This study investigates the microstructure and thermal shock properties of polycrystalline diamond compact (PDC) produced by the high-temperature, high-pressure (HPHT) process. The diamond used for the investigation features a 12~22 μm- and 8~16 μm-sized main particles, and 1~2 μm-sized filler particles. The filler particle ratio is adjusted up to 5~31% to produce a mixed particle, and then the tap density is measured. The measurement finds that as the filler particle ratio increases, the tap density value continuously increases, but at 23% or greater, it reduces by a small margin. The mixed particle described above undergoes an HPHT sintering process. Observation of PDC microstructures reveals that the filler particle ratio with high tap density value increases direct bonding among diamond particles, Co distribution becomes even, and the Co and W fraction also decreases. The produced PDC undergoes thermal shock tests with two temperature conditions of 820 and 830, and the results reveals that PDC with smaller filler particle ratio and low tap density value easily produces cracks, while PDC with high tap density value that contributes in increased direct bonding along with the higher diamond content results in improved thermal shock properties.

Diamond/SiC composites are appropriate candidate materials for heat conduction as well as high temperature abrasive materials because they do not form liquid phase at high temperature. Diamond/SiC composite consists of diamond particles embedded in a SiC binding matrix. SiC is a hard material with strong covalent bonds having similar structure and thermal expansion with diamond. Interfacial reaction plays an important role in diamond/SiC composites. Diamond/SiC composites were fabricated by high temperature and high pressure (HPHT) sintering with different diamond content, single diamond particle size and bi-modal diamond particle size, and also the effects of composition of diamond and silicon on microstructure, mechanical properties and thermal properties of diamond/SiC composite were investigated. The critical factors influencing the dynamics of reaction between diamond and silicon, such as graphitization process and phase composition, were characterized. Key factor to enhance mechanical and thermal properties of diamond/SiC composites is to keep strong interfacial bonding at diamond/SiC composites and homogeneous dispersion of diamond particles in SiC matrix.

인은 다이아몬드 내에 함유될 수 있는 흥미로운 불순물 중의 하나로서 n 타입의 반도체가 될 수 있다는 점에서 흥미롭다. 그러므로 전기적 특성 및 광학적 특성이 많이 연구되고 있지만, 대부분이 CVD (화학 기상합성) 다이아몬드에 관한 것이다. 본 연구에서는 인을 첨가한 HPHT (고압과 고온) 다이아몬드를 합성하고 인이 어떻게 함유되는가 알아보기 위하여 CL 분광기로 광학적 특성을 살펴보았다. 그 결과, 기존에 발견된 발광피크(239 nm, 240～270 nm)뿐만 아니라 248, 603 nm에서 새로운 발광피크가 발견되었다. 이러한 발광피크들은 인과 같이 혼입된 질소나 붕소와 같은 불순물이 공존하여 발생한 복합 결함에 의한 것이라고 판단된다.