Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N2 sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10−3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N2 gas in the Ar:N2 gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N2 gas ratio and large amount of N2 gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N2=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO2-SixNy thin film is satisfactory at 97 %.

Surface morphology and optical properties such as transmittance and haze effect of glass etched by physical and chemical etching processes were investigated. The physical etching process was carried out by pen type sandblasting process with 15~20 μm dia. of Al2O3 media; the chemical etching process was conducted using HF-based mixed etchant. Sandblasting was performed in terms of variables such as the distance of 8 cm between the gun nozzle and the glass substrate, the fixed air pressure of 0.5bar, and the constant speed control of the specimen stage. The chemical etching process was conducted with mixed etching solution prepared by combination of BHF (Buffered Hydrofluoric Acid), HCl, and distilled water. The morphology of the glass surface after sandblasting process displayed sharp collision vestiges with nonuniform shapes that could initiate fractures. The haze values of the sandblasted glass were quantitatively acceptable. However, based on visual observation, the desirable Anti-Glare effect was not achieved. On the other hand, irregularly shaped and sharp vestiges transformed into enlarged and smooth micro-spherical craters with the subsequent chemical etching process. The curvature of the spherical crater increased distinctly by 60 minutes and decreased gradually with increasing etching time. Further, the spherical craters with reduced curvature were uniformly distributed over the etched glass surface. The haze value increased sharply up to 55 % and the transmittance decreased by 90 % at 60 minutes of etching time. The ideal haze value range of 3~7 % and transmittance value range of above 90 % were achieved in the period of 240 to 720 minutes of etching time for the selected concentration of the chemical etchant.