논문 상세보기

A Consideration on Segregation Process of Dopant at WC/Co and WC/WC Interfaces in VC Doped WC-Co Submicro-grained Hardmetal

  • 언어KOR
  • URLhttps://db.koreascholar.com/Article/Detail/4147
모든 회원에게 무료로 제공됩니다.
한국분말재료학회(구 한국분말야금학회) (Korean Powder Metallurgy Institute)
초록

WC/WC interface in VC mono-doped WC-10mass%Co submicro-grained hardmetals of was investigated together with WC/Co interface by using HRTEM and XMA. The thickness of V-rich layer and the analytical value of V at WC/WC interface were almost the same as those at WC/Co interfaces. These results, etc., suggested that the V-rich layers at both interfaces were not generated by an equilibrium segregation mechanism in the sintering stage, but generated by a preferential precipitation mechanism during the solidification of Co liquid phase in the cooling stage. Based on this suggestion, we succeeded in developing a nano-grained hardmetal with 100 nm .

저자
  • Kawakami
  • Masaru
  • Terada
  • Osamu
  • Hayashi
  • Koji