문제를 체계적으로 분리하였다. 경계층 해는 팝코비치-패들 고유 벡터를 계산하여, 실수부와 허수부 벡터들의 선형 조합으로 표현하고, 내부 해의 워핑 함수들을 보상할 수 있도록 최소오차 자승법을 적용하였다. 계산된 해들은 2차원 유한요소 해석 결과와 비교하여 정성적일 뿐만 아니라 정량적으로도 잘 일치하는 결과를 얻었다.

The Cu2ZnSnS4 (CZTS) thin film solar cell is a candidate next generation thin film solar cell. For the application of an absorption layer in solar cells, CZTS thin films were deposited by pulsed laser deposition (PLD) at substrate temperature of 300˚C without post annealing process. Deposition time was carefully adjusted as the main experimental variable. Regardless of deposition time, single phase CZTS thin films are obtained with no existence of secondary phases. Irregularly-shaped grains are densely formed on the surface of CZTS thin films. With increasing deposition time, the grain size increases and the thickness of the CZTS thin films increases from 0.16 to 1μm. The variation of the surface morphology and thickness of the CZTS thin films depends on the deposition time. The stoichiometry of all CZTS thin films shows a Cu-rich and S-poor state. Sn content gradually increases as deposition time increases. Secondary ion mass spectrometry was carried out to evaluate the elemental depth distribution in CZTS thin films. The optimal deposition time to grow CZTS thin films is 150 min. In this study, we show the effect of deposition time on the structural properties of CZTS thin film deposited on soda lime glass (SLG) substrate using PLD. We present a comprehensive evaluation of CZTS thin films.

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An SiO2 diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and<100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and Si3N4 layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the 840 cm-1 peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the 1100 cm-1 peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-N4 bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at 1100˚C for at least one hour is necessary to precipitate the silicon quantum dots in the SiNx matrix.

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources.The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use ofmaterials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorptionof incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap.Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the 1st and 2nd generation solarcells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using anSi quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an SiOx matrix system was investigatedand analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QDSLS) were prepared by alternating deposition of Si rich oxide (SRO; SiOx (x=0.8, 1.12)) and SiO2 layers using RF magnetronco-sputtering and subsequent annealing at temperatures between 800 and 1,100oC under nitrogen ambient. Annealing temperaturesand times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-rayphotoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at 1,100oC for onehour. Transmission electron microscopy (TEM) images clearly showed SRO/SiO2 SLS and Si QDs formation in each 4, 6, and8nm SRO layer after annealing at 1,100oC for two hours. The systematic investigation of precipitation behavior of Si QDsin SiO2 matrices is presented.

Elongated CdSe nanoparticles with a diameter of 3-7nm have been successfully synthesized using two surfactants of trioctylphospine (TOP) and hexadecylamine (HDA) at . The formation of elongated CdSe nanoparticles is possibly due to the cooperative effects from both the different binding capability of two surfactants (TOP and HDA) and intrinsically anisotropic crystal structure of the CdSe. The electron diffraction pattern of CdSe nanoparticles revealed the formation of wurzite phase. The CdSe samples showed red-shifted wavelength from 560 to 580nm with increasing the refluxing time due to the gradual growth of CdSe nanoparticles. The relatively broad absorption band can be attributed to the surface state of CdSe nanoparticles. The possible formation mechanism of elongated CdSe nanoparticles was proposed and the characteristics of CdSe have been discussed as well.

[ SF6 ] gas has been widely used as an insulating, cleaning and covering gas due to its outstanding insulating feature and because of its inert properties. However, the global warming potential of SF6 gas is extremely high relative to typical global warming gases such as CO2, CFCs, and CH4. For these reasons, it is necessary to separate and collect waste SF6 gas. In this study, the effects of a surfactant (Tween) on the formation rate of SF6 gas hydrates were investigated. The SF6 gas hydrate formation rate increased with the addition of Tween and showed a nearly 6.5 times faster hydrate formation rate with an addition of 0.2 wt.% Tween compared to an addition of pure water. This is believed to be due to the increased solubility of SF6 gas with the addition of the surfactant. It was also found that SF6 gas hydrate in the surfactant solution showed two-stage hydrate formation rates with a formation rate that increased rapidly in the 2nd stage.

본 연구는 2011년 1월 1일부터 12월 31일까지 주요 언론에서 다룬 독도에 관한 기사들을 바탕으로 언론분야에 있어서 독도문제의 보도현황을 분석하고 앞으로 개선하고 발전시 켜야 할 과제들을 이끌어 내고자 시도하였으며, 구체적으로 우리나라 주요 언론기관들의 독도관련 기사들을 보도 분야별, 보도유형별, 프레임 유형별로 현황을 파악한 후, 언론이 정책행위자인 정부와 정책평가자인 독자들에서 어떤 역할을 감당하고 있는지 분석하고 있다. 독도관련주제에 관한 보도들은 처음의 제한적인 상황에서, 국민정서에 편승하는 방향으로 선회되었다가, 오히려 오늘날에는 국민정서를 부추기어 정치적 인기를 만회하려는 선까지 진행되고 있는 상황이다. 언론은 정권이 영토문제를 실정을 가리는데 활용하고 싶은 유혹으로부터, 국민이 독도문제로 인하여 군중심리에 묻여버리고 싶은 유혹으로부터 과감 히 돌아설 수 있도록 종용해야 하며, 문제의 본질을 짚어주고, 때마다 발생하는 사건 · 사고 에 일희일비하지 않도록 장기적 안목과 포용의 메시지를 전달해 주어야 한다. 언론은 각 정권이 독도문제를 정치적 이용보다 국가 장래에 도움이 되도록 정책으로 반영하고, 국민들이 독도에 대한 자부심을 갖고 각자의 일상에 매진하도록 배려하는데 시금석이 되어 주어야 하겠다.

This study aims to produce fundamental database for Environment Impact Assessment by monitoring vertical structure of the atmosphere due to the mountain valley wind in spring season. For this, we observed surface and upper meteorological elements in Sangin-dong, Daegu using the rawinsonde and automatic weather system(AWS). In Sangin-dong, the weather condition was largely affected by mountains when compared to city center. The air temperature was low during the night time and day break, and similar to that of city center during the day time. Relative humidity also showed similar trend; high during the night time and day break and similar to that of city center during the day time. Solar radiation was higher than the city, and the daily maximum temperature was observed later than the city. The synoptic wind during the measurement period was west wind. But during the day time, the west wind was joined by the prevailing wind to become stronger than the night time. During the night time and daybreak, the impact of mountain wind lowered the overall temperature, showing strong geographical influence. The vertical structure of the atmosphere in Dalbi valley, Sangin-dong had a sharp change in air temperature, relative humidity, potential temperature and equivalent potential temperature when measured at the upper part of the mixing layer height. The mixing depth was formed at maximum 1896m above the ground, and in the night time, the inversion layer was formed by radiational cooling and cold mountain wind.