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InGaZnO 박막 트랜지스터의 전기 및 광학적 특성에 대한 전자빔 조사의 영향 KCI 등재 SCOPUS

Influence of Electron Beam Irradiation on the Electrical and Optical Properties of InGaZnO Thin Film Transistor

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한국재료학회지 (Korean Journal of Materials Research)
한국재료학회 (Materials Research Society Of Korea)
초록

The effects of electron beam(EB) irradiation on the electrical and optical properties of InGaZnO(IGZO) thin films fabricated using a sol-gel process were investigated. As the EB dose increased, the electrical characteristic of the IGZO TFTs changed from semiconductor to conductor, and the threshold voltage values shifted to the negative direction. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies increased from 14.68 to 19.08 % as the EB dose increased from 0 to 1.5 × 1016 electrons/cm2. In addition, spectroscopic ellipsometer analysis showed that the optical band gap varied from 3.39 to 3.46 eV with increasing EB dose. From the result of band alignment, it was confirmed that the Fermi level(EF) of the sample irradiated with 1.5 × 1016 electrons/cm2 was located at the closest position to the conduction band minimum(CBM) due to the increase of electron carrier concentration

저자
  • 조인환(한국원자력연구원 중성자응용연구부 한국기술교육대학교 에너지신소재화학공학부) | In-Hwan Cho
  • 박해웅(한국기술교육대학교 에너지신소재화학공학부) | Hai-Woong Park
  • 김찬중(한국원자력연구원 중성자응용연구부) | Chan-Joong Kim
  • 전병혁(한국원자력연구원 중성자응용연구부) | Byung-Hyuk Jun Corresponding author