In this study, we report the microstructural evolution and shear strength of an Sn-Sb alloy, used for die attach process as a solder layer of backside metal (BSM). The Sb content in the binary system was less than 1 at%. A chip with the Sn-Sb BSM was attached to a Ag plated Cu lead frame. The microstructure evolution was investigated after die bonding at 330 °C, die bonding and isothermal heat treatment at 330 °C for 5 min and wire bonding at 260 °C, respectively. At the interface between the chip and lead frame, Ni3Sn4 and Ag3Sn intermetallic compounds (IMCs) layers and pure Sn regions were confirmed after die bonding. When the isothermal heat treatment is conducted, pure Sn regions disappear at the interface because the Sn is consumed to form Ni3Sn4 and Ag3Sn IMCs. After the wire bonding process, the interface is composed of Ni3Sn4, Ag3Sn and (Ag,Cu)3Sn IMCs. The Sn-Sb BSM had a high maximum shear strength of 78.2 MPa, which is higher than the required specification of 6.2 MPa. In addition, it showed good wetting flow.

음이온 교환막은 수소를 생산할 수 있는 수전해와 수소 연료를 사용하여 전기 에너지를 사용할 수 있는 연료전지 시스템에 사용될 수 있다. 음이온 교환막은 알칼라인 조건에서 수산화 이온(OH-) 전도를 기반으로 작동한다. 하지만, 음이온 교환막은 상대적으로 낮은 이온 전도도와 알칼라인 안정성을 보이기 때문에 아직 수전해 및 연료전지에 상용화되는 데 한계가 존재한다. 이를 해결하기 위해서는 고분자 구조를 합리적으로 설계하여 새로운 음이온 교환막 소재를 개발하는 것이 필수적이다. 특히, 고분자의 물성, 이온전도도, 그리고 알칼라인 안정성이 우수하게 유지될 수 있도록 고분자 구조 및 합성 방법 등을 제어하여 한다. 음이온 교환막 중에서 Poly(2,6-dimethyl-1,4-phenylene oxide) (PPO) 기반의 소재는 상용화 되어 접근이 용이하다. 또한, 다른 고분자에 비해 상대적으로 기계적인 특성 및 화학적 안정성이 높아 음이온 교환막 개발에 자주 사용되고 있다. 본 총설에서는 음이온 교환막에서 사용되는 PPO 기반의 고분자 소재 개발 전략 및 특성에 대해서 소개하고자 한다.

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

Chemical vapor deposition method using CH4 gaseous hydrocarbons is generally used to synthesize large-area graphene. Studies using non-gaseous materials such as ethanol, hexane and camphor have occasionally been conducted. In this study, large-area graphene is synthesized via chemical vapor deposition using polyethylene as a carbon precursor. In particular, we used a poly glove, which is made of low-density polyethylene. The characteristics of the synthesized graphene as functions of the growth time of graphene and the temperature for vaporizing polyethylene are evaluated by optical microscopy and Raman spectroscopy. When the polyethylene vaporizing temperature is over 150 oC, large-area graphene with excellent quality is synthesized. Raman spectroscopy shows that the D peak intensity increased and the 2D peak intensity decreased with increasing growth time. The reason for this is that sp3 bonds in the graphene can form when the correct amount of carbon source is supplied. The quality of the graphene synthesized using polyethylene is similar to that of graphene synthesized using methane gas.

Graphene is an interesting material because it has remarkable properties, such as high intrinsic carrier mobility, good thermal conductivity, large specific surface area, high transparency, and high Young’s modulus values. It is produced by mechanical and chemical exfoliation, chemical vapor deposition (CVD), and epitaxial growth. In particular, large-area and uniform single- and few-layer growth of graphene is possible using transition metals via a thermal CVD process. In this study, we utilize polystyrene and boron oxide, which are a carbon precursor and a doping source, respectively, for synthesis of pristine graphene and boron doped graphene. We confirm the graphene grown by the polystyrene and the boron oxide by the optical microscope and the Raman spectra. Raman spectra of boron doped graphene is shifted to the right compared with pristine graphene and the crystal quality of boron doped graphene is recovered when the synthesis time is 15 min. Sheet resistance decreases from approximately 2000 Ω/sq to 300Ω/sq with an increasing synthesis time for the boron doped graphene.

