Aluminum nitride (AlN) has versatile and intriguing properties, such as wide direct bandgap, high thermal conductivity, good thermal and chemical stability, and various functionalities. Due to these properties, AlN thin films have been applied in various fields. However, AlN thin films are usually deposited by high temperature processes like chemical vapor deposition. To further enlarge the application of AlN films, atomic layer deposition (ALD) has been studied as a method of AlN thin film deposition at low temperature. In this mini review paper, we summarize the results of recent studies on AlN film grown by thermal and plasma enhanced ALD in terms of processing temperature, precursor type, reactant gas, and plasma source. Thermal ALD can grow AlN thin films at a wafer temperature of 150~550 oC with alkyl/amine or chloride precursors. Due to the low reactivity with NH3 reactant gas, relatively high growth temperature and narrow window are reported. On the other hand, PEALD has an advantage of low temperature process, while crystallinity and defect level in the film are dependent on the plasma source. Lastly, we also introduce examples of application of ALD-grown AlN films in electronics.

Abstracts
1.서 론
2. 열적 원자층 증착법(Thermal ALD)
    2.1 알루미늄 전구체
    2.2 온도
3. Plasma-enhanced ALD
    3.1 플라즈마 반응가스
    3.2 플라즈마 발생 장치
4. 전자 소자 응용
5. 결론 및 전망
References

• 윤희주(서울과학기술대학교 신소재공학과) | Hee Ju Yun (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
• 김호경(서울과학기술대학교 안경광학과) | Hogyoung Kim (Department of Visual Optics, Seoul National University of Science and Technology)
• 최병준(서울과학기술대학교 신소재공학과) | Byung Joon Choi (Department of Materials Science and Engineering, Seoul National University of Science and Technology) Corresponding author