This paper developed a wind triboelectric nanogenerator(TENG) using cubic PTFE model. When the wind is injected, the cube PTFE is scattered inside the cylinder TENG structure and energy is harvested. The TENG structure was designed as a cylinder that allows independent dielectric to rotate well inside. In addition, an inlet and an outlet were made to allow good wind flow. Unlike wind harvesters, where one end is mostly fixed and energy is harvested, the dielectric's motion is freed using independent mode. The electrodes and dielectric materials used Aluminum(Al) and Polytetrafluoroethylene(PTFE). The cube PTFE dielectric contacts/separates the electrode attached to the inner wall of the cylinder along the inner wall of the cylinder. At this time, electricity is generated by the kinetic energy generated by the wind. In this study, the efficiency by the number of Cube PTFE inside the cylinder was compared. The experiment confirmed that as the number of Cube PTFE increases, the power increases, but if the number of Cube PTFE exceeds an appropriate number, the density inside the cylinder increases, interrupting the flow of wind, and thus decreasing the power.

A sintering process for copper based films using a rapid thermal process with infrared lamps is proposed to improve the electrical properties. Compared with films produced by conventional thermal sintering, the microstructure of the copper based films contained fewer internal and interfacial pores and larger grains after the rapid thermal process. This high-density microstructure is due to the high heating rate, which causes the abrupt decomposition of the organic shell at higher temperatures than is the case for the low heating rate; the high heating rate also induces densification of the copper based films. In order to confirm the effect of the rapid thermal process on copper nanoink, copper based films were prepared under varying of conditions such as the sintering temperature, time, and heating rate. As a result, the resistivity of the copper based films showed no significant changes at high temperature (300 oC) according to the sintering conditions. On the other hand, at low temperatures, the resistivity of the copper based films depended on the heating rate of the rapid thermal process.