In semiconductor memory, the kinds of voltage generator are high voltage generator, negative voltage generator, drain voltage generator and etc. The relevant circuits supported voltage generator, are clock generator, sense amplifier, voltage regulator and etc. The voltage generator consists of MOS diodes and MOS capacitors. To get the out voltage with sufficient charge, the MOS capacitors are big size. These MOS transistors can be adapted only on the EEPROM process. Thus, in this paper, we designed stacked metal capacitor. This capacitor is small size but can get much capacitance. This capacitor is designed to comb type using metal-line and poly-line. The size of designed capacitor is 208×52㎛2 and the capacitance is about 4㎊. The stacked metal capacitor can get much capacitance of 5～6 times than single plane capacitor. Also this capacitor will be easy adapted in sub-micro process technology of semiconductor memory. And this capacitor can be adapted on all memory process.

Recently, buildings are constructed increasingly higher and even more people are using elevators every day. Therefore, more efficient means of vertical transportation are required. Most of high-rise buildings is equipped with elevators. Unlike one elevator system, a multi-elevator system requires a function, which can distribute multiple elevators effectively. This paper examines a multi-elevator system, which has been modeling mathematically, in order to reduce waiting time and use elevators more effectively.

Composition element of power-up reset circuit is consisted with many PMOS and by capacitors, reduce number of used element to improve power-up reset circuit to secure stable early action of memory chip, and size of element decreases and consumption area of circuit itself could reduce about 10%. In this paper, when rise slowly existing circuit and circuit that improve by comparison simulation result and power rise time 200㎳ to confirm stability of circuit action, output voltage waveform peak of improved power-up reset circuit secures more than 2Vt, and displayed stabler circuit action than change width few existing circuit by temperature.