In this study, a ZnS film of 8-mm thickness was prepared on graphite using a hot-wall-type CVD technique. The ZnS thick film was then hot isostatically pressed under different pressures (125–205 MPa) in an argon atmosphere. The effects of pressure were systematically studied in terms of crystallographic orientation, grain size, density, and transmittance during the HIP process. X-ray diffraction pattern analysis revealed that the preferred (111) orientation was well developed after a pressure of 80 MPa was applied during the HIP process. A high transmittance of 61.8% in HIPZnS was obtained under the optimal conditions (1010oC, 205MPa, 6 h) as compared with a range of approximately 10% for the CVD-ZnS thick film under a 550-nm wavelength. In addition, the main cause of the improvement in transmittance was determined to be the disappearance of the scattering factor due to grain growth and the increase in density.

We develop a purification process of Hg2Br2 raw powders using a physical vapor transport(PVT) process, which is essential for the fabrication of a high performance acousto-optic tunable filter(AOTF) module. Specifically, we characterize and compare three Hg2Br2 powders: Hg2Br2 raw powder, Hg2Br2 powder purified under pumping conditions, and Hg2Br2 powder purified under vacuum sealing. Before and after purification, we characterize the powder samples through X-ray diffraction and X-ray photoelectron spectroscopy. The corresponding results indicate that physical properties of the Hg2Br2 compound are not damaged even after the purification process. The impurities and concentration in the purified Hg2Br2 powder are evaluated by inductively coupled plasma-mass spectroscopy. Notably, compared to the sample purified under pumping conditions, the purification process under vacuum sealing results in a higher purity Hg2Br2 (99.999 %). In addition, when the second vacuum sealing purification process is performed, the remaining impurities are almost removed, giving rise to Hg2Br2 with ultra-high purity. This high purification process might be possible due to independent control of impurities and Hg2Br2 materials under the optimized vacuum sealing. Preparation of such a highly purified Hg2Br2 materials will pave a promising way toward a high-quality Hg2Br2 single crystal and then high performance AOTF modules.