Effect of Cu and powder mixing with Cu-free (Nd, Dy)-Fe-B jet-milled powder on the magnetic properties of sintered magnets was investigated. The coercivity of a magnet prepared from the Cu-free (Nd, Dy)-Fe-B powder was about 10 kOe even though the alloy powder already contained some Dy (3.5 wt%). When small copper powder was blended, however, the coercivity of the magnet increased almost 100%, exhibiting about 20 kOe. On the contrary, the coercivity enhancement was moderate, about 4 kOe, when dysprosium content in the sintered magnet was simply increased to 4.9 wt% by the addition of small 3 powder.

In order to increase the coercivity of (Nd, Dy)-Fe-B sintered magnets without much reduction of remanence, small amount of Dy compounds such as and was mixed with (Nd, Dy)-Fe-B powder. After mixing, the coercivity of (Nd, Dy)-Fe-B sintered magnets apparently increased with the increase of Dy compound in the mixture. Addition of was more effective than for the improvement of coercivity. Reduction of the remanence by the addition of Dy compound, however, was larger than expected mostly due to unresolved coarse Dy compound in the magnet. EPMA analysis revealed that Dy was diffused throughout the grains in the magnet mixed with whereas Dy was rather concentrated around grain boundaries in the magnet mixed with .

Effect of Cu content on microstructural and magnetic properties of a (wt.%), (x = 0.2, 0.3, 0.4, 0.5) strip-cast was studied. The average inter-lamellar spacing in the free surface and wheel side of the strip cast increased as the Cu content increases. The grain uniformity, the grain alignment, and (00L) texture of the strip cast increased with Cu contents up to 0.4 wt.%. These microstructural changes were attributed to the decrease of the effective cooling rate of the melted alloy caused by the decrease of the melting temperature of resulting from Cu addition. Coercivity and remanence were increased because of the grain alignment and (00L) texture improvement with Cu contents up to 0.4 wt.%.

This study investigated the dependence of the various sputtering conditions (Ar pressure: 2~10 mTorr, Power: 50~150 W) and thickness (50~1200 nm) of Si thin film on the electrochemical properties, microstructural properties and the capacity fading of a Si thin film anode. A Si layer and a Ti buffer layer were deposited on Copper foil by RF-magnetron sputtering. At 10 mTorr, the 50 W sample showed the best capacity of 3323 mAh/g, while the 100 W sample showed the best capacity retention of 91.7%, also at 10 mTorr. The initial capacities and capacity retention in the samples apart from the 50W sample at 10 mTorr were enhanced as the Ar pressure and power increased. This was considered to be related to the change of the microstructure and the surface morphology by various sputtering conditions. In addition, thinner Si film anodes showed better cycling performance. This phenomenon is caused by the structural stress and peeling off of the Si layer by the high volume change of Si during the charge/discharge process.