Area-selective atomic layer deposition (AS-ALD) is a bottom-up process that selectively deposits thin films onto specific areas of a wafer surface. The surface reactions of AS-ALD are controlled by blocking the adsorption of precursors using inhibitors such as self-assembled monolayers (SAMs) or small molecule inhibitors. To increase selectivity during the AS-ALD process, the design of both the inhibitor and the precursor is crucial. Both inhibitors and precursors vary in reactivity and size, and surface reactions are blocked through interactions between precursor molecules and surface functional groups. However, challenges in the conventional SAM-based AS-ALD method include thermal instability and potential damage to substrates during the removal of residual SAMs after the process. To address these issues, recent studies have proposed alternative inhibitors and process design strategies.