β-Ga2O3 has become the focus of considerable attention as an ultra-wide bandgap semiconductor following the successful development of bulk single crystals using the melt growth method. Accordingly, homoepitaxy studies, where the interface between the substrate and the epilayer is not problematic, have become mainstream and many results have been published. However, because the cost of homo-substrates is high, research is still mainly at the laboratory level and has not yet been scaled up to commercialization. To overcome this problem, many researchers are trying to grow high quality Ga2O3 epilayers on hetero-substrates. We used diluted SiH4 gas to control the doping concentration during the heteroepitaxial growth of β-Ga2O3 on c-plane sapphire using metal organic chemical vapor deposition (MOCVD). Despite the high level of defect density inside the grown β-Ga2O3 epilayer due to the aggregation of random rotated domains, the carrier concentration could be controlled from 1 × 1019 to 1 × 1016 cm-3 by diluting the SiH4 gas concentration. This study indicates that β-Ga2O3 hetero-epitaxy has similar potential to homo-epitaxy and is expected to accelerate the commercialization of β-Ga2O3 applications with the advantage of low substrate cost.

1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
Acknowledgement
References

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• 김선재(한국세라믹기술원 디스플레이소재센터, 한국항공대학교 신소재공학과) | Sunjae Kim (Display Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea, Department of Materials Science and Engineering, Korea Aerospace University, Goyang 10540, Republic of Korea)
• 천현우(한국세라믹기술원 디스플레이소재센터, 부산대학교 나노메카트로닉스공학과) | Hyeon-U Cheon (Display Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea, Department of Nanomechatronics Engineering, Pusan National University, Busan 46241, Republic of Korea)
• 이재형(한국세라믹기술원 디스플레이소재센터) | Jae-Hyeong Lee (Display Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea)
• 전대우(한국세라믹기술원 디스플레이소재센터) | Dae-Woo Jeon (Display Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea)
• 박지현(한국세라믹기술원 디스플레이소재센터) | Ji-Hyeon Park (Display Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea) Corresponding author