Graphene could be damaged and contain impurities on its surface while several fabrications such as deposition, etching, and patterning because one needs photoresist masking operation to divide the section for deposition or not. In this paper, we investigated the effectiveness of selective atomic layer deposition for clean graphene surface. Atomic layer deposition (ALD) has strong point at very uniform conformity of 1 rms roughness. In this process, H2O is generally used by one of precursors. This H2O precursor make deposition of ALD on hydrophilic surface not hydrophobic. Therefore, we used this property at graphene which has hydrophobic surface. And then, we analyzed selective deposition of ALD on graphene which are grown on Cu foil and transferred by wet process not cleaved from HOPG.

Abstract
 1. 서론
 2. 기존 선택적 원자층 증착의 문제점
 3. 실험 및 결과
  3.1 원자층 증착 검증
  3.2 선택적 원자층 증착 검증
 4. 결론
 References

• 정원석(Mechanical & Automotive Engineering, Wonkwang University) | Wonsuk Jung Corresponding Author