In this study, a ZnS film of 8-mm thickness was prepared on graphite using a hot-wall-type CVD technique. The ZnS thick film was then hot isostatically pressed under different pressures (125–205 MPa) in an argon atmosphere. The effects of pressure were systematically studied in terms of crystallographic orientation, grain size, density, and transmittance during the HIP process. X-ray diffraction pattern analysis revealed that the preferred (111) orientation was well developed after a pressure of 80 MPa was applied during the HIP process. A high transmittance of 61.8% in HIPZnS was obtained under the optimal conditions (1010oC, 205MPa, 6 h) as compared with a range of approximately 10% for the CVD-ZnS thick film under a 550-nm wavelength. In addition, the main cause of the improvement in transmittance was determined to be the disappearance of the scattering factor due to grain growth and the increase in density.

Abstract
1. 서 론
2. 실험방법
    2.1 CVD를 이용한 ZnS의 제조
    2.2 HIP을 이용한 CVD-ZnS의 열처리
3. 결과 및 고찰
4. 결 론
References

• 권인회(충북대학교 공과대학 재료공학과) | In-He Gwon (Department of Materials Engineering, Chungbuk National University)
• 장건익(충북대학교 공과대학 재료공학과) | Gun-Eik Jang (Department of Materials Engineering, Chungbuk National University) Corresponding Author