Lindera glauca Blume has been used in Korean traditional medicine to treat the symptoms of paralysis, abdominal pain, speech disorders, extravasations, contusions, and pain caused by rheumatoid arthritis. We investigated the effect of L. glauca Blume extracts on the proliferation of colorectal cancer cells in vitro using HCT116 human colorectal cancer cell lines. We also investigated its mechanism of action. For this purpose, we used the MTT assay, western blotting, DNA fragmentation analysis, and flow cytometry. HCT116 cells were cultured in several concentrations of ethanol extracts of L. glauca Blume root (0, 50, 100 μg/mL). In this study, colon cancer cell growth was inhibited by L. glauca Blume root extract in a dose-dependent manner. It was associated with induction of apoptosis as assessed by nuclear fragmentation and cell cycle analysis. Apoptosis was assessed using western blotting for TNF-α, IL-6, NF-κB, Caspase-3, PARP, Bax, Bcl-2, and SIRT1. The extract also dose-dependently upregulated the expression Bax, the pro-apoptotic gene and downregulated the expression of the anti-apoptotic gene Bcl-2. Furthermore, the extract enhanced Caspase-3 activity in a dose-dependent manner. Our findings provide evidence that L. glauca Blume extract may mediate its anti-proliferative effect via the modulation of apoptosis.

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and Si3N4 layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the 840 cm-1 peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the 1100 cm-1 peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-N4 bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at 1100˚C for at least one hour is necessary to precipitate the silicon quantum dots in the SiNx matrix.

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources.The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use ofmaterials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorptionof incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap.Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the 1st and 2nd generation solarcells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using anSi quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an SiOx matrix system was investigatedand analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QDSLS) were prepared by alternating deposition of Si rich oxide (SRO; SiOx (x=0.8, 1.12)) and SiO2 layers using RF magnetronco-sputtering and subsequent annealing at temperatures between 800 and 1,100oC under nitrogen ambient. Annealing temperaturesand times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-rayphotoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at 1,100oC for onehour. Transmission electron microscopy (TEM) images clearly showed SRO/SiO2 SLS and Si QDs formation in each 4, 6, and8nm SRO layer after annealing at 1,100oC for two hours. The systematic investigation of precipitation behavior of Si QDsin SiO2 matrices is presented.