The surface of silicon dummy wafers is contaminated with metallic impurities owing to the reaction with and adhesion of chemicals during the oxidation process. These metallic impurities negatively affect the device performance, reliability, and yield. To solve this problem, a wafer-cleaning process that removes metallic impurities is essential. RCA (Radio Corporation of America) cleaning is commonly used, but there are problems such as increased surface roughness and formation of metal hydroxides. Herein, we attempt to use a chelating agent (EDTA) to reduce the surface roughness, improve the stability of cleaning solutions, and prevent the re-adsorption of impurities. The bonding between the cleaning solution and metal powder is analyzed by referring to the Pourbaix diagram. The changes in the ionic conductivity, H2O2 decomposition behavior, and degree of dissolution are checked with a conductivity meter, and the changes in the absorbance and particle size before and after the reaction are confirmed by ultraviolet-visible spectroscopy (UV-vis) and dynamic light scattering (DLS) analyses. Thus, the addition of a chelating agent prevents the decomposition of H2O2 and improves the life of the silicon wafer cleaning solution, allowing it to react smoothly with metallic impurities.

Abstract
1. 서 론
2. 실험 방법
    2.1. EDTA 첨가에 따른 금속 용해 거동
    2.2. 특성 평가
3. 결과 및 고찰
4. 결 론
References

• 김명석(단국대학교 에너지공학과) | Myungsuk Kim (Department of Energy Engineering, Dankook University)
• 류근혁(단국대학교 에너지공학과) | Keunhyuk Ryu (Department of Energy Engineering, Dankook University)
• 이근재(단국대학교 에너지공학과) | Kun-Jae Lee (Department of Energy Engineering, Dankook University) Corresponding Author