In semiconductor memory, the kinds of voltage generator are high voltage generator, negative voltage generator, drain voltage generator and etc. The relevant circuits supported voltage generator, are clock generator, sense amplifier, voltage regulator and etc. The voltage generator consists of MOS diodes and MOS capacitors. To get the out voltage with sufficient charge, the MOS capacitors are big size. These MOS transistors can be adapted only on the EEPROM process. Thus, in this paper, we designed stacked metal capacitor. This capacitor is small size but can get much capacitance. This capacitor is designed to comb type using metal-line and poly-line. The size of designed capacitor is 208×52㎛2 and the capacitance is about 4㎊. The stacked metal capacitor can get much capacitance of 5～6 times than single plane capacitor. Also this capacitor will be easy adapted in sub-micro process technology of semiconductor memory. And this capacitor can be adapted on all memory process.

Abstract
 1. Introduction
 2. Voltage generator composition
 3. Capacitor design
 4. Result and ancient temple
 5. Conclusion
 Reference

• 조명현(서일대학 정보기술계열) | M. H. CHO
• 이명언(서일대학 정보기술계열) | M. U. LEE