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Bias process for heteroepitaxial diamond nucleation on Ir substrates KCI 등재

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  • URLhttps://db.koreascholar.com/Article/Detail/421128
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Carbon Letters (Carbon letters)
한국탄소학회 (Korean Carbon Society)
초록

Heteroepitaxy is a better method of enlarging SCD wafer size than homoepitaxy. In this work, several aspects of the bias process for heteroepitaxial diamond nucleation are studied experimentally. First, with increasing bias time, the diamondnucleation pathway is found to transform from “isolated-crystal nucleation” to “typical domain-nucleation” and back to “isolated-crystal nucleation.” An interdependent relationship between bias voltage and bias time is proposed: the higher the bias voltage, the shorter the bias time. Second, a correlation exists between the threshold bias voltage and reactor-chamber pressure: a higher reactor chamber pressure usually requires a higher threshold bias voltage to realize “typical domain nucleation.” Third, diamond bias-enhanced nucleation and growth is observed at a high CH4 content, where the dynamic equilibrium between amorphous-carbon-layer deposition and atomic-hydrogen etching is broken. Finally, epitaxial nucleation is obtained on a substrate with ∅30 mm in a home-made MPCVD setup.

목차
    Abstract
    1 Introduction
    2 Experimental
    3 Results and discussion
        3.1 Evolution of nucleation with bias time
        3.2 Interdependent relationship between bias voltage and bias time
        3.3 Correlation between bias voltage and reactor-chamber pressure
        3.4 Bias-enhanced nucleation and growth at a high CH4 content
        3.5 Diamond nucleation on a large scale
    4 Conclusion
    Acknowledgements 
    References
저자
  • Weihua Wang(National Key Laboratory of Special Environment Composite Technology, Harbin Institute of Technology)
  • Shilin Yang(National Key Laboratory of Special Environment Composite Technology, Harbin Institute of Technology)
  • Benjian Liu(National Key Laboratory of Special Environment Composite Technology, Harbin Institute of Technology)
  • Xiaobin Hao(National Key Laboratory of Special Environment Composite Technology, Harbin Institute of Technology)
  • Jiecai Han(National Key Laboratory of Special Environment Composite Technology, Harbin Institute of Technology)
  • Bing Dai(National Key Laboratory of Special Environment Composite Technology, Harbin Institute of Technology, HRG Institute (Zhongshan) of Unmanned Equipment and AI)
  • Jiaqi Zhu(National Key Laboratory of Special Environment Composite Technology, Harbin Institute of Technology, Key Laboratory of Micro‑Systems and Micro‑Structures Manufacturing Ministry of Education, Harbin Institute of Technology)