Atomic layer deposition (ALD) is a promising technology for the uniform deposition of thin films. ALD is based on a self-limiting mechanism, which can effectively deposit thin films on the surfaces of powders of various sizes. Numerous studies are underway to improve the performance of thermoelectric materials by forming core-shell structures in which various materials are deposited on the powder surface using ALD. Thermoelectric materials are especially relevant as clean energy storage materials due to their ability to interconvert between thermal and electrical energy by the Seebeck and Peltier effects. Herein, we introduce a surface and interface modification strategy based on ALD to control the performance of thermoelectric materials. We also discuss the properties of the interface between various deposition materials and thermoelectric materials.

Abstract
1. 서 론
2. 열전소재 구조 및 원리
3. Powder ALD
4. ALD 기술의 열전소재 적용
5. 전 망
References

• 이승혁(한국과학기술연구원 전자재료연구센터, 한양대학교 재료화학공학과) | Seunghyeok Lee (Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea, Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea)
• 박태주(한양대학교 재료화학공학과) | Tae Joo Park (Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea)
• 김성근(한국과학기술연구원 전자재료연구센터) | Seong Keun Kim (Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea) Corresponding author