There are various manufacturing processes for pure SiO2 that is used as abrasives, chemicals, filters, and glasses, and in metallurgy and optical industries. In the optical fiber industry, to produce SiO2 preform, SiCl4 is utilized as a raw material. However, the combustion reaction of SiCl4 has caused critical environmental issues, such as ozone deficiency by chlorine compounds, the greenhouse effect by carbon dioxide and corrosive gas such as hydrochloric acid. Thus, finding an alternative source that does not have those environmental issues is important for the future. Octamethylcyclotetrasiloxane (OMCTS or D4) as a chlorine free source is recently promising candidate for the SiO2 preform formation. In this study, we first conducted a vaporizer design to vaporize the OMCTS. The vaporizer for the OMCTS vaporization was produced on the basis of the results of the vaporizer design. The size of the primary particle of the SiO2 formed by OMCTS was less than 100 nm. X-ray diffraction patterns of the SiO2 indicated an amorphous phase. Fourier-transform infrared spectroscopy analysis revealed the Si-O-Si bond without the -OH group.

콘크리트 포장의 내구성 저하는 포장체의 파손뿐만 아니라 사용자의 주행성에도 영향을 주며, 또한 유지관리 비용을 증가시키는 등 복합적 문제를 초래한다. 이러한 콘크리트 내구성 문제를 개선하기 위한 방안으로 콘크리트의 내부양생(internal curing)에 대한 관심이 고조되고 있다. 내부양생은 표면 살수나 피막양생제를 도포하는 기존의 양생 방식과는 달리 콘크리트 배합 시 수분공급 물질을 혼입하여 내부로부터 수분을 공급하는 기법으로, 양생효율을 현저히 증진시켜 역학적 특성, 투수 및 균열 저항성, 부피안정성 등 콘크리트의 다양한 성능을 향상시키는 것으로 잘 알려져 있다. 특히 포장용 콘크리트 배합과 같이 광물성혼화재(SCMs)를 포함하는 경우, 소요성능의 발현을 위해서는 철저한 양생이 무엇보다 중요하다. 이에 착안하여 본 연구에서는 최근 콘크리트의 내부양생 재료로서 각광을 받고 있는 고흡수성폴리머(SAP)를 적용한 모르타르의 강도 및 부피변화 특성을 파악하여 콘크리트 포장에의 적용 가능성을 평가하였다. 이를 위하여 가교밀도와 평균 입자크기가 다른 4종의 폴라아크릴산나트륨 SAP를 혼입한 모르타르를 제작하고 SAP 함량 및 종류별 강도 발현, 자기수축 및 내부 상대습도 거동 특성을 측정하였다.

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, As+ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of 1.263 × 1018 cm−3 were obtained when the dose of 5 × 1014 As ions/cm2 was implanted and the RTA was conducted at 850 oC for 1 min.

Synthesis of nano-silica using water glass in a Sol-Gel process is one of several methods to manufacture nano-silica. In nano-silica synthesized from water glass, there are various metal impurities. However, synthesis of nano-silica using water glass in a Sol-Gel process is an interesting method because it is relatively simple and cheap. In this study, nano-silica was synthesized from water glass; we investigated the effect of pH on the synthesis of nano-silica. The morphology of the nanosilica with pH 2 was flat, but the surface of the nano-silica with pH 10 had holes similar to small craters. As a result of ICPOES analysis, the amount of Na in the nano-silica with pH 2 was found to be 170 mg/kg. On the other hand, the amount of Na in the nano-silica with pH 10 was found to be 56,930 mg/kg. After calcination, the crystal structure of the nano-silica with pH 2 was amorphous. The crystal structure of the nano-silica with pH 10 transformed from amorphous to tridymite. This is because elemental Na in the nano-silica had the effect of decreasing the phase transformation temperature

Silica nano-powder (SNP) is an inorganic material able to provide high-performance in various fields because of its multiple functions. Methods used to synthesize high purity SNP, include crushing silica minerals, vapor reaction of silica chloride, and a sol-gel process using TEOS and sodium silicate solution. The sol-gel process is the cheapest method for synthesis of SNP, and was used in this study. First, we investigated the shape and the size of the silica-powder particles in relation to the variation of HCl and sodium silicate concentrations. After drying, the shape of nano-silica powder differed in relation to variations in the HCl concentration. As the pH of the solution increased, so did the density of crosslinking. Initially, there was NaCl in the SNP. To increase its purity, we adopted a washing process that included centrifugation and filtration. After washing, the last of the NaCl was removed using DI water, leaving only amorphous silica powder. The purity of nano-silica powder synthesized using sodium silicate was over 99.6%.

황해 남동 이질대에서 채취된 51개의 표층퇴적물 시료와 황해로 유입되는 한국과 중국의 하천퇴적물 시료 33개에 대해서 반정량 X선회절분석법을 통한 점토광물의 상대적인 함량을 토대로 주성분분석을 도입하여 해양표층퇴적물의 기원지를 연구하였다. 전체 자료의 98% 이상을 반영하는 제1주 성분과 제2주성분을 이용하여 R 프로그램을 통해 주성분분석을 수행하였다. 황해 남동 이질대 퇴적물의 점토광물 함량은 남부 지역과 북부 지역에서 거의 차이가 나지 않으며, 성분도표상에서의 해양퇴적물 분포는 중국의 황하, 양쯔강 퇴적물보다 한국의 하천퇴적물과 더욱 근접한 양상을 보였다. 이러한 통계적 분석 결과를 바탕으로 황해 남동 이질대는 거의 모두가 한국 하천퇴적물로부터 유래했다는 것을 추정할 수 있다. 또한, 황해 남동 이질대에 한국 하천에서 유출되는 양보다 더 많은 퇴적물이 축적된 이유로는 퇴적물의 침식과 재동에 의한 것으로 판단된다. 주성분분석은 한반도 주변 해역 퇴적물의 기원지 연구에 유용하게 사용될 것으로 기대된다.

제주 남서 이질대에서 채취된 138개의 해양표층퇴적물 시료와 황하와 양쯔강 하천퇴적물 시료에 대하여 반정량 X선회절분석법에 의한 점토광물 상대조성을 바탕으로 주성분분석을 이용하여 퇴적물의 기원지를 연구하였다. 제1주성분과 제2주성분이 전체 자료의 90% 이상을 설명하기 때문에 두 주성분만을 가지고 R프로그램을 이용하여 주성분분석을 실시하였다. 제주 남서 이질대 내 각각의 점토광물의 분포양상은 매우 복잡하지만, 전체적인 분포양상을 고려할 때, 스멕타이트와 카올리나이트는 서부지역에서 높은 함량을 보였고 일라이트와 녹니석은 동부지역에서 상대적으로 높은 값을 나타냈다. 제주 남서 이질대의 동부지역에서 보여주는 상대적으로 높은 일라이트와 녹니석 함량은 양쯔강 퇴적물과, 서부지역에서의 높은 스멕타이트와 카올리나이트 함량은 황하 퇴적물과 더 유사한 양상을 나타낸다. 이러한 통계 처리 결과를 바탕으로 제주 남서 이질대의 동부지역은 양쯔강에서 유래하였고 서부지역은 황하로부터 기원했음을 추정할 수 있다. 추후 퇴적물 기원지 연구에 주성분분석이 유용하게 활용될 것으로 기대한다.