Despite numerous advances in the preparation and use of GaN, and many leading-edge applications in lighting technologies, the preparation of high-quality GaN powder remains a challenge. Ammonolytic preparations of polycrystalline GaN have been studied using various precursors, but all were time-consuming and required high temperatures. In this study, an efficient and low-temperature method to synthesize high-purity hexagonal GaN powder is developed using sub-micron Ga2O3 powder as a starting material. The sub-micron Ga2O3 powder was prepared by an ultrasonic spray pyrolysis process. The GaN powder is synthesized from the sub-micron Ga2O3 powder through a nitridation treatment in an NH3 flow at 800℃. The characteristics of the synthesized powder are systematically examined by X-ray diffraction, scanning and transmission electron microscopy, and UV-vis spectrophotometer.

Abstract
 1. 서 론
 2. 실험방법
 3. 결과 및 고찰
 4. 결 론
 References

• 지명준(서울과학기술대학교 신소재공학과) | Myeong-Jun Ji (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
• 유재현(서울과학기술대학교 신소재공학과) | Jae-Hyun Yoo (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
• 이영인(서울과학기술대학교 신소재공학과) | Young-In Lee (Department of Materials Science and Engineering, Seoul National University of Science and Technology) Corresponding Author