We have investigated the properties of thin film transistors(TFT) fabricated using zinc tin oxide(ZTO) thin films deposited via on-axis sputtering and FTS methods. ZTO thin films deposited by FTS showed lower root-mean-square(RMS) roughness and more uniformity than those deposited via on-axis sputtering. We observed enhanced electrical properties of ZTO TFT deposited via FTS. The ZTO films were deposited at room temperature via on-axis sputtering and FTS. The as-deposited ZTO films were annealed at 400 oC. The TFT using the ZTO films deposited via FTS process exhibited a high mobility of 12.91 cm2/V.s, a low swing of 0.80 V/decade, Vth of 5.78 V, and a high Ion/off ratio of 2.52 × 106.

• 이세희(충남대학교 신소재공학과) | Se-Hee Lee
• 윤순길(충남대학교 신소재공학과) | Soon-Gil Yoon Corresponding author