Sn doped In2O3 (ITO) and ITO/Cu/ITO (ICI) multilayer films were prepared on glass substrates with a reactive radiofrequency (RF) magnetron sputter without intentional substrate heating, and then the influence of the Cu interlayer on themethanol gas sensitivity of the ICI films were considered. Although both ITO and ICI film sensors had the same thicknessof 100nm, the ICI sensors had a sandwich structure of ITO 50nm/Cu 5nm/ITO 45nm. The ICI films showed a ten timeshigher carrier density than that of the pure ITO films. However, the Cu interlayer may also have caused the decrement of carriermobility because the interfaces between the ITO and Cu interlayer acted as a barrier to carrier movement. Although the ICIfilms had two times a lower mobility than that of the pure ITO films, the ICI films had a higher conductivity of 3.6·10-4Ωcmdue to a higher carrier density. The changes in the sensitivity of the film sensors caused by methanol gas ranging from 50 to500ppm were measured at room temperature. The ICI sensors showed a higher gas sensitivity than that of the ITO single layersensors. Finally, it can be concluded that the ICI film sensors have the potential to be used as improved methanol gas sensors.

Chromium nitride (CrN) films were deposited on silicon substrate by RF magnetron sputtering assisted by inductive coupled nitrogen plasma without intentional substrate heating. Films were deposited with different levels of bombarding energy by nitrogen ions (N+) to investigate the influence of substrate bias voltage (Vb) on the growth of CrN thin films. XRD spectra showed that the crystallographic structure of CrN films was strongly affected by substrate bias voltage. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results showed that surface roughness and grain size of the CrN films varied significantly with bias voltage. For - 80 Vb depositions, the CrN films showed bigger grain sizes than those of other bias voltage conditions. The lowest surface roughness of 0.15 nm was obtained from the CrN films deposited at .130 Vb.