Numerous research institutes have been studying semiconductor devices using two-dimensional materials for several years. However, the findings of these studies have yet to demonstrate the performance of digital devices that could replace silicon devices in the semiconductor industry. Nonetheless, the high carrier mobility and saturation velocity of 2-D materials remain attractive for semiconductor device performance, particularly in analog devices where these features can be utilized. In this research, we fabricated a phase-shift controller, a typical component of analog circuits, using 2-D materials and verified its operational characteristics. Analog circuits do not require large area integration, so we employed graphene, which has relatively simple formation and processing, as the 2-D material. Devices using graphene as a channel exhibit a V-shaped I–V characteristic, allowing for the input voltage to be adjusted to produce various modes of output characteristics. This means that the same devices can generate a phase-shifted output and an output with double the frequency by simply adjusting the input voltage range. This research is particularly meaningful since it demonstrates not only the potential of 2-D materials but also their potential for direct application to the semiconductor industry. These findings will contribute to the development of system IC technology and various applications.

The high quality contact between graphene and the metal electrode is a crucial factor in achieving the high performance of graphene transistors. However, there is not sufficient research about contact resistance reduction methods to improve the junction of metal-graphene. In this paper, we propose a new method to decrease the contact resistance between graphene and metal using directly grown graphene over a metal surface. The study found that the grown graphene over copper, as an intermediate layer between the copper and the transferred graphene, reduces contact resistance, and that the adhesion strength between graphene and metal becomes stronger. The results confirmed the contact resistance of the metal-graphene of the proposed structure is nearly half that of the conventional contact structure.