High-quality diamond films have attracted extensive attentions due to their excellent optical and electrical properties. However, several issues, such as random orientation, stress accumulation, and slow growth rate, severely limit its applications. In this paper, high-quality polycrystalline diamond films with highly ordered (100) orientation were prepared by microwave plasma chemical vapor deposition. The effects of growth parameters on the microstructure, quality and residual stress of diamond films were investigated. Experimental results indicate that relatively high temperature at low methane concentration will promote the formation of (100) oriented grains with a low compressive stress. Optimized growth parameters, a methane concentration of 2% along with a pressure of 250 Torr and temperature at 1050 ℃, were used to acquire high growth rate of 7.9 μm/h and narrow full width at half maximum of Raman peak of 5.5 cm− 1 revealing a high crystal quality. It demonstrates a promising method for rapid growth of high-quality polycrystalline diamond films with (100) orientation, which is vital for improving the diamond related applications at low cost.

High-speed growth of high-quality polycrystalline diamond films by MPCVD
    Abstract
    1 Introduction
    2 Experimental details
    3 Results and discussion
    4 Conclusions
    Acknowledgements 
    References

• Kai Chen(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People’s Republic of China)
• Tao Tao(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People’s Republic of China)
• Wenxiao Hu(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People’s Republic of China)
• Yucong Ye(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People’s Republic of China)
• Kaiwen Zheng(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People’s Republic of China)
• Jiandong Ye(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People’s Republic of China)
• Ting Zhi(College of Electronic and Optical Engineering & College of Flexible Electronics, Department of Electronic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People’s Republic of China)
• Xiwei Wang(Institute of Novel Semiconductors, Shandong University, Jinan 250100, People’s Republic of China)
• Bin Liu(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People’s Republic of China)
• Rong Zhang(Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People’s Republic of China)