We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

Abstract
1.서 론
2. 실험 방법
    2.1 Ti-SBD 제조를 위한 Ti-실리사이드 및 금속 층형성
    2.2 특성 분석
3. 결과 및 고찰
4.결 론
References

• 최진석(금오공과대학교 신소재공학과) | Jinseok Choi (Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology)
• 최여진(금오공과대학교 신소재공학과) | Yeo Jin Choi (Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology)
• 안성진(금오공과대학교 신소재공학과) | Sung Jin An (Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology) Corresponding author