One of the issues currently facing nuclear power plants is how to store spent nuclear waste materials which are contaminated with radionuclides such as 134Cs, 135Cs, and 137Cs. Bioremediation processes may offer a potent method of cleaning up radioactive cesium. However, there have only been limited reports on Cs+ tolerant bacteria. In this study, we report the isolation and identification of Cs+ tolerant bacteria in environmental soil and sediment. The resistant Cs+ isolates were screened from enrichment cultures in R2A medium supplemented with 100 mM CsCl for 72 h, followed by microbial community analysis based on sequencing analysis from 16S rRNA gene clone libraries (NCBI’s BlastN). The dominant Bacillus anthracis Roh-1 and B. cereus Roh-2 were successfully isolated from the cesium enrichment culture. Importantly, B. cereus Roh- 2 is resistant to 30% more Cs+ than is B. anthracis Roh-1 when treated with 50 mM CsCl. Growth experiments clearly demonstrated that the isolate had a higher tolerance to Cs+. In addition, we investigated the adsorption of 0.2 mg L-1 Cs+ using B. anthracis Roh-1. The maximum Cs+ biosorption capacity of B. anthracis Roh-1 was 2.01 mg g-1 at pH 10. Thus, we show that Cs+ tolerant bacterial isolates could be used for bioremediation of contaminated environments.

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-SiO2 nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.