A simulation based (DFT) study is performed on activated 2D-carbon sheet without and with vacancies of central carbon atoms, and explored the electronic properties. The inter-atomic distance at the center of activated carbon sheet is gradually increased with increasing number of vacancies. We get lower binding energy with three vacancies, and higher without a vacancy. A covalent bond is found between C–C atoms, density of states exhibit a semiconductor nature of a system without vacancy, and metallic nature in the presence of vacancies. There are higher peaks of resultant anti-bonding states with three vacancy system and it exhibits higher amorphous nature which causes higher electron concentration, mobility and higher electrical conductivity.

    Abstract
    1 Introduction
    2 Methodology
    3 Results and discussion
    4 Conclusions
    Acknowledgements 
    References

• Ratnesh Kumar(Department of Physics, University of Lucknow)
• Abhishek Kumar(Department of Physics, University of Lucknow)
• B. Keshav Rao(Department of Applied Physics, FET-SSGI Shri Shankaracharya Technical Campus)
• Ambrish K. Srivastava(Department of Physics, Deen Dayal Upadhyaya Gorakhpur University)
• Mohan L. Verma(Department of Applied Physics, FET-SSGI Shri Shankaracharya Technical Campus)
• Neeraj Misra(Department of Physics, University of Lucknow)