Graphene is an interesting material because it has remarkable properties, such as high intrinsic carrier mobility, good thermal conductivity, large specific surface area, high transparency, and high Young’s modulus values. It is produced by mechanical and chemical exfoliation, chemical vapor deposition (CVD), and epitaxial growth. In particular, large-area and uniform single- and few-layer growth of graphene is possible using transition metals via a thermal CVD process. In this study, we utilize polystyrene and boron oxide, which are a carbon precursor and a doping source, respectively, for synthesis of pristine graphene and boron doped graphene. We confirm the graphene grown by the polystyrene and the boron oxide by the optical microscope and the Raman spectra. Raman spectra of boron doped graphene is shifted to the right compared with pristine graphene and the crystal quality of boron doped graphene is recovered when the synthesis time is 15 min. Sheet resistance decreases from approximately 2000 Ω/sq to 300Ω/sq with an increasing synthesis time for the boron doped graphene.

Abstract
 1. 서 론
 2. 실험 방법
 3. 결과 및 고찰
 4. 결 론
 References

• 최진석(금오공과대학교 신소재공학과) | Jinseok Choi (Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology)
• 안성진(금오공과대학교 신소재공학과) | Sung Jin An (Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology) Corresponding